Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors

Self-assembled InAs QD dot-in-a-well (DWELL) structures were grown on GaAs substrate by MBE system, and heterojunction modulation-doped field effect transistor (MODFET) was fabricated. The optical properties of the samples show that the photoluminescence of InAs/GaAs self-assembled quantum dot (SAQD) is at 1.265 mu m at 300 K. The temperature-dependence of the abnormal redshift of InAs SAQD wavelength with the increasing temperature was observed, which is closely related with the inhomogeneous size distribution of the InAs quantum dot. According to the electrical measurement, high electric field current-voltage characteristic of the MODFET device were obtained. The embedded InAs QD of the samples can be regard as scattering centers to the vicinity of the channel electrons. The transport property of the electrons in GaAs channel will be modulated by the QD due to the Coulomb interaction. It has been proposed that a MODFET embedded with InAs QDs presents a novel type of field effect photon detector.

High-speed photodetector characterization using tunable laser by optical heterodyne technique - art. no. 60200A

An ultra-wide-band frequency response measurement system for optoelectronic devices has been established using the optical heterodyne method utilizing a tunable laser and a wavelenath-fixed distributed feedback laser. By controlling the laser diode cavity length, the beat frequency is swept from DC to hundreds GHz. An outstanding advantage is that this measurement system does not need any high-speed light modulation source and additional calibration. In this measurement, two types of different O/E receivers have been tested. and 3 dB bandwidths measured by this system were 14.4GHz and 40GHz, respectively. The comparisons between experimental data and that from manufacturer show that this method is accurate and easy to carry out.

Effects of Hydrogen Plasma Treatment on the Electrical and Optical Properties of ZnO Films: Identification of Hydrogen Donors in ZnO

Wurtzite ZnO has many potential applications in optoelectronic devices, and the hydrogenated ZnO exhibits excellent photoelectronic properties compared to undoped ZnO; however, the structure of H-related defects is still unclear. In this article, the effects of hydrogen-plasma treatment and subsequent annealing on the electrical and optical properties of ZnO films were investigated by a combination of Hall measurement, Raman scattering, and photoluminescence. It is found that two types of hydrogen-related defects, namely, the interstitial hydrogen located at the bond-centered (H-BC) and the hydrogen trapped at a O vacancy (H-O), are responsible for the n-type background conductivity of ZnO films. Besides introducing two hydrogen-related donor states, the incorporated hydrogen passivates defects at grain boundaries. With increasing annealing temperatures, the unstable H-BC atoms gradually diffuse out of the ZnO films and part of them are converted into H-O, which gives rise to two anomalous Raman peaks at 275 and 510 cm(-1). These results help to clarify the relationship between the hydrogen-related defects in ZnO described in various studies and the free carriers that are produced by the introduction of hydrogen.

Pulse-front matched ultra-broadband optical parametric chirped pulse amplifier for sub-12 fs pulse generation

We propose a LBO-based ultra-broadband chirped pulse optical parametric amplifier employing pulse-front-matching to yield transform-limited sub-12-fs pulses. Measurement of the maximum possible gain bandwidth for the LBO-based OPCPA demonstrates more than 60nm gain bandwidth FWHM. For the generation of TL pulses by the use of this OPCPA, a suitable combination of OPCPA and PFM is first presented. The PFM pump geometry realizes tilt-free signal amplification, and permits this OPCPA to generate TL sub-12-fs pulses.

MEASUREMENT AND SIMULATION OF THE TURN-ON DELAY TIME JITTER IN GAIN-SWITCHED SEMICONDUCTOR-LASERS

The turn-on delay time jitter of four different unbiased gain-switched laser types is determined by measuring the temporal probability distribution of the leading edge of the emitted optical pulse. One single-mode 1.5-mu-m distributed feed-back laser and three multimode Fabry-Perot lasers emitting at 750 nm and 1.3-mu-m are investigated. The jitter is found to decrease for all lasers with increasing injection current. For multimode lasers it decreases from 8 ps excited slightly above threshold down to below 2 ps at three times the threshold current. The jitter of the distributed feedback (DFB) laser is a factor of 3-5 larger than the jitter of the three multimode lasers. A new model to predict the turn-on delay time jitter is presented and explains the experiments quantitatively.

DEVELOPMENT OF CURRENT-BASED MICROSCOPIC DEFECT ANALYSIS-METHODS AND ASSOCIATED OPTICAL FILLING TECHNIQUES FOR THE INVESTIGATION ON HIGHLY IRRADIATED HIGH-RESISTIVITY SILICON DETECTORS

Current based microscopic defect analysis methods such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) have been further developed in accordance with the need for the defect analysis of highly irradiated (Phi(n) > 10(13) n/cm(2)) high resistivity silicon detectors. The new I-DLTS/TSC system has a temperature range of 8 K less than or equal to T less than or equal to 450 K and a high sensitivity that can detect a defect concentration of less than 10(10)/cm(3) (background noise as low as 10 fA). A new filling method using different wavelength laser illumination has been applied, which is more efficient and suitable than the traditional voltage pulse filling. It has been found that the filling of a defect level depends on such factors as the total concentration of free carriers generated or injected, the penetration length of the laser (laser wavelength), the temperature at which the filling is taking place, as well as the decay time after the filling (but before the measurement). The mechanism of the defect filling can be explained by the competition between trapping and detrapping of defect levels, possible capture cross section temperature dependence, and interaction among various defect levels in terms of charge transferring. Optimum defect filling conditions have been suggested for highly irradiated high resistivity silicon detectors.

