Effect of rapid thermal annealing on Ti-AlN interfaces

The interface diffusion, reaction, and adherence of rapid thermal annealed Ti/ALN were investigated by RES, AES, SIMS, XRD and a scratch test. The experimental results show that diffusion and reaction occurs at the interface of Ti/AlN when the sample is rapidly annealed. During annealing, both the O adsorbed on the surface and doped in the AlN substrate diffuse into the Ti film. At low temperature TiO2 is produced. At higher temperature O reacts with the diffused Al in the Ti film and produces an Al2O3 layer in the middle of the film. N diffuses into the Ti film and produces TiN with an interface reaction. Ti oxide is produced at the interface between the film and the substrate. Scratch test results show that interface adherence is distinctly improved by rapid annealing at low temperature and decreases at higher temperature. (C) 1999 Elsevier Science B.V. All rights reserved.

Si-based optoelectronic devices and their attractive applications

The semiconductor photonics and optoelectronics which have a great significance in the development of advanced high technology of information systems will be discussed in this paper. The emphasis will be put on the recent research carried out in our laboratory in enhanced luminescence from low dimensional materials such as SiGe/Si and Er-doped Si-rich SiO2/Si and Er-doped SixNy/Si. A ring shape waveguide structure, used to promote the effective absorption coefficient in PIN photodetector for 1.3 mu m wavelength and a resonant cavity enhanced structure, used to improve the quantum efficiency and response in heterostructure photo-transistor (HPT), are also proposed in this paper.

Native-oxidized InAlAs blocking layer buried heterostructure InGaAsP-InP MQW laser for high-temperature operation

A novel idea of InAlAs native oxide utilized to replace the p-n-p-n thyristor blocking layer and improve the high-temperature performance of buried heterostructure InGaAsP-InP laser is first proposed and demonstrated. A characteristic temperature (T-0) of 50 K is achieved from an InA1As native oxide buried heterostructure (NOBH) InGaAsP-InP multiquantum-well laser with 1.5-mu m-wide diode leakage passage path. The threshold current and slope efficiency of NOBH laser changes from 5.6 mA, 0.23 mW/mA to 28 mA, 0.11 mW/mA with the operating temperature changing from 20 degrees C to 100 degrees C. It is comparable to conventional p-n reverse biased junction BH laser with minimized diode leakage current, and is much better than the buried ridge strip with proton implanted laterally confinement laser.

信息光子学物理

光子学(photonics)是研究光子作为信息和能量载体的科学，光子学与信息科学的交叉形成信息光子学(information photonics)，它既是传统波动光学的提高和发展，又是近代光学和微电子学的综合和升华。本书内容涉及信息光子学中经典、近代和前沿的大部分重要分支学科，系统地论述光子(光波)的激发和产生，光波在各向异性介质、光波导和光纤中的传播，光波的振幅、相位调制和空间光调制，光的滤波、开关、放大、探测，光纤中的色散及其补偿，光纤中的非线性效应，以及近年来引起科学技术界广泛注意的前沿课题——光子晶体光纤。作为信息光子学的重要应用领域，本书又系统介绍了光信息显示(投影显示)和光通信的主要课题。 本书既全面讲述物理原理，又兼顾前沿应用，可作为高校光电信息、光电子、光学工程、应用物理等专业研究生和大学本科高年级学生的教材，也可供光电信息领域(应当正确地称为信息光子学领域)从事研发、生产和经营的科技和业务人员参考。

The whispering gallery mode in photonic crystal ring cavity - art. no. 698438

Whispering gallery modes (WGMs) in microcavities possess ultra-high cavity Q factor. Such microcavity are easy to be fabricated, so WGMs have attracted much attention in the area of photonics and integrated photonic circuits. It is well known that the effect of total internal reflection restricts the size of this mirocavity. Such drawback goes against the integration of photon. However, the photonic crystal microcavities (PCMC) make a breakthrough recently. The WGMs in the PCMC are possible to gain both ultra-high Q and ultra-small mode volume. In this paper, the property of the mode in photonic crystal ring cavity is analyzed by FDTD and PWE. By modifying the airholes in the corners of the ring cavity, we can obtain the WGM. Also the Q factor of WGM in photonic crystal ring cavity is calculated. This favors the design of the photonic crystal microcavity components.

