AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD

A novel AlGaN/GaN/GaN/GaN double heterojunction high electron mobility transistors (DH-HEMTS) structure with an AlN interlayer on sapphire substrate has been grown by MOCVD. The structure featured a 6-10 nm In0.1Ga0.9N layer inserted between the GaN channel and GaN buffer. And wer also inserted one ultrathin. AlN interlayer into the Al/GaN/GaN interface, which significantly enhanced the mobility of two-dimensional electron gas (2DEG) existed in the GaN channel. AFM result of this structure shows a good surface morphology and a low dislocation density, with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5 mu m x 5 mu m. Temperature dependent Hall measurement was performed on this sample, and a mobility as high as 1950 cm(2)/Vs at room temperature (RT) was obtained. The sheet carrier density was 9.89 x10(12) cm(2), and average sheet resistance of 327 Omega/sq was achieved. The mobility obtained in this paper is about 50% higher than other results of similar structures which have been reported. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD

AlGaN/AlN/GaN/InGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) structures with improved buffer isolation have been investigated. The structures were grown by MOCVD on sapphire substrate. AFM result of this structure shows a good surface morphology with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5 mu mx5 mu m. A mobility as high as 1950 cm(2)/Vs with the sheet carrier density of 9.89x10(12) cm(-2) was obtained, which was about 50% higher than other results of similar structures which have been reported. Average sheet resistance of 327 Omega/sq was achieved. The HEMTs device using the materials was fabricated, and a maximum drain current density of 718.5 mA/mm, an extrinsic transconductance of 248 mS/mm, a current gain cutoff frequency of 16 GHz and a maximum frequency of oscillation 35 GHz were achieved.

由一阶逻辑公式得到命题逻辑可满足性问题实例

命题逻辑可满足性(SAT)问题是计算机科学中的一个重要问题.近年来许多学者在这方面进行了大量的研究,提出了不少有效的算法.但是,很多实际问题如果用一组一阶逻辑公式来描述,往往更为自然.当解释的论域是一个固定大小的有限集合时,一阶逻辑公式的可满足性问题可以等价地归约为 SAT 问题.为了利用现有的高效 SAT工具,提出了一种从一阶逻辑公式生成 SAT 问题实例的算法,并描述了一个自动的转换工具,给出了相应的实验结果.还讨论了通过增加公式来消除同构从而减小搜索空间的一些方法.实验表明,这一算法是有效的,可以用来解决数学研究和实际应用中的许多问题.

黄土高原坡地枣树地膜微集水造林效果研究

在黄土高原丘陵沟壑区,采用田间试验研究了地膜微集水造林技术对提高枣树成活率、土壤温度以及枣树根区土壤水分含量的影响。结果表明:地膜微集水方法提高枣树移栽期0~100cm土层土壤水分,提高0~20 cm土层地温,造林成活率较对照提高15%;在枣树生长期和发芽期,土壤0~100 cm剖面含水量比对照高30.3%;在集中降雨后48 h内,土壤水分下渗深度比对照深34 cm,达到67 cm。该方法成本低、操作简单、效率高,可以在黄土高原枣树栽植中推广应用。

铵态氮肥对黄土高原典型土壤氮素激发效应的影响

以黄土高原从北向南不同地区典型土壤类型为对象,采用Bremner淹水培养法,研究铵态氮肥对黄土高原典型土壤氮素的激发效应。结果表明,在测定NH4+-N的激发效应时,只有考虑粘土矿物对有机氮矿化产物或者添加NH4+-N的固定,才可获得可靠结果。在培养20 d和60 d时,NH4+-N对不同土类氮素激发效应存在极显著和显著的影响(P≤0.01和<0.05);培养40 d时,尽管不同土类氮素激发效应也存在很大差异,但统计检验不显著。从整体评价,NH4+-N对土垫旱耕人为土和黄土正常新成土表现出正的激发效应,而对干润砂质新成土表现出负的激发效应,对简育干润均腐土在培养20 d和40 d时无激发效应,而在培养60 d时,表现出显著的负激发效应。结果还看出,在培养40 d和60 d时,NH4+-N对农田土壤表现出负激发效应,对林地和裸地土壤表现出正激发效应,而草地土壤在培养40 d时为正激发效应;培养20 d和60 d时无激发效应。添加有机物料在培养20 d和40 d时对激发效应的影响不显著(P=0.0872和0.1641),培养时间延长至60 d时影响显著(P=0.049)。添加紫花苜蓿(Medicago sati-v...