Fabrication of semiconductor optical amplifiers and a novel gain measuring technique

The design and fabrication of 1550 nm semiconductor optical amplifiers (SOAs) and the characteristics of the fabricated SOA are reported. A novel gain measurement technique based on the integrations of the product of emission spectrum and a phase function over one mode interval is proposed for Fabry-Perot semiconductor lasers.

Tolerance analysis for incident angle of volume phase holographic grating used in optical channel performance monitor

Transmission Volume Phase Holographic Grating (VPHG) is adopted as spectral element in the real-time Optical Channel Performance Monitor (OCPM), which is in dire need in the Dense Wavelength -division-multiplexing(DATDM) system. And the tolerance of incident angle, which can be fully determined by two angles: 6 and (p, is finally inferred in this paper. Commonly, the default setting is that the incident plane is perpendicular to the fringes when the incident angle is mentioned. Now the situation out of the vertical is discussed. By combining the theoretic analysis of VPHG with its use in OCPM and changing 6 and (0 precisely in the computation and experiment, the two physical quantities which can fully specify the performance of VPHG the diffraction efficiency and the resolution, are analyzed. The results show that the diffraction efficiency varies greatly with the change of 6 or (p. But from the view of the whole C-band, only the peak diffraction efficiency drifts to another wavelength. As for the resolution, it deteriorates more rapidly than diffraction efficiency with the change of (p, while more slowly with the change of theta. Only if \phi\less than or equal to+/-1degrees and alpha(B) -0.5 less than or equal to theta less than or equal to alpha(B) + 0.5, the performance of the VPHG would be good enough to be used in OCPM system.

Fabrication of 1.3 mu m Si-based MEMS tunable optical filter

In this paper we report the fabrication of 1.3 mum Si-based MEMS tunable optical filter, by surface micromaching. Through wet etching of polyimide sacrificial layer, a tunable Fabry-Perot filter was successfully fabricated. We make the capacitance measurement of the prototype device, compare the experimental curve with the theoretical one, and explain the difference between them.

Real-time far distance micro-vibration measurement using an external cavity semiconductor laser interferometer with a feedback control system

An external cavity semiconductor laser interferometer used to measure far distance micro-vibration in real time is proposed. In the interferometer, a single longitudinal mode and excellent coherent characteristic grating external cavity semiconductor laser is constructed and acted as a light source and a phase compensator. Its coherent length exceeds 200 meters. The angle between normal and incidence beam of the far object is allowed to change in definite range during the measurement with this interferometer, and this makes the far distance interference measurement easier and more convenient. Also, it is not required to keep the amplitudes of the first and second harmonic components equal, and then the dynamic range is increased. A feedback control system is used to compensate the phase disturbance between the two interference beams introduced by environmental vibration.

Improved digital processing method used for image motion measurement based on hybrid opto-digital joint transform correlator

Hybrid opto-digital joint transform correlator (HODJTC) is effective for image motion measurement, but it is different from the traditional joint transform correlator because it only has one optical transform and the joint power spectrum is directly input into a digital processing unit to compute the image shift. The local cross-correlation image can be directly obtained by adopting a local Fourier transform operator. After the pixel-level location of cross-correlation peak is initially obtained, the up-sampling technique is introduced to relocate the peak in even higher accuracy. With signal-to-noise ratio >= 20 dB, up-sampling factor k >= 10 and the maximum image shift <= 60 pixels, the root-mean-square error of motion measurement accuracy can be controlled below 0.05 pixels.

Structural and optical properties of distyrylbenzene derivative thin films

In order to understand the relationship between the molecular orientation and optical properties of oligophenylenevinylene film, oriented thin films of 1,4-di(p-methoxystyryl)benzene (DSB-1) and 1,4-di(p-methoxystyryl)-2,5-dimethoxybenzene (DSB-2) were fabricated on a potassium bromide (KBr) (001) surface by the vacuum-evaporation method. The structures and optical properties of DSB films have been investigated by transmission electron microscopy (TEM), atomic force microscopy (AFM) and polarized photoluminescence (PL) spectroscopy, respectively. DSB-1 molecules orient obliquely and/or parallel to the substrate surface depending on the substrate temperature. On the other hand, DSB-2 molecules tend to grow epitaxially with the molecular plane parallel to the substrate surface. The anisotropic molecular orientations represent the polarized PL. The epitaxial growth and molecular orientations observed by TEM and AFM at the local and microscopic scale are confirmed by polarized PL measurement on a macroscopic scale. (C) 1999 American Institute of Physics. [S0021-8979(99)01523-6].

INVESTIGATION OF ELECTRIC DICHROISM OF CETYLPYRIDINIUM BROMIDE BY SPECTROELECTROCHEMISTRY WITH A LONG OPTICAL-PATH LENGTH THIN-LAYER CELL

In this paper, the electric dichroism of cetylpyridinium bromide (CPB) has been found and studied by spectroelectrochemistry with a long optical path length thin-layer cell (LOPTLC) for the first time. The CPB molecule with a long carbon chain and a polar pyridinium ring is anisotropic in molecular configuration or in polarizability. In the electric field of a thin-layer cell, the CPB molecule reorientates along the direction of the electric field and exhibits electric dichroism, which results in the increase of absorbance of CPB in the UV-vis range. By use of in situ measurement of spectroelectrochemistry, the order parameters of long molecular axis (S = 0.845) and short molecular axis (D = 0.155) and the angle between the long axis direction of the CPB molecule and the direction normal to the electrode surface (theta = 18-degrees 44') have been determined. These data were used to describe the state of arrangement of the molecules in the solution. The reorientation of CPB molecules is the result of the interaction between the anisotropic molecules and electric field. The effects of the concentration of CPB and of the applied electric field on the electric dichroism have been investigated.