Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate


Autoria(s): Jiang DS; Ramsteiner M; Brandt O; Ploog KH; Tews H; Graber A; Averbeck R; Riechert H
Data(s)

1998

Resumo

We analyze low-temperature Raman and photoluminescence spectra of MBE-grown GaN layers on sapphire. Strong and sharp Raman peaks are observed in the low frequency region. These peaks, which are enhanced by excitation in resonance with yellow luminescence transitions, are attributed to electronic transitions related to shallow donor levels in hexagonal GaN. It is proposed that a low frequency Raman peak at 11.7 meV is caused by a pseudo-local vibration mode related to defects involved in yellow luminescence transitions. The dependence of the photoluminescence spectra on temperature gives additional information about the residual impurities in these GaN layers.

We analyze low-temperature Raman and photoluminescence spectra of MBE-grown GaN layers on sapphire. Strong and sharp Raman peaks are observed in the low frequency region. These peaks, which are enhanced by excitation in resonance with yellow luminescence transitions, are attributed to electronic transitions related to shallow donor levels in hexagonal GaN. It is proposed that a low frequency Raman peak at 11.7 meV is caused by a pseudo-local vibration mode related to defects involved in yellow luminescence transitions. The dependence of the photoluminescence spectra on temperature gives additional information about the residual impurities in these GaN layers.

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IEEE.; Motorola.; USN, Off Naval Res.; Siemens.; Aixtron.; EPI.

Paul Drude Inst Solid State Elect, D-10117 Berlin, Germany; Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China; Siemens Corp Res & Dev, D-81730 Munich, Germany

IEEE.; Motorola.; USN, Off Naval Res.; Siemens.; Aixtron.; EPI.

Identificador

http://ir.semi.ac.cn/handle/172111/15081

http://www.irgrid.ac.cn/handle/1471x/105258

Idioma(s)

英语

Publicador

IOP PUBLISHING LTD

TECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX

Fonte

Jiang DS; Ramsteiner M; Brandt O; Ploog KH; Tews H; Graber A; Averbeck R; Riechert H .Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate .见:IOP PUBLISHING LTD .COMPOUND SEMICONDUCTORS 1997, 156,TECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX ,1998,211-214

Palavras-Chave #半导体物理 #SHALLOW DONORS
Tipo

会议论文