THE OXIDATION-KINETICS OF THIN POLYCRYSTALLINE SILICON FILMS

The oxidation dynamics and morphology of undoped and heavily phosphorus-doped polycrystalline silicon films oxidized at a wide temperature and time range in dry and wet O2 atmosphere have been investigated. It is shown that the oxidation rates of polycrystalline silicon films are different from that of single-crystal silicon when the oxidation temperature is below 1000-degrees-C. There is a characteristic oxidation time, t(c), under which the undoped polysilicon oxide is not only thicker than that of (100)-oriented single-crystal silicon, but also thicker than that of (111)-oriented single-crystal silicon. For phosphorus-doped polycrystalline silicon films, the oxide thickness is thinner not only than that of (111)-oriented, single-crystal silicon, but also thinner than that of (100)-oriented, single-crystal silicon. According to TEM cross-sectional studies, these characteristics are due to the enhanced oxidation at grain boundaries of polycrystalline silicon films. A stress-enhanced oxidation model has been proposed and used to explain successfully the enhanced oxidation at grain boundaries of polycrystalline silicon films. Using this model, the oxidation linear rate constant of polysilicon (B/A)poly has been calculated and used in the modeling of the oxidation dynamics. The model results are in good agreement with the experimental data over the entire temperature and time ranges studied.

Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures

Properties of GaAs single crystals grown at low temperatures by molecular beam epitaxy (LTMBE GaAs) have been studied. The results shaw that excessive arsenic atoms of about 10(20) cm(-3) exist in LTMBE GaAs in the form of arsenic interstitial couples, and cause the dilation in lattice parameter of LTMBE GaAs, The arsenic interstitial couples will be decomposed, and the excessive arsenic atoms will precipitate during the annealing above 300 degrees C. Arsenic precipitates accumulate in the junctions of epilayers with the increase in the temperature of annealing. The depletion regions caused by arsenic precipitates overlap each other in LTMBE GaAs, taking on the character of high resistivity, and the effects of backgating or sidegating are effectively restrained.

一种基于高维形象几何理论的彩色图像增强算法

基于近年来发展起来的全新理论——高维形象几何与仿生信息学，提出一种彩色图像增强算法。本算法将彩色图像看作是高维空间的点，通过对多幅图片的分析，推导出点与点之间的内在联系，提出“模糊-再模糊-清晰”的增强算法，并由实验证明该算法对模糊图像的清晰化有很好的效果。

PECVD沉积SiO_2和SiN_x对p-GaN的影响

在等离子增强化学气相沉积法（PECVD）沉积SiO_2和SiNx掩蔽层过程中，分解等离子体中浓度较高的H原子使Mg~-受主钝化，同时在p-GaN材料表面发生反应形成浅施主特性的N_v~+，空位。高能量离子轰击造成的材料深能级缺陷增多以及沉积形成致密的SiO_2和SiN_x材料，阻碍了H原子向外扩散，使H原子在Ni／Au电极与p-GaN的界面处聚集，造成p-GaN近表面附近区域Mg-H络合物密度的提高，空穴浓度急剧下降，导致Ni／Au透明电极I-V特性严重恶化。选择较低的射频功率（15W，13．56MHz）沉积模式，经过适当的退火，可以减小沉积SiO_2过程对p-GaN的影响。

A Multi-Finger Si_(1-x)Ge_x/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications

A large area multi-finger configuration power SiGe HBT device(with an emitter area of about 880μm~2)was fabricated with 2μm double-mesa technology.The maximum DC current gain β is 214.The BV_(CEO) is up to 10V,and the BV_(CBO) is up to 16V with a collector doping concentration of 1×10~(17)cm~(-3) and collector thickness of 400nm.The device exhibits a maximum oscillation frequency f_(max) of 19.3GHz and a cut-off frequency f_T of 18.0GHz at a DC bias point of I_C=30mA and V_(CE)=3V.MSG(maximum stable gain)is 24.5dB,and U(Mason unilateral gain)is 26.6dB at 1GHz.Due to the novel distribution layout,no notable current gain fall-off or thermal effects are observed in the I-V characteristics at high collector current.

基于BP神经网络的系统级电源管理算法

在深入研究目前国际上比较流行的几种系统级电源管理（PM）算法的基础上，利用BP神经网络的非线性映射能力，提出基于BP神经网络的、对任务之间相互间隔时间也就是系统空闲时段的长度进行自适应学习的BPPM算法，具有传统回归PM算法不可比拟的优点。仿真实验表明引入神经网络的电源管理算法较之传统PM算法大大降低了系统级功耗。实现了在不需要建立系统模型、无需预先获得负载统计特性的前提下，通过从系统正常工作产生的数据中不断学习，使系统具有自适应、高效的电源管理能力，以达到降低系统功耗、提高器件可靠性、延长工作寿命的目的。

选择外延MOVPE的表面迁移

研究了采用选择外延MOVPE生长InGaAsP的组分随掩模宽度的变化规律，以及InGaAsP表面边缘尖角随V／III比的变化。结果表明，随着掩模宽度的增大，In组分增大，Ga组分减少；随着V／III比的增大，InGaAsP材料表面趋向平坦。对材料边缘尖角的变化规律作出了合理解释，研制出表面平坦的外延材料，为器件研制提供了有效的方法。

High Temperature1.3μm AlGaInAs/In PStrained Multiquantum Well Laser Grownby Metalorganic Vapor Phase Epitaxy

国家863计划

Influence of precipitates on GaN epilayer quality

GaN epilayers grown on pre-nitridated (0001) sapphire substrates by metallorganic vapor phase epitaxy were investigated by wavelength dispersive X-ray spectroscopy and energy dispersive S-ray spectroscopy. Precipitates were observed to mainly consist of O impurity whose strengths were weaker than surrounding matrix. The precipitates were larger in size and distributed more sparsely and inhomogeneously in < 11-20 > directions of the epilayers grown on substrates pre-nitridated for longer periods. The larger precipitates often joined to cracks in the TEM specimens. The crack formation seems to be attributed to the compressive stress concentration at edge angles of the larger precipitates. Yellow luminescence of the epilayers was imaged by cathodoluminescence. The distribution similarity between the cathodoluminescence and the precipitates suggested that the precipitates were responsible for the yellow luminescence band. (C) 2000 Elsevier Science S.A, All rights reserved.

Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate

We analyze low-temperature Raman and photoluminescence spectra of MBE-grown GaN layers on sapphire. Strong and sharp Raman peaks are observed in the low frequency region. These peaks, which are enhanced by excitation in resonance with yellow luminescence transitions, are attributed to electronic transitions related to shallow donor levels in hexagonal GaN. It is proposed that a low frequency Raman peak at 11.7 meV is caused by a pseudo-local vibration mode related to defects involved in yellow luminescence transitions. The dependence of the photoluminescence spectra on temperature gives additional information about the residual impurities in these GaN layers.

基于CMMI-ACQ的信息技术和服务安全采购模型

进入21世纪,软件外包及采购已逐渐成为信息技术服务使用组织的首要选择,软件的安全性直接影响着软件的使用,组织财产及人员生命安全。因而对采购组织而言,采购安全性直接关系到组织的各方面利益。目前的相关研究均未能将安全属性纳入采购过程考虑,忽略了采购过程本身的安全性。本文提出了一种基于CMMI-ACQ的安全采购模型,在CMMI-ACQ模型的基础上,引入了ISO27000安全标准的要求。本文旨在关注采购过程中的安全性目标和实践,为组织提供实际的安全采购指导,帮助组织进行安全的信息技术和服务采购,保证软件及其应用的安全性,避免组织因安全隐患带来的损失。