High Temperature1.3μm AlGaInAs/In PStrained Multiquantum Well Laser Grownby Metalorganic Vapor Phase Epitaxy
| Data(s) |
1999
|
|---|---|
| Resumo |
国家863计划 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
陈博;汪孝杰;王圩.High Temperature1.3μm AlGaInAs/In PStrained Multiquantum Well Laser Grownby Metalorganic Vapor Phase Epitaxy,半导体学报,1999,20(3):214 |
| Palavras-Chave | #半导体器件 |
| Tipo |
期刊论文 |
