Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions

Illustrated in this paper are two examples of altering planar growth into self-assembled island formation by adapting experimental conditions. Partial oxidation, undersaturated solution and high temperature change Frank-Van der Merwe (FM) growth of Al0.3Ga0.7As in liquid phase epitaxy (LPE) into isolated island deposition. Low growth speed, high temperature and in situ annealing in molecular beam epitaxy (MBE) cause the origination of InAs/GaAs quantum dots (QDs) to happen while the film is still below critical thickness in Stranski-Krastanow (SK) mode. Sample morphologies are characterized by scanning electron microscopy (SEM) or atomic force microscopy (AFM). It is suggested that such achievements are of value not only to fundamental researches but also to spheres of device applications as well. (c) 2004 Elsevier B.V. All rights reserved.

Excitonic photoluminescence properties of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica films

The GaSb and Ga0.62In0.38Sb nanocrystals were embedded in the SiO2 films by radio-frequency magnetron co-sputtering and were grown on GaSb and Si substrates at different temperatures. We present results on the 10K excitonic photoluminescence (PL) properties of nanocrystalline GaSb and Ga0.62In0.38Sb as a function of their size. The measurements show that the PL of the GaSb and Ga0.62In0.38Sb nanocrystallites follows the quantum confinement model very closely. By using deconvolution of PL spectra, origins of structures in PL were identified. (C) 2002 Elsevier Science B.V. All rights reserved.

Micro-fabricated Al0.3Ga0.7As pyramids for potential SPM applications

A novel technique of manufacturing Al0.3Ga0.7As pyramids by liquid phase epitaxy (LPE) for scanning probe microscopy (SPM) sensors is reported Four meticulously designed conditions-partial oxidation, deficient solute, air quenching and germanium doping result in defect-free homogeneous nucleation and subsequent pyramid formation. Micrometer-sized frustums and pyramids are detected by scanning electron microscopy (SEM). The sharp end of the microtip has a radius of curvature smaller than 50 nm. It is believed that such accomplishments would contribute not only to crystal growth theory, but also to miniature fabrication technology.

FIELD-EFFECT ON THERMAL EMISSION FROM THE 0.40 EV ELECTRON LEVEL IN INGAP

Results are reported of electric-field dependence on thermal emission of electrons from the 0.40 eV level at various temperatures in InGaP by means of deep-level transient spectroscopy. The data are analyzed according to the Poole-Frankel emission from the potentials which are assumed to be Coulombic, square well, and Gaussian, respectively. The emission mte from this level is strongly field dependent. It is found that the Gaussian potential model is more reasonable to describe the phosphorus-vacancy-induced potential in InGaP than the Coulombic and square-well ones.

EXTREMELY LOW THRESHOLD CURRENT, BURIED-HETEROSTRUCTURE STRAINED INGAAS GAAS MULTIQUANTUM WELL LASERS

A very low CW threshold current of 1.65 mA at room temperature was obtained for an uncoated buried-heterostructure strained layer multiquantum well InGaAs-GaAs laser fabricated using hybrid molecular beam epitaxy and liquid phase epitaxy crystal growth technique. External differential quantum efficiency as high as 44.6% (0.53 mW/mA) and output power of more than 30 mW per facet were achieved in the same laser.

High efficiency AlxGa1-xAs/GaAs solar cells: Fabrication, irradiation and annealing effect

High efficiency AlxGa1-xAs/GaAs heteroface solar cells have been fabricated by an improved multi-wafer squeezing graphite boat liquid phase epitaxy (LPE) technique, which enables simultaneous growth of twenty 2.3 X 2.3cm(2) epilayers in one run. A total area conversion efficiency of 17.33% is exhibited (1sun, AM0, 2.0 x 2.0cm(2)). The shallow junction cell shows more resistance to 1 MeV electron radiation than the deep one. After isochronal or isothermal annealing the density and the number of deep level traps induced by irradiation are reduced effectively for the solar cells with deep junction and bombardment under high electron fluences.

Structure and device characteristics of AlxGa1-xAs/GaAs solar cells

AlGa1-xAs/GaAs heterostructures have been grown by two different liquid phase epitaxy (LPE) modes, i.e. the supercooled and melt-etch methods, for the fabrication of highly efficient solar cells. Typical structural characteristics observed under a transmission electron microscope (TEM), an Auger energy spectrometer (AES) and corresponding device parameters were presented. The results indicated that the P+PNN+ configuration grown by the melt-etch method could be used to produce high performance, large area solar cells with effectively reducing the defects of the substrate and improving the minority carrier collection by forming a compositionally graded region in the window layer.

