SOI submicron rib waveguides: Design, Fabrication and Characterization


Autoria(s): Xu XJ; Chen SW; Li ZY; Yu YD; Yu JZ
Data(s)

2008

Resumo

We present detailed design, fabrication, and characterization issues of submicron rib waveguides based on silicon-on-insulator. The waveguides fabricated by EBL and ICP processes have propagation loss of 1.8dB/mm and bend loss of 0.14dB/90 degrees for bends with radius of 5 mu m.

We present detailed design, fabrication, and characterization issues of submicron rib waveguides based on silicon-on-insulator. The waveguides fabricated by EBL and ICP processes have propagation loss of 1.8dB/mm and bend loss of 0.14dB/90 degrees for bends with radius of 5 mu m.

zhangdi于2010-03-09批量导入

zhangdi于2010-03-09批量导入

IEEE.; Informat Soc Technol.; Helios.

[Xu, Xuejun; Chen, Shaowu; Li, Zhiyong; Yu, Yude; Yu, Jinzhong] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

IEEE.; Informat Soc Technol.; Helios.

Identificador

http://ir.semi.ac.cn/handle/172111/8340

http://www.irgrid.ac.cn/handle/1471x/65869

Idioma(s)

英语

Publicador

IEEE

345 E 47TH ST, NEW YORK, NY 10017 USA

Fonte

Xu, XJ;Chen, SW;Li, ZY;Yu, YD;Yu, JZ.SOI submicron rib waveguides: Design, Fabrication and Characterization .见:IEEE .2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS,345 E 47TH ST, NEW YORK, NY 10017 USA ,2008,: 137-139

Palavras-Chave #光电子学
Tipo

会议论文