Photovoltage and luminescence study of stacked InAs/GaAs self-organized quantum dots

The ground and excited state excitonic transitions of stacked InAs self-organized quantum dots (QDs) in a laser diode structure are studied. The interband absorption transitions of QDs are investigated by non-destructive PV spectra, indicating that the strongest absorption is related to the excited states with a high density and coincides with the photon energy of lasing emission. The temperature and excitation (electric injection) intensity dependences of photoluminescence and electroluminescence indicate the influence of state filling effect on the luminescence of threefold stacked QDs. The results indicate that different coupling channels exist between electronic states in both vertical and lateral directions.

Deutsch Forsch Gemeinsch.; IFV Kompetenzzentrum TEMA B.; AIXTRON AG.; DaimlerChrysler AG.; EPICHEM Ltd.; Freiberger Compound Mat GmbH.; Infineon Technologies AG.; RIBER GmbH.; United Monolith Semiconductors GmbH.; VTS CreaTec GmbH.; Wafer Technol Ltd.