1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications
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2009
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Resumo |
A zero-pole cancellation transimpedance amplifier (TIA) has been realized in 0.35 μm RF CMOS tech nology for Gigabit Ethernet applications. The TIA exploits a zero-pole cancellation configuration to isolate the input parasitic capacitance including photodiode capacitance from bandwidth deterioration. Simulation results show that the proposed TIA has a bandwidth of 1.9 GHz and a transimpedance gain of 65 dB·Ω for 1.5 pF photodiode capaci tance, with a gain-bandwidth product of 3.4 THz·Ω. Even with 2 pF photodiode capacitance, the bandwidth exhibits a decline of only 300 MHz, confirming the mechanism of the zero-pole cancellation configuration. The input resis tance is 50 Ω, and the average input noise current spectral density is 9.7 pA/(Hz)~(1/2). Testing results shows that the eye diagram at 1 Gb/s is wide open. The chip dissipates 17 mW under a single 3.3 V supply. the National Natural Science Foundation of China,the National High Technology Research and Development Program of China |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Huang Beiju;Zhang Xu;Chen Hongda.1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications,半导体学报,2009,30(10):81-85 |
Palavras-Chave | #光电子学 |
Tipo |
期刊论文 |