The kinetic-theory for dilute solid liquid 2-phase flow

On the basis of a brief review of the continuum theory for macroscopic descriptions and the kinetic theory for microscopic descriptions in solid/liquid two-phase flows, some suggestions are presented, i.e. the solid phase may be described by the Boltzmann equation and the liquid phase still be described by conservation laws in the continuum theory. Among them the action force on the particles by the liquid fluid is a coupling factor which connects the phases. For dilute steady solid/liquid two-phase flows, the particle velocity distribution function can be derived by analogy with the procedures in the kinetic theory of gas molecules for the equilibrium state instead of being assumed, as previous investigators did. This done, more detailed information, such as the velocity probability density distribution, mean velocity distribution and fluctuating intensity etc. can be obtained directly from the particle velocity distribution function or from its integration. Experiments have been performed for dilute solid/liquid two-phase flow in a 4 x 6 cm2 sized circulating square pipe system by means of laser Doppler anemometry so that the theories can be examined. The comparisons show that the theories agree very well with all the measured data.

Studies on two-phase co-current air/non-Newtonian shear-thinning fluid flows in inclined smooth pipes

In this work. co-current flow characteristics of air/non-Newtonian liquid systems in inclined smooth pipes are studied experimentally and theoretically using transparent tubes of 20, 40 and 60 turn in diameter. Each tube includes two 10 m lone pipe branches connected by a U-bend that is capable of being inclined to any angle, from a completely horizontal to a fully vertical position. The flow rate of each phase is varied over a wide range. The studied flow phenomena are bubbly, plug flow, slug flow, churn flow and annular flow. These are observed and recorded by a high flow. stratified flow. -speed camera over a wide range of operating conditions. The effects of the liquid phase properties, the inclination angle and the pipe diameter on two-phase flow characteristics are systematically studied. The Heywood-Charles model for horizontal flow was modified to accommodate stratified flow in inclined pipes, taking into account the average void fraction and pressure drop of the mixture flow of a gas/non-Newtonian liquid. The pressure drop gradient model of Taitel and Barnea for a gas/Newtonian liquid slug flow was extended to include liquids possessing shear-thinning flow behaviour in inclined pipes. The comparison of the predicted values with the experimental data shows that the models presented here provide a reasonable estimate of the average void fraction and the corresponding pressure drop for the mixture flow of a gas/ non-Newtonian liquid. (C) 2007 Elsevier Ltd. All rights reserved.

Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy

ZnTe epilayers were grown on GaAs(0 0 1) substrates by molecular beam epitaxy (MBE) at different VI/II beam equivalent pressure (BEP) ratios (R-VI/II) in a wide range of 0.96-11 with constant Zn flux. Based on in situ reflection high-energy electron diffraction (RHEED) observation, two-dimensional (2D) growth mode can be formed by increasing the R-VI/II to 2.8. The Te/Zn pressure ratios lower than 4.0 correspond to Zn-rich growth state, while the ratios over 6.4 correspond to Te-rich one. The Zn sticking coefficient at various VI/II ratios are derived by the growth rate measurement. The ZnTe epilayer grown at a R-VI/II of 6.4 displays the narrowest full-width at half-maximum (FWHM) of double-crystal X-ray rocking curve (DCXRC) for (0 0 4) reflection. Atomic force microscopy (AFM) characterization shows that the grain size enlarges drastically with the R-VI/II. The surface root-mean-square (RMS) roughness decreases firstly, attains a minimum of 1.14 nm at a R-VI/II of 4.0 and then increases at higher ratios. It is suggested that the most suitable R-VI/II be controlled between 4.0 and 6.4 in order to grow high-quality ZnTe epitaxial thin films.

Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers

GaSb films with AlSb/GaSb compound buffer layers were grown by molecular beam epitaxy on GaAs (001) substrates. The crystal quality and optical properties were studied by high resolution transition electron microscopy and low temperature photoluminescence spectra (PL), respectively. It was found that the AlSb/GaSb compound buffer layers can restrict the dislocations into GaSb epilayers. The intensity of PL spectra of GaSb layer becomes large with the increasing the periods of AlSb/GaSb superlattices, indicating that the optical quality of GaSb films is improved.

