Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate
Data(s) |
1998
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Resumo |
We analyze low-temperature Raman and photoluminescence spectra of MBE-grown GaN layers on sapphire. Strong and sharp Raman peaks are observed in the low frequency region. These peaks, which are enhanced by excitation in resonance with yellow luminescence transitions, are attributed to electronic transitions related to shallow donor levels in hexagonal GaN. It is proposed that a low frequency Raman peak at 11.7 meV is caused by a pseudo-local vibration mode related to defects involved in yellow luminescence transitions. The dependence of the photoluminescence spectra on temperature gives additional information about the residual impurities in these GaN layers. We analyze low-temperature Raman and photoluminescence spectra of MBE-grown GaN layers on sapphire. Strong and sharp Raman peaks are observed in the low frequency region. These peaks, which are enhanced by excitation in resonance with yellow luminescence transitions, are attributed to electronic transitions related to shallow donor levels in hexagonal GaN. It is proposed that a low frequency Raman peak at 11.7 meV is caused by a pseudo-local vibration mode related to defects involved in yellow luminescence transitions. The dependence of the photoluminescence spectra on temperature gives additional information about the residual impurities in these GaN layers. 于2010-11-15批量导入 zhangdi于2010-11-15 17:02:37导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-15T09:02:37Z (GMT). No. of bitstreams: 1 3060.pdf: 274884 bytes, checksum: 16cdb21eb97a431a6aaf7fa9bc244174 (MD5) Previous issue date: 1998 IEEE.; Motorola.; USN, Off Naval Res.; Siemens.; Aixtron.; EPI. Paul Drude Inst Solid State Elect, D-10117 Berlin, Germany; Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China; Siemens Corp Res & Dev, D-81730 Munich, Germany IEEE.; Motorola.; USN, Off Naval Res.; Siemens.; Aixtron.; EPI. |
Identificador | |
Idioma(s) |
英语 |
Publicador |
IOP PUBLISHING LTD TECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX |
Fonte |
Jiang DS; Ramsteiner M; Brandt O; Ploog KH; Tews H; Graber A; Averbeck R; Riechert H .Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate .见:IOP PUBLISHING LTD .COMPOUND SEMICONDUCTORS 1997, 156,TECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX ,1998,211-214 |
Palavras-Chave | #半导体物理 #SHALLOW DONORS |
Tipo |
会议论文 |