Effects of Hydrogen Plasma Treatment on the Electrical and Optical Properties of ZnO Films: Identification of Hydrogen Donors in ZnO

Wurtzite ZnO has many potential applications in optoelectronic devices, and the hydrogenated ZnO exhibits excellent photoelectronic properties compared to undoped ZnO; however, the structure of H-related defects is still unclear. In this article, the effects of hydrogen-plasma treatment and subsequent annealing on the electrical and optical properties of ZnO films were investigated by a combination of Hall measurement, Raman scattering, and photoluminescence. It is found that two types of hydrogen-related defects, namely, the interstitial hydrogen located at the bond-centered (H-BC) and the hydrogen trapped at a O vacancy (H-O), are responsible for the n-type background conductivity of ZnO films. Besides introducing two hydrogen-related donor states, the incorporated hydrogen passivates defects at grain boundaries. With increasing annealing temperatures, the unstable H-BC atoms gradually diffuse out of the ZnO films and part of them are converted into H-O, which gives rise to two anomalous Raman peaks at 275 and 510 cm(-1). These results help to clarify the relationship between the hydrogen-related defects in ZnO described in various studies and the free carriers that are produced by the introduction of hydrogen.

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This work was financially supported by the "863" project of China (Grant 2009AA03Z305), the National Natural Science Foundation of China (Grant 60876031, 60806044), the National Basic Research Program of China (Grant 2010CB933800), and Hong Kong Research Grants Council (RGC) General Research Funds (GRF) CityU 112608.

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This work was financially supported by the "863" project of China (Grant 2009AA03Z305), the National Natural Science Foundation of China (Grant 60876031, 60806044), the National Basic Research Program of China (Grant 2010CB933800), and Hong Kong Research Grants Council (RGC) General Research Funds (GRF) CityU 112608.