MOCVD growth of cubic GaN: Materials and devices

Many impressive progresses have been made recently on the growth of cubic-phase GaN by MBE and MOCVD. In this paper, some of our recent progress will be reviewed, including the growth of high quality cubic InGaN films, InGaN/GaN heterostructure blue and green LEDs. Cubic-phase GaN films were grown on GaAs (100) substrates by MOCVD. Growth conditions were optimized to obtain pure cubic phase GaN films up to a thickness of 4 mum. An anomalous compressive strain was found in the as-grown GaN films in spite of a smaller lattice constant for GaN compared with that of GaAs substrates. The photoluminescence FWHM of high quality InGaN epilayers was less than 100 meV The InGaN/GaN heterostructure blue LED has intense electroluminescence with a FWHM of 20 nm.

Preparation and characterization of erbium doped sol-gel silica glasses

Erbium-doped silica glasses were made by sol-gel process. Intensive photoluminescence (PL) spectra from the Er-doped silica glasses at room temperature were measured. A broadband peak at 1535 ma, corresponding to the I-4(13/2)-I-4(15/2) transition, its full width at half-maximum (FWHM) of 10 nm, and a shoulder at 1546 nm in the PL spectra were observed. At lower temperatures, main line of 1535 nm and another line of 1552 Mn instead of 1546 nm appear. So two types of luminescence centers must exist in the samples at different temperature. The intensity of main line does not decrease obviously with increasing temperature. By varying the Er ion concentration in the range of 0.2 wt% - 5wt%, the highest photoluminescence intensity was obtained at 0.2wt% erbium doped concentration. Luminescence intensity decreases with increasing erbium concentration. Cooperative upconversion was used to explain the concentration quenching of luminescence from silica glass with high erbium concentration. Extended X-ray absorption fine structure measurements were carried out. It was found that the majority of the erbium impurities in the glasses have a local structure of eight first neighbor oxygen atoms at a mean distance of 0.255 nm, which is consistent with the typical coordination structure of rare earth ion.

Photovoltage and luminescence study of stacked InAs/GaAs self-organized quantum dots

The ground and excited state excitonic transitions of stacked InAs self-organized quantum dots (QDs) in a laser diode structure are studied. The interband absorption transitions of QDs are investigated by non-destructive PV spectra, indicating that the strongest absorption is related to the excited states with a high density and coincides with the photon energy of lasing emission. The temperature and excitation (electric injection) intensity dependences of photoluminescence and electroluminescence indicate the influence of state filling effect on the luminescence of threefold stacked QDs. The results indicate that different coupling channels exist between electronic states in both vertical and lateral directions.

Mechanism on exciton-mediated energy transfer in erbium-doped silicon

Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is related to optically active Er concentration, lifetime of excited Er3+ ion and spontaneous emission. The thermal quenching of the Er luminescence in Si is caused by thermal ionization of Er-bound exciton complex and nonradiative energy back-transfer processes, which correspond to the activation energy of 6.6 and 47.4 meV, respectively. Er doping in silicon introduces donor states, a large enhancement in the electrical activation of Er (up to two orders of magnitude) is obtained by co-implanting Er with O. It appears that the donor states are the gateway to the optically active Er. (C) 2000 Elsevier Science B.V. All rights reserved.

Studying the Attribution of LiF in OLED by the C-V Characteristics

The organic light-emitting device (OLED) with simple structures of indium tin oxide (ITO)/tris(8-quinolinolato) aluminum (Alq(3))/LiF/Al and ITO/Alq(3)/Al was fabricated to analyze the contribution of LiF in OLED. We used the C-V characteristics to investigate the contribution of LiF in OLED and found that the capacitance of the above-mentioned structures was 12.5 nF and 77.5 nF, respectively. It is shown that the LiF layer affects the property of OLED resulting in the change of the capacitance of the device.

Hole-transporting polymers containing carbazol-3,9-diyl and 1,4-phenylene fragments in the main chain

New carbazole-based polymers, which contain various content of electro-active fragments in the main chain connected via alkylene spacers, have been synthesized by Ni(0)-catalyzed Yamamoto-type aryl-aryl coupling reactions. These compounds represent amorphous materials of high thermal stability with glass-transition temperatures of 139-151 degrees C and thermal decomposition starting at temperatures above 400 degrees C. UV-vis absorption and photoluminescence emission spectra of the materials confirmed that the conjugated segments in the macromolecules are rather short.

Two novel triphenylamine-substituted poly(p-phenylenevinylene) derivatives: synthesis, photo- and electroluminescent properties

Two novel triphenylamine-substituted poly(p-phenylenevinylene) derivatives, P1 and P2, have been successfully synthesized through the Witting-Horner reaction. The structures and properties of the monomers and the resulting polymers were characterized by using H-1 NMR, FT-IR, GPC, TGA, UV-vis absorption spectroscopy, cyclic voltammetry (CV) and electroluminescence (EL) spectroscopy

A Dithienylbenzothiadiazole Pure Red Molecular Emitter with Electron Transport and Exciton Self-Confinement for Nondoped Organic Red-Light-Emitting Diodes

An amorphous photoluminescent material based on a dithienylbenzothiadiazole structure has been used for the fabrication of organic red-light-emitting diodes. The synergistic effects of the electron-transport ability and exciton confinement of the emitting material allow for the fabrication of efficient pure-red-light-emitting devices without a hole blocker.