正常及光感受器损伤兔眼视网膜下芯片植人后的电生理结果

目的 观察视网膜下芯片所引起的光感受器损伤及正常兔眼的电生理改变。方法 青紫蓝兔共30只，其中22只兔NaIO_3生理盐水溶液静脉注人后眼光感受器受到损伤。将一个由90个微光电二极管组成的阵列和相连电极构成的直径约3 mm的芯片通过巩膜切口植人4只正常及22只注药后光感受器损伤兔右眼的视网膜下腔或脉络膜中,左眼为对照眼;分别检测芯片眼及对照眼局部闪光视觉诱发电位（F-VEP)、局部闪光视网膜电图(F-ERG)、全视野闪光VEP及全视野闪光ERG.另外4只兔双眼摘作病理检查。结果 22只色光感受器损伤兔中有11只芯片眼的局部ERG主波振幅明显大于对照眼；4只正常兔中，2只芯片眼的局部ERG主波振幅大于对照眼。1只芯片眼表面视网膜出现破孔不能引出任何波。局部VEP及全视野闪光VEP重复性较差，全视野闪光ERG未见明确差别。结论 植人的芯片在受到光刺激后可刺激局部视网膜并引起局部视网膜的电活动。

Monolithically Integrated Optoelectronic Receivers Implemented in 0. 25μm MS/RF CMOS

A monolithically integrated optoelectronic receiver is presented. A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging. Implemented in the present deep sub-micron MS/RF （mixed signal, radio frequency） CMOS,this monolithically OEIC takes advantage of several new features to improve the performance of the photo-diode and eventually the whole OEIC.

Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides

In order to improve the total-dose radiation hardness of the buried oxides(BOX) in the structure of separa tion-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI), nitrogen ions are implanted into the buried oxides with two different doses,2 × 1015 and 3 × 1015 cm-2 , respectively. The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co-60 source. Despite the small difference between the doses of nitrogen implantation, the nitrogen-implanted 2 × 1015 cm-2 BOX has a much higher hardness than the control sample (i. e. the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5 × 104rad(Si), whereas the nitrogen-implanted 3 × 1015 cm-2 BOX has a lower hardness than the control sample. However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5 × 104 to 5 × 105 rad (Si)). The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed. In addition, the abnormal HF C-V curve of the metal-silicon-BOX-silicon(MSOS) structure is observed and explained.

In0.2 Ga0.8 As-GaAs复合应力缓冲层上的1.3 μmInAs/GaAs自组织量子点

用光荧光谱和原子力显微镜测试技术系统研究了在2 nm In0.2Ga0.8As和x ML GaAs的复合应力缓冲层上生长的InAs/GaAs自组织量子点的发光特性和表面形貌.采用In0.2Ga0.8As与薄层GaAs复合的应力缓冲层,由于减少了晶格失配度致使量子点密度从约1.7×109 cm-2显著增加到约3.8×109cm-2.同时,复合层也有利于提高量子点中In的组份,使量子点的高宽比增加,促进量子点发光峰红移.对于x=10 ML的样品室温下基态发光峰达到1350 nm.

纳米硅薄膜光学性质的测定与研究

通过测定纳米硅薄膜的透射谱,建立计算模型计算得出薄膜样品的折射率、厚度、吸收系数和光能隙.计算结果表明这种半导体材料在620 nm波长附近的折射率约为3.4,计算得到的厚度与用台阶仪测量的结果吻合很好.在620 nm波长附近的吸收系数介于吸收系数较小的晶体硅与吸收系数较大的非晶硅之间,光能隙约为1.6 eV,两者都随晶态含量增大而呈减小趋势.