High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells

We have measured low-temperature photoluminescence (PL) and absorption spectra of In0.2Ga0.8As/GaAs multiple quantum wells (MQW's) under hydrostatic pressures up to 8 GPa. In PL, only a single peak is observed below 4.9 GPa corresponding to the n = 1 heavy-hole (HH) exciton in the InxGa1-xAs wells. Above 4.9 GPa, new PL lines related to X-like conduction band states appear. They are assigned to the type-II transition from the X(Z) states in GaAs to the HH subband of the InxGa1-xAs wells and to the zero-phonon line and LO-phonon replica of the type-I transition involving the X(XY) valleys of the wells. In addition to absorption peaks corresponding to direct exciton transitions in the wells, a new strong absorption feature is apparent in spectra for pressures between 4.5 and 5.5 GPa. This absorption is attributed to the pseudodirect transition between the HH subband and the X, state of the wells. This gives clear evidence for an enhanced strength of indirect optical transitions due to the breakdown of translational invariance in MQW structures. From experimental level splittings we determine the valence band offset and the shear deformation potential for X states in the In0.2Ga0.8As layer.

1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications

A zero-pole cancellation transimpedance amplifier (TIA) has been realized in 0.35 μm RF CMOS tech nology for Gigabit Ethernet applications. The TIA exploits a zero-pole cancellation configuration to isolate the input parasitic capacitance including photodiode capacitance from bandwidth deterioration. Simulation results show that the proposed TIA has a bandwidth of 1.9 GHz and a transimpedance gain of 65 dB·Ω for 1.5 pF photodiode capaci tance, with a gain-bandwidth product of 3.4 THz·Ω. Even with 2 pF photodiode capacitance, the bandwidth exhibits a decline of only 300 MHz, confirming the mechanism of the zero-pole cancellation configuration. The input resis tance is 50 Ω, and the average input noise current spectral density is 9.7 pA/(Hz)~(1/2). Testing results shows that the eye diagram at 1 Gb/s is wide open. The chip dissipates 17 mW under a single 3.3 V supply.

Growth of near planar Si0.5Ge0.5 epitaxial layers directly on Si substrate by UHV/CVD at 500℃

The relationship between Ge content of Si1-xGex layers and growth conditions was investigated via UHV/CVD system at relative low temperature of 500℃. Si1-xGex layers were in a metastable state in this case. 10-period strained 3.0 nm- Si0.5Ge0.5/3.4 nm- Si multi quantum wells were obtained directly on Si substrate. Raman Measurement, high resolution electron microscopy and photoluminescence were used to characterize the structural and optical properties. It is found that such relative thick Si0.5Ge0.5/Si multi quantum wells are still near planar and free of dislocations, that makes it exploit applications to electrical and optical devices.

Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier

The theoretical optimization of tensile strained InGaAsP/InGaAsP MQW for 1.5μm window polarization-independent semiconductor optical amplifier is reported. The valence-band structure of the MQw is calculated by using K·P method, in which 6×6 Luttinger effective-mass Hamiltonian is taken into account. LThe polarization dependent optical gain is calculated with various well width, strain, and carrier density.

预注入对Si_（1-x）C_x合金形成的影响

室温下在单晶Si中注入(0.6-1.5)at%的C原子，部分样品在C离子注入之前在其中注入~(29)Si~+离子产生损伤，然后在相同条件下利用高温退火固相外延了Si_(1-x)C_x合金，研究了预注入对Si_(1-x)C_x合金形成的影响。如果注入C离子的剂量小于引起Si非晶化的剂量，在950℃退火过程中注入产生的损伤缺陷容易与C原子结合形成缺陷团簇，难于形成Si_(1-x)C_x合金，预注入形成的损伤有利于合金的形成。随着C离子剂量的增大，注入产生的损伤增强，预注入反而不利于Si_(1-x)C_x合金的形成，但当注入C原子的浓度超过固相外延的溶解度时，预注入的影响可以忽略。退火温度升高到1050℃，无论预注入还是未预注入样品，C含量低的合金相仍然保留，而C含量高的合金相大部分消失。

不同剂量C离子注入Si单晶中Si_(1-x)C_x合金的形成及其特征

室温下在单晶Si中注入(0.6-1.5)%的C原子，利用高温退火固相外延了Si_(1-x)C_x合金，研究了不同注入剂量下Si_(1-x)C_x合金的形成及其特征，如果注入C原子的浓度小于0.6%，在850-950℃退火过程中，C原子容易与注入产生的损伤缺陷结合，难于形成Si_(1-x)C_x合金相。随注入C原子含量的增加，C原子几乎全部进入晶格位置形成Si_(1-x)C_x合金，但如果注入C原子的浓度达到1.5%，只有部分C原子参与形成Si_(1-x)C_x合金。升高退火温度，Si_(1-x)C_x合金相基本消失。

