Multi-channel micro neural probe fabricated with SOI

Silicon-on-insulator (SOI) substrate is widely used in micro-electro-mechanical systems (MEMS). With the buried oxide layer of SOI acting as an etching stop, silicon based micro neural probe can be fabricated with improved uniformity and manufacturability. A seven-record-site neural probe was formed by inductive-coupled plasma (ICP) dry etching of an SOI substrate. The thickness of the probe is 15 mu m. The shaft of the probe has dimensions of 3 mmx100 mu mx15 mu m with typical area of the record site of 78.5 mu m(2). The impedance of the record site was measured in-vitro. The typical impedance characteristics of the record sites are around 2 M Omega at 1 kHz. The performance of the neural probe in-vivo was tested on anesthetic rat. The recorded neural spike was typically around 140 mu V. Spike from individual site could exceed 700 mu V. The average signal noise ratio was 7 or more.

Fabrication of low-cost and high-reflectivity bottom mirrors for Si-based micro-cavity devices

A novel and simple way to prepare high-reflectivity bottom mirrors for Si-based micro-cavity devices is reported. The bottom mirror was deposited in the hole, which was etched from the backside of the sample by ethylenediamine-pyrocatechol-water solution with the buried Sio, layer in the silicon-on-insulator substrate as the etching-stop layer. The high-reflectivity of the bottom mirror deposited in the hole and the narrow hill width at half maximum of the cavity formed by this method both indicate the successful preparation of the bottom mirror for Si-based micro-cavity devices.

Optical properties of the E-0+Delta(0) energy level higher than the bandgap of GaAs studied by micro-photoluminescence technique

Using micro-photoluminescence technique, we observed a new photoluminescence peak about 0.348 eV above the bandgap of GaAs (E-0). By analyzing its optical characteristics, we assigned this peak to the nonequilibrium luminescence emission from the E-0 + Delta(0) bandgap in semi-insulated GaAs, which was further verified by Raman results. The observed polarization, excitation power dependence and temperature dependence of the photoluminescence spectra from the E-0 + Delta(0) energy level were very similar to those from the E-0 of GaAs. This mainly resulted from the common conduction band around Gamma(6) that was involved in the two optical transition processes, and indicated that the optical properties of bulk GaAs were mainly determined by the intrinsic properties of the conduction band. Our results demonstrated that the micro-photoluminescence technique is a powerful tool to investigate the high energy states above the fundamental bandgap in semiconductor materials.

The research and progress of micro-fabrication technologies of two-dimensional photonic crystal

The novel material of photonic crystal makes it possible to control a photon, and the photonic integration will have breakthrough progress due to the application of photonic crystal. It is based on the photonic crystal device that the photonic crystal integration could be realized. Therefore, we should first investigate photonic crystal devices based on the active and the passive semiconductor materials, which may have great potential application in photonic integration. The most practical and important method to fabricate two-dimensional photonic crystal is the micro-manufacture method. In this paper, we summarize and evaluate the fabrication methods of two-dimensional photonic crystal in near-infrared region, including electron beam lithography, selection of mask, dry etching, and some works of ours. This will be beneficial to the study of the photonic crystal in China.

Pressure behaviour of the UV and green emission bands in ZnO micro-rods

The pressure behavior of the ultraviolet (UV) and green emission bands in ZnO tetrapod-like micro-rods has been investigated at 300 and 70 K, respectively. The pressure coefficient of the UV band at 300 K is 24.5 meV/GPa, consistent with that of the band gap of bulk ZnO. However, the pressure coefficient of the green band is 25 meV/GPa, far larger than previous literature reports. The green band in this work originates from Cu-related emission, as confirmed by the fine structure observed in the spectra at 10 K. The pressure coefficients of four phonon replicas of the free exciton emission (FX) at 70 K are 21.0, 20.2, 19.8, and 19.3 meV/GPa, respectively. The energy shift rate of the FX emission and the LO phonon energies is then determined to be 21.4 and 0.55 meV/GPa. The pressure coefficient of the neutral donor bound exciton ((DX)-X-0) transition is 20.5 meV/GPa, only 4% smaller than that of FX. This confirms that the (DX)-X-0 emission corresponds to excitons bound to neutral shallow donors. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Comparison between double crystals X-ray diffraction micro-Raman measurement on composition determination of high Ge content Si1_xGex layer epitaxied on Si substrate

It is important to acquire the composition of Si1-xGex layer, especially that with high Ge content, epitaxied on Si substrate. Two nondestructive examination methods, double crystals X-ray diffraction (DCXRD) and micro-Raman measurement, were introduced comparatively to determine x value in Si1-xGex: layer, which show that while the two methods are consistent with each other when x is low, the results obtained from double crystals X-ray diffraction are not credible due to the large strain relaxation occurring in Si1-xGex layers when Ge content is higher than about 20%. Micro-Raman measurement is more appropriate for determining high Ge content than DCXRD.

Micro-mould method for self-assembling three-dimensional opal photonic crystals

By vertical sedimentation, silica micro-spheres were grown in different shapes of concave micro-zones which were etched on a (100) p-silicon substrate. The following were found: this method can effectively raise the quality of films by avoiding cracks; the geometry of the micro-zones affects the sediment of the film; regular hexagons and triangles best facilitate the growth of photonic crystals. This method is practical for its ability to fabricate self-assembly photonic crystals in previously designed small areas.

