1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications


Autoria(s): Huang Beiju; Zhang Xu; Chen Hongda
Data(s)

2009

Resumo

A zero-pole cancellation transimpedance amplifier (TIA) has been realized in 0.35 μm RF CMOS tech nology for Gigabit Ethernet applications. The TIA exploits a zero-pole cancellation configuration to isolate the input parasitic capacitance including photodiode capacitance from bandwidth deterioration. Simulation results show that the proposed TIA has a bandwidth of 1.9 GHz and a transimpedance gain of 65 dB·Ω for 1.5 pF photodiode capaci tance, with a gain-bandwidth product of 3.4 THz·Ω. Even with 2 pF photodiode capacitance, the bandwidth exhibits a decline of only 300 MHz, confirming the mechanism of the zero-pole cancellation configuration. The input resis tance is 50 Ω, and the average input noise current spectral density is 9.7 pA/(Hz)~(1/2). Testing results shows that the eye diagram at 1 Gb/s is wide open. The chip dissipates 17 mW under a single 3.3 V supply.

the National Natural Science Foundation of China,the National High Technology Research and Development Program of China

Identificador

http://ir.semi.ac.cn/handle/172111/15695

http://www.irgrid.ac.cn/handle/1471x/101886

Idioma(s)

英语

Fonte

Huang Beiju;Zhang Xu;Chen Hongda.1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications,半导体学报,2009,30(10):81-85

Palavras-Chave #光电子学
Tipo

期刊论文