Er离子在Inp、GaAs和Si中的1.54μm特征发光峰

分别在InP、GaAs和Si中以7×10＜′14＞和1×10＜′15＞cm＜′－2＞的剂量进行Er离子注入, 并采用闭管、快速和炉退火等热处理。低温光致发光（PL）、反射式高等电子衍射和卢瑟福背散射实验研究表明, 上述样品中Er＜′3＋＞离子特征发光的中心波长均出现在1．5μm处, 其中InP的发光峰最强, 而注入损伤的恢复是影响Er＜′3＋＞发光的重要因素之一。卢瑟福背散射分析进一步证实退火后Er原子在Si中向表面迁移, 而在InP中的外扩散较小, 并比较了Er在InP和Si晶格中的占位情况。图7参12

Effect of Nozzle Temperature on the Performance of a 1 kW H2-N2 Arcjet Thruster

A 1 kW-class arcjet thruster was ¯red in a vacuum chamber at a pressure of 18 Pa. A gas mixture of H2 : N2 = 2.8 : 1.5 in volume at a total °ow rate of 4.3 slm was used as the propellant with an input power ¯xed at 860 W. The time-dependent thrust, nozzle temperature and inlet pressure of the propellant were measured simultaneously. Results showed that with the increase in nozzle temperature the thrust decreased and various losses increased. The physical mechanisms involved in these effects are discussed.

5-氟尿嘧啶-β-环糊精结肠靶向前体药物的研究

5-氟尿嘧啶(5-Fluorouracil， 5-FU)是一种抗代谢药物，广泛用于临床治疗结直肠癌、胃癌、乳腺癌等多种癌症，但其首过代谢显著、亲脂性较低，选择性差、毒副作用大。为克服这些缺点人们对5-FU进行了大量的修饰工作，包括小分子修饰以及与各种载体形成微球、微囊、纳米粒、共价前药等。 环糊精(Cyclodextrin，简称CD)，可被结肠中的糖苷酶特异性地降解成小分子糖，而胃和小肠中由于缺乏相应的酶而使环糊精不被降解，这一特性在结肠药物的靶向输送及释放中有重要应用价值。环糊精中含有丰富的羟基，易进行化学修饰，将药物与环糊精通过共价键结合制成前药，使其在胃和小肠中不降解，而在盲结肠中被特异性的酶降解释出药物，达到结肠靶向释药的目的。研究表明，环糊精作为一种前药载体为结肠靶向释药和缓释、控释系统提供了一种有效的手段。 本工作选择5-氟尿嘧啶为模型药物、β-环糊精作为载体，通过中间体5-FU羧酸衍生物的制备及其与β-环糊精的偶联，合成了系列5-FU-β-CD前体药物，并利用紫外、红外、质谱、核磁、元素分析、热分析等手段对其进行结构表征。同时，还研究了前体药物的体外释药性质。具体内容包括： 1. 含有羧基的5-FU衍生物中间体的合成：(5-氟尿嘧啶-1-基)-乙酸(FUAC)、3-(5-氟尿嘧啶-1-基)-丙酸(FUPC)、5-(5-氟尿嘧啶-1-基)-戊酸(FUVC)的合成。 2. 中间体5-FU的羧酸衍生物与β-CD的偶联：分别通过以6-OTs-β-CD为中间体的取代法和活化酯法，合成了第一面取代和第二面取代的5-FU-β-CD大分子前体药物。在二面取代的前体药物制备中，通过改变原料的比例，合成了系列不同取代度(DS)的2-[(5-氟尿嘧啶-1-基)-乙酰基] -β-环糊精结合物。 3. 对上述前体药物进行体外释放研究：分别考察了前体药物在不同pH缓冲溶液中的水解行为及其在小鼠胃肠道人工体液中的酶解行为，并通过UV-Vis及HPLC对前体药物释放情况进行检测分析。 5-Fluorouracil(5-Fu), commonly known as a broad-spectrum antineoplastic drug, has been widely used in the treatment of various kinds of cancer including colon cancer for 40 years. However, this antitumor agent exhibits serious adverse effects, such as their marrow toxicity, gastrointestinal reaction and low selectivity in their clinical use. In order to improve its antitumor activity and reduce its toxicity, the compound was modified in various ways, including the formation of conjugated prodrugs with kinds of carrier, microsphere and nanoparticles etc. Cyclodextrins(CDs) are known to be barely capable of being hydrolyzed and only slightly absorbed in passing through the stomach and small intestine; however they are fermented into small saccharides by colonic microflora and thus absorbed as small saccharides in the large intestine. This biodegradation property of CDs may be useful as a colon-targeting carrier, and thus CD prodrugs may serve as a source of site-specific delivery of drugs to colon. It was demonstrated that prodrugs of CDs can provide a versatile means for construction of not only colon targeted delivery systems, but also delayed release systems. 5-Fluorouracil was taken as a model drug and β-CD as the carrier in this study. Series prodrugs of 5-FU was prepared through the preparation of reactive 5-FU derivatives containing carboxyl group and coupling to hydroxyl groups of CD. The structures of the conjugates were charactered by using IR, UV–vis, ESI-MS, 1H, 13C-NMR spectra, elemental analyses, and thermal analysis. In vitro hydrolysis behavior in aqueous solution and in rat gastrointestinal tract contents of the conjugates were also investigated. The main content of this dissertation includes following aspects: 1. The preparation of 5-FU derivatives containing carboxyl group: 5-Fluorouracil- acetic acid(FUAC)、3-(5-FU-1)-propionic acid (FUPC)、and 5-(5-FU-1)-valeric acid(FUVC). 2. The coupling of 5-FU derivatives to β-CD: 5-FU was selectively conjugated onto the primary or secondary hydroxyl groups of β-CD through an ester linkage, by the substitution of 6-OTs-β-CD and the activated ester method respectively. For the secondary face conjugation, the degree of substitution(DS) can be controlled by changing the mole ratio of the starting materials(FUAC and β-CD). 3. In vitro release behavior of the conjugates in aqueous solution and in rat gastro- intestinal tract contents of the conjugates were investigated, and the reaction was monitored and analyzed by using UV-Vis and HPLC methods.

