SOI submicron rib waveguides: Design, Fabrication and Characterization
Data(s) |
2008
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Resumo |
We present detailed design, fabrication, and characterization issues of submicron rib waveguides based on silicon-on-insulator. The waveguides fabricated by EBL and ICP processes have propagation loss of 1.8dB/mm and bend loss of 0.14dB/90 degrees for bends with radius of 5 mu m. We present detailed design, fabrication, and characterization issues of submicron rib waveguides based on silicon-on-insulator. The waveguides fabricated by EBL and ICP processes have propagation loss of 1.8dB/mm and bend loss of 0.14dB/90 degrees for bends with radius of 5 mu m. zhangdi于2010-03-09批量导入 zhangdi于2010-03-09批量导入 IEEE.; Informat Soc Technol.; Helios. [Xu, Xuejun; Chen, Shaowu; Li, Zhiyong; Yu, Yude; Yu, Jinzhong] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China IEEE.; Informat Soc Technol.; Helios. |
Identificador | |
Idioma(s) |
英语 |
Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
Fonte |
Xu, XJ;Chen, SW;Li, ZY;Yu, YD;Yu, JZ.SOI submicron rib waveguides: Design, Fabrication and Characterization .见:IEEE .2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS,345 E 47TH ST, NEW YORK, NY 10017 USA ,2008,: 137-139 |
Palavras-Chave | #光电子学 |
Tipo |
会议论文 |