Advances in high power semiconductor diode lasers - art. no. 682402

High power semiconductor lasers have broad applications in the fields of military and industry. Recent advances in high power semiconductor lasers are reviewed mainly in two aspects: improvements of diode lasers performance and optimization of packaging architectures of diode laser bars. Factors which determine the performance of diode lasers, such as power conversion efficiency, temperature of operation, reliability, wavelength stabilization etc., result from a combination of new semiconductor materials, new diode structures, careful material processing of bars. the latest progress of today's high-power diode lasers at home and abroad is briefly discussed and typical data are presented. The packaging process is of decisive importance for the applicability of high-power diode laser bars, not only technically but also economically. The packaging techniques include the material choosing and the structure optimizing of heat-sinks, the bonding between the array and the heat-sink, the cooling and the fiber coupling, etc. The status of packaging techniques is stressed. There are basically three different diode package architectural options according to the integration grade. Since the package design is dominated by the cooling aspect,. different effective cooling techniques are promoted by different package architectures and specific demands. The benefit and utility of each package are strongly dependent upon the fundamental optoelectronic properties of the individual diode laser bars. Factors which influence these properties are outlined and comparisons of packaging approaches for these materials are made. Modularity of package for special application requirements is an important developing tendency for high power diode lasers.

Fabrication and characterization of TO packaged high-speed laser modules - art. no. 682407

Various high-speed laser modules are fabricated by TO-Packaged processes, such as FP laser modules, DFB laser modules, and VCSEL modules. Furthermore,, the resonance among the circuit elements provides an approach to compensating the TO packaging parasitics, and improving the frequency response of the devices. The detailed equivalent circuit model is established to investigate both the laser diode and packaging comprehensively. The small-signal modulation bandwidths of the TO packaged FP laser, DFB laser and the VCSEL modules are more than 10, 9.7 and 8 GHz, respectively.

Design considerations for a silicon-based p-i-n phase modulator in a double ridge waveguide with side isolating grooves

We present detail design considerations and simulation results of a forward biased carrier injection p-i-n modulator integrated on SOI rib waveguides. To minimize the free carrier absorption loss while keeping the comparatively small lateral dimensions of the modulator as required for high speed operation, we proposed two structural improvements, namely the double ridge (terrace ridge) structure and the isolating grooves at both sides of the double ridge. With improved carrier injection and optical confinement structure, the simulated modulator response time is in sub-ns range and absorption loss is minimized.

SOI submicron rib waveguides: Design, Fabrication and Characterization

We present detailed design, fabrication, and characterization issues of submicron rib waveguides based on silicon-on-insulator. The waveguides fabricated by EBL and ICP processes have propagation loss of 1.8dB/mm and bend loss of 0.14dB/90 degrees for bends with radius of 5 mu m.

Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer

A Ge layer with a pitting surface can be obtained when the growth temperature is lowered to 290 degrees C. On the low temperature Ge buffer layer with pits, high quality Ge layer was grown at 600 degrees C with a threading dislocation density of similar to 1x10(5)cm(-2). According to channeling and random Rutherford backscattering spectrometry spectra, a chi(min) value of 10% and 3.9% was found, respectively, at the Ge/Si interface and immediately under the surface peak. The root-mean-square surface roughness of Ge film was 0.33nm.

Characteristics of SOI rib waveguide microring and racetrack resonators

Characteristics of microring/racetrack resonators, in submicron SOI rib waveguides, have been investigated. The effects of waveguide dimensions, coupler design, roughness, and oxide cladding are considered. Moreover, guided mode, loss and dispersion of such waveguides are analyzed.

Fabrication method of silicon nanostructures by anisotropic etching

A fabrication method of silicon nanostructures is presented. Silicon nanowire, shift-line structure and islands have been successfully fabricated on SOI wafer using e-beam lithography and anisotropic etching technique.

Theoretical and Experimental Studies of an Ultra-compact Photonic Crystal Corner Mirror Based on Silicon-On-Insulator

An ultra-compact silicon-on-insulator based photonic crystal corner mirror is designed and optimized. A sample is then successfully fabricated with extra losses 1.1 +/- 0.4dB for transverse-electronic (M) polarization for wavelength range of 1510-1630nm.

Fabrication and characterization of two-dimensional photonic crystal on silicon by efficient methods

Two-dimensional photonic crystals working in near infrared region are fabricated into silicon-on-insulator wafer by 248-nm deep UV lithography. We present an efficient way to measure the photonic crystal waveguide's light transmission spectra at given polarization states.

An integrated optical receiver in MS/RF CMOS process

A monolithically integrated optoelectronic receiver was realized utilizing a deep sub-micron MS/RF CMOS process. Novel photo-diode with STI and highspeed receiver circuit were designed. This OEIC takes advantage of several new features to improve the performance.