预注入对Si_(1-x)C_x合金形成的影响

室温下在单晶Si中注入 (0 6— 1 5 )at%的C原子 ,部分样品在C离子注入之前在其中注入2 9Si+ 离子产生损伤 ,然后在相同条件下利用高温退火固相外延了Si1 -xCx 合金 ,研究了预注入对Si1 -xCx 合金形成的影响 .如果注入C离子的剂量小于引起Si非晶化的剂量 ,在 95 0℃退火过程中注入产生的损伤缺陷容易与C原子结合形成缺陷团簇 ,难于形成Si1 -xCx 合金 ,预注入形成的损伤有利于合金的形成 .随着C离子剂量的增大 ,注入产生的损伤增强 ,预注入反而不利于Si1 -xCx 合金的形成 ,但当注入C原子的浓度超过固相外延的溶解度时 ,预注入的影响可以忽略 .退火温度升高到 10 5 0℃ ,无论预注入还是未预注入样品 ,C含量低的合金相仍然保留 ,而C含量高的合金相大部分消失 .

不同剂量C离子注入Si单晶中Si_(1-x)C_x合金的形成及其特征

室温下在单晶Si中注入 (0 6— 1 5 ) %的C原子 ,利用高温退火固相外延了Si1-xCx 合金 ,研究了不同注入剂量下Si1-xCx 合金的形成及其特征 .如果注入C原子的浓度小于 0 6 % ,在 85 0— 95 0℃退火过程中 ,C原子容易与注入产生的损伤缺陷结合 ,难于形成Si1-xCx 合金相 .随注入C原子含量的增加 ,C原子几乎全部进入晶格位置形成Si1-xCx 合金 ,但如果注入C原子的浓度达到 1 5 % ,只有部分C原子参与形成Si1-xCx 合金 .升高退火温度 ,Si1-xCx 合金相基本消失 .

Raman spectroscopy of apatite irradiated with swift heavy ions with and without simultaneous exertion of high pressure

Durango apatite was irradiated with energetic U ions of 2.64 GeV and Kr ions of 2.1 GeV, with and without simultaneous exposure to a pressure of 10.5 GPa. Analysis by confocal Raman spectroscopy gives evidence of vibrational changes being marginal for fluences below 5x10(11) ions/cm(2) but becoming dominant when increasing the fluence to 8x10(12) ions/cm(2). Samples irradiated with U ions experience severe strain resulting in crystal cracking and finally breakage at high fluences. These radiation effects are directly linked to the formation of amorphous tracks and the fraction of amorphized material increasing with fluence. Raman spectroscopy of pressurized irradiated samples shows small shifts of the band positions with decreasing pressure but without a significant change of the Gruneisen parameter. Compared to irradiations at ambient conditions, the Raman spectra of apatite irradiated at 10.5 GPa exhibit fewer modifications, suggesting a higher radiation stability of the lattice by the pressure applied.

1∶50万SOTER制图与数据采集——以辽河下游地区为例

本文阐述辽河下游地区 1∶5 0万SOTER建立中SOTER图编制与数据采集的过程及有关问题 .

Bulk ultrafine binderless (W0.4Al0.6)C prepared by high pressure sintering

Pure (W0.4Al0.6)C powder of about 1 mu m in diameter was sintered by the high pressure sintering (HPS) process without the addition of any binder phase. The microstructure, Vickers micro hardness and density versus the sintering time and temperature are well described. The most suitable sintering condition under pressure of 4.5 GPa is 1873 K for 8 min. Under this sintering condition, the hardness can reach 2295 kg mm(-2) and the relative density can reach 98.6%.