Syntheses, crystal structures, visible and near-IR luminescent properties of ternary lanthanide (Dy3+, Tm3+) complexes containing 4,4,4-trifluoro-1-phenyl-1,3-butanedione and 1,10-phenanthroline

The ligands 4,4,4-trifluoro-1-phenyl-1.3-butanedione (Hbfa) and 1,10-phenanthroline (phen) were used to prepare ternary lanthanide (Ln) complexes [Dy(bfa)(3)phen and Tm(bfa)(3)phen]. Crystal data: Dy(bfa)(3)phen C(42)H(26)FqN(2)O(6)Dy, triclinic, P (1) over bar, a= 9.9450(6) angstrom, b = 14.0944(9) angstrom, c = 14.6043(9) angstrom, alpha = 82.104(1)degrees, beta = 87.006(1)degrees, gamma = 76.490(1)degrees, V = 1971.1(2)angstrom(3), Z = 2; Tm(bfa)(3)phen C42H26F9N2O6Tm, triclinic, P (1) over bar, a = 9.898(5)angstrom, b = 13.918(5)angstrom, c = 14.753(5)angstrom, a = 83.517(5)degrees, alpha = 86.899(5)degrees, gamma = 76.818(5)degrees, V = 1965.3(14)angstrom(3), Z = 2. The coordination number of the central Ln(3+) (Ln = Dy, Tm) ion is eight, with six oxygen atoms from three Hbfa ligands and two nitrogen atoms from the phen ligand.

Blue electroluminescent polymers with dopant-host systems and molecular dispersion features: polyfluorene as the deep blue host and 1,8-naphthalimide derivative units as the light blue dopants

We developed a series of highly efficient blue electroluminescent polymers with dopant-host systems and molecular dispersion features by selecting 1,8-naphthalimide derivatives as the light blue emissive dopant units, choosing polyfluorene as the deep blue emissive polymer host and covalently attaching the dopant units to the side chain of the polymer host. The polymers' EL spectra exhibited both deep blue emission from the polymer host and light blue emission from the dopant units because of the energy transfer and charge trapping from the polymer host to the dopant units.

Highly efficient red electroluminescent polymers with dopant/host system and molecular dispersion feature: polyfluorene as the host and 2,1,3-benzothiadiazole derivatives as the red dopant

By selecting polyfluorene as the polymer host, choosing 2,1,3-benzothiadiazole derivative moieties as the red dopant units and covalently attaching 0.3 mol% of the dopant units to the side chain of the polymer host, we developed a novel series of red electroluminescent polymers of dopant/host system with molecular dispersion feature. Their EL spectra exhibited predominant red emission from the dopant units because of the energy transfer and charge trapping from the polymer backbone to the dopant units. The emission wavelength of the polymers could be tuned by modifying the chemical structures of the dopant units.

Synthesis and characterization of color-stable electroluminescent polymers: Poly(dinaphtho [1,2-a : 1 ',2 '-g]-s-indacene)s

Two new stepladder conjugated polymers, that is, poly(7,7,15,15-tetraoctyldinaphtho[1,2-a:1',2'-g]-s-indacene) (PONSI) and poly(7,7,15,15-tetra(4-octylphenyl)dinaphtho[1,2-a:1',2'-g]-s-indacene) (PANSI) with alkyl and aryl substituents, respectively, have been synthesized and characterized. In comparison with poly(indenofluorene)s, both polymers have extended conjugation at the direction perpendicular to the polymer backbone because of the introduction of naphthalene moieties. The emission color of the polymers in film state is strongly dependent on the substituents. While PONSI emits at a maximum of 463 nm, PANSI with the same backbone but aryl substituents displays dramatically redshifted emission with a maximum at 494 nm.

Near-infrared polymer light-emitting diodes based on infrared dye doped poly(N-vinylcarbazole) film

Infrared light-emitting diodes possess potential applications in optical communication and safety detection. in this paper, we fabricated near-infrared light-emitting diodes possess potential applications in optical communication and safety detection. in this paper, we fabricated near-infrared polymer light-emitting diode employing a commercial near-infrared (NIR) organic dye as an emissive dopant dispersed within poly(N-vinylcarbazole) (PVK) by spin-casting method. The used device structure was indium tin oxide/3,4-polyethylene-dioxythiophene-polystyrene sulfonate/PVK: NIR dye/Al.

Mechanisms of efficiency enhancement in the doped electroluminescent devices based on a europium complex

In this study, we investigated the dependence of electroluminescence (EL) efficiency on carrier distribution in the light-emitting layer (EML) of the device based on Eu(TTA)(3)phen (TTA = thenoyltrifluoroacetone, phen = 1, 10-phenanthroline) doped 4,4'-N,N'-dicarbazole- biphenyl (CBP) system. We found that EL efficiency increases monotonously with increasing hole injection even when holes are the majority carriers. This phenomenon was attributed to the accumulation of holes in EML, which improves the balance of holes and electrons on Eu(TTA)(3)phen molecules, thus enhancing the EL efficiency.

Synthesis, photophysical properties, and theoretical studies on pyrrole-containing bromo Re(I) complex

Two bromo rhenium(I) carbonyl complexes with the formula of [Re(CO)(3)(L)Br], where L = 1,10-phenanthroline (Phen-Re) and 5-(1H-pyrrol-1-yl)-1,10-phenanthroline (Pyph-Re), were successfully synthesized with the aim to analyze the effect of the pyrrole (Py) moiety on the photophysical properties of Pyph-Re. It was found that the triplet metal-to-ligand charge-transfer d pi (Re) --> pi*(N-N) emission of Phen-Re and Pyph-Re centered at ca. 527 nm with the luminescence quantum yield (LQY) of 0.015 and ca. 578 nm with the LQY of 0.011, respectively. At the same time, the geometrical structures of the ground state and the absorption spectral properties of Phen-Re and Pyph-Re were also calculated with the 6-31G* basis set employed on C, H, N, O, and Br atoms, and LANL2DZ adopted on Re atom.