Optical properties of semiconductor quantum-well material using photonic crystal fabricated by micro-fabrication machine

Two-dimensional photonic crystals in near infrared region were fabricated by using the focused ion beam ( FIB) method and the method of electron-beam lithography (EBL) combined with dry etching. Both methods can fabricate perfect crystals, the method of FIB is simple,the other is more complicated. It is shown that the material with the photonic crystal fabricated by FIB has no fluorescence,on the other hand, the small-lattice photonic crystal made by EBL combined with dry etching can enhance the extraction efficiency two folds, though the photonic crystal has some disorder. The mechanisms of the enhanced-emission and the absence of emission are also discussed.

The micro-magnetic structures of Mn+ ion-implanted GaSb

The micro-magnetic structures of Mn+ ion-implanted GaSb are studied using a magnetic force microscope (MFM). MFM images reveal that there are many magnetic domains with different magnetization directions in our samples. The magnetic domain structures and the magnetization direction of typical MFM patterns are analyzed by numeric simulation.

Micro-Raman study on hydrogenated protocrystalline silicon films

Good quality hydrogenated protocrystalline silicon films were successfully prepared by radio frequency plasma enhanced chemical vapor deposition (PECVD) with various hydrogen dilution ratios (R = ([H-2]/[SiH4]) from 10 to 100). The photosensitivity of the films is up to 10(6) under the light intensity of 50mW.cm(-2). The microstructure of the films was studied by micro-region Raman scattering spectra at room temperature. The deconvolution of the Raman spectra by Gaussion functions shows that the films deposited under low hydrogen dilution ratios (R < 33) exhibit typical amorphous properties, while the films deposited under high hydrogen dilution ratios (R > 50) possess a diphasic structure, with increasing crystalline volume fraction with R. The size of the crystallites in the diphasic films is about 2.4 mm, which was deduced from the phonon confinement model. The intermediate range order of the silicon film increases with increasing hydrogen dilution ratio.

Analysis and numerical simulation of eigenmode characteristics for semiconductor lasers with an equilateral triangle micro-resonator

The eigenmodes confined in the equilateral triangle resonator (ETR) are analyzed by deriving the eigenvalues and the mode field distributions and by the finite difference time domain (FDTD) technique. The analytical results show that the one-period-length for the mode light rays inside the ETR is the perimeter of the ETR, and the number of transverse modes is limited by the condition of total internal reflection. In addition, the sum of the longitudinal mode index and the transverse mode index should be an even number, which limits the number of confined modes again. Based on the FDTD technique and the Pade approximation, we calculate the mode resonant frequencies and the quality factors from the local maximum and the width of the spectral distribution of the intensity The numerical results of mode frequencies agree very well with the analytical results, and the quality factor of the fundamental mode is usually higher than that of the higher order transverse modes. The results show that the ETR is suitable to realize single-made operation as semiconductor microcavity lasers.

Polarization-Independent Micro-Ring Resonator on Silicon-on-Insulator

Polarization-independent laterally-coupled micro-ring resonator has been designed and demonstrated. The origin of the polarization-sensitivity of the photonic wire waveguide (PWW) was analyzed. A polarization-insensitive PWW structure was designed and a polarization-insensitive MRR based on this PWW structure was designed by finite difference time-domain method and was fabricated on an 8-inch silicon-on-insulator wafer. The offset between the resonant wavelengths of the quasi-TE mode and the quasi-TM mode is smaller than 0.15 nm. The FSR is about 17 nm, extinction ratio about 10 dB and Q about 620.

Optimized design on high-power GaN-based Micro-LEDs - art. no. 684108

The structure of micro-LEDs was optimized designed. Optical, electrical and thermal characteristics of micro-LEDs were improved. The optimized design make micro-LEDs suitable for high-power device. The light extraction efficiency of micro-LEDs was analyzed by the means of ray tracing. The results shows that increasing the inclination angle of sidewall and height of mesa, and reducing the absorption of p and n electrode can enhance the light extraction efficiency of micro-LEDs. Furthermore, the total light output power can be boosted by increasing the density of micro-structures on the device. The high-power flip-chip micro-LEDs were fabricated, which has higher quantum efficiency than conventional BALED's. When the number of microstructure in micro-LEDs was increased by 57%, the light output power was enhanced 24%. Light output power is 82.88mW at the current of 350mA and saturation current is up to 800mA, all of these are better than BALED which was fabricated in the same epitaxial wafer. The IN characteristics of micro-LEDs are almost identical to BALED.

Subretinal implantable micro photodetector array

A subretinal implant device, Micro Photo Diode Array, which can partly imitate the function of photoreceptor cells, was presented. Process to fabricate the MPDA and characteristics of the MPDA in vivo were described.

Multi channel micro neural probe fabricated with SOI

Extracellular neural recording requires neural probes having more recording sites as well as limited volumes. With its mechanical characteristic and abundant process method, Silicon is a kind of material fit for producing neural probe. Silicon on insulator (SOI) is adopted in this paper to fabricate neural probes. The uniformity and manufacturability are improved. The fabricating process and testing results of a series of Multi channel micro neural probes were reported. The thickness of the probe is 15 mu m-30 mu m. The typical impedance characteristics of the record sites are around 2M Omega at 1k Hz. The performance of the neural probe in-vivo was tested on anesthetic rat. The recorded neural spike was typically around 140 mu V. Spike recorded from individual site could exceed 700 mu V. The average signal noise ratio was 7 or more.