Analysis for the angle dependence of GaAs based RCE photodetectors


Autoria(s): Liang K; Yang XH; Du Y; Wu RH
Data(s)

2002

Resumo

The theoretical analysis and experimental measurement on the angle dependence of quantum efficiency of GaAs based resonant cavity enhanced (RCE) photodetector is presented. By changing the angle of incoming light, about 40mn wavelength variation of peak quantum efficiency has been experimentally obtained. The peak quantum efficiency and optical bandwidth at different mode corresponding to different angle incidence have been characterized with different absorption dependence on wavelength. The convenient angle tuning of resonant mode will be helpful to relax the strict constraint of RCE photodetector to light source with narrow emission spectrum while especially applied in space optical detections and communications.

The theoretical analysis and experimental measurement on the angle dependence of quantum efficiency of GaAs based resonant cavity enhanced (RCE) photodetector is presented. By changing the angle of incoming light, about 40mn wavelength variation of peak quantum efficiency has been experimentally obtained. The peak quantum efficiency and optical bandwidth at different mode corresponding to different angle incidence have been characterized with different absorption dependence on wavelength. The convenient angle tuning of resonant mode will be helpful to relax the strict constraint of RCE photodetector to light source with narrow emission spectrum while especially applied in space optical detections and communications.

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Chinese Opt Soc.; SPIE.; China Inst Commun.; Nortel Networks Ltd.; Santec Corp.; Walden Int.; JDS Uniphase Corp.; Agere Syst.; ZTE Corp.; Lovells.; Australia Opt Soc.; IEEE Commun Soc.; Korea Assoc Photon Ind Dev.; Optoelectr Ind Dev Assoc.; Optoelectr Ind & Technol Dev Assoc.; Opt Soc India.; Opt Soc Japan.; Opt Soc Korea.; Photon Ind Dev Assoc.; SPIE Asia Pacific Chapters.; SPIE, Tech Grp Opt Networks.; Telecom World.

Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

Chinese Opt Soc.; SPIE.; China Inst Commun.; Nortel Networks Ltd.; Santec Corp.; Walden Int.; JDS Uniphase Corp.; Agere Syst.; ZTE Corp.; Lovells.; Australia Opt Soc.; IEEE Commun Soc.; Korea Assoc Photon Ind Dev.; Optoelectr Ind Dev Assoc.; Optoelectr Ind & Technol Dev Assoc.; Opt Soc India.; Opt Soc Japan.; Opt Soc Korea.; Photon Ind Dev Assoc.; SPIE Asia Pacific Chapters.; SPIE, Tech Grp Opt Networks.; Telecom World.

Identificador

http://ir.semi.ac.cn/handle/172111/13695

http://www.irgrid.ac.cn/handle/1471x/105029

Idioma(s)

英语

Publicador

SPIE-INT SOC OPTICAL ENGINEERING

1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA

Fonte

Liang K; Yang XH; Du Y; Wu RH .Analysis for the angle dependence of GaAs based RCE photodetectors .见:SPIE-INT SOC OPTICAL ENGINEERING .APOC 2002: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS AND DEVICES FOR OPTICAL AND WIRELESS COMMUNICATIONS, 4905,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2002,539-544

Palavras-Chave #光电子学 #GalnNAs #resonant cavity enhanced photodetectors #angle-selected tuning
Tipo

会议论文