COMPARISON OF PROPERTIES OF SOLID-PHASE EPITAXIAL SILICON-ON-SAPPHIRE FILMS RECRYSTALLIZED BY RAPID THERMAL ANNEALING AND FURNACE ANNEALING

Chemically vapour deposited silicon on sapphire (SOS) films 0.25 mu m thick were implanted with Si-28(+) and recrystallized in solid phase by furnace annealing (FA) and IR rapid thermal annealing (RTA) in our laboratory. An improvement in crystalline quality can be obtained using both annealing procedures. After FA, it is hard to retain the intrinsic high resistivity value(10(4)-10(5) Ohm cm) observed in as-grown SOS films, so the improvement process cannot be put to practical use effectively. However, it is demonstrated that by properly adjusting the implantation and RTA conditions, significant improvements in both film quality and film autodoping can be accomplished. This work describes a modified double solid phase epitaxy process in which the intrinsic high resistivities of the as grown SOS films are retained. The mechanism of suppression of Al autodoping is discussed.

Calorimetric study on two biphenyl liquid crystals

The molar heat capacities of the two biphenyl liquid crystals, 3BmFF and 3BmFFXF3, with a purity of 99.7 mol% have been precisely measured by a fully automated precision adiabatic calorimeter in the temperature range between T = 80 and 350 K. Nematic phase-liquid phase transitions were found between T = 297 K and 300 K with a peak temperature of T-peak = (298.071 +/- 0.089) K for 3BmFF, and between T = 316 and 319 K with a peak temperature of T-peak = (315.543 +/- 0.043) K for 3BmFFXF3. The molar enthalpy (Delta(trs)H(m)) and entropy (Delta(trs)S(m)) corresponding to these phase transitions have been determined by means of the analysis of the heat capacity curves, which are (15.261 +/- 0.023) U mol(-1) and (51.202 +/- 0.076) J K-1 mol(-1) for 3BmFF, (31.624 +/- 0.066) kJ mol(-1) and (100.249 +/- 0.212) J K-1 mol(-1) for 3BmFFXF3, respectively. The real melting points (TI) and the ideal melting points (TO) with no impurities of the two compounds have been obtained from the fractional melting method to be (298.056 +/- 0.018) K and (298.165 +/- 0.038) K for 3BmFF, (315.585 +/- 0.043) K and (315.661 +/- 0.044) K for 3BmFFXF3, respectively. In addition, the transitions of these two biphenyl liquid crystals from nematic phase to liquid phase have further been investigated by differential scanning calorimeter (DSC) technique; the repeatability and reliability for these phase transitions were verified. (C) 2004 Elsevier B.V. All rights reserved.

One-Step Ionic Liquid-Assisted Electrochemical Synthesis of Ionic Liquid-Functionalized Graphene Sheet Directly from Graphite

Graphite, inexpensive and available in large quantities, unfortunately does not readily exfoliate to yield individual graphene sheets. Here a mild, one-step electrochemical approach for the preparation of ionic-liquid-functionalized graphite sheets with the assistance of an ionic liquid and water is presented. These ionic-liquid-treated graphite sheets can be exfoliated into functionalized graphene nanosheets that can not only be individuated and homogeneously distributed into polar aprotic solvents, but also need not be further deoxidized. Different types of ionic liquids and different ratios of the ionic liquid to water can influence the properties of the graphene nanosheets. Graphene nanosheet/polystyrene composites synthesized by a liquid-phase blend route exhibit a percolation threshold of 0.1 vol % for room temperature electrical conductivity, and, at only 4.19 vol %, this composite has a conductivity of 13.84 S m(-1), which is 3-15 times that of polystyrene composites filled with single-walled carbon nanotubes.

Molecular dynamics study on the phase diagrams of linear and branched chain molecules

The particle transfer molecular dynamics is used to study the phase equilibria of linear and branched chain molecules. The scaling of the critical temperature versus chain length is obtained and the critical densities are found to decrease with increasing chain length, which are in agreement with the results of experiment and theory. The phase diagrams of the linear and the branched chain molecules nearly overlap with each other. Moreover, the radial distribution functions of linear and branched chain molecules in gas phase are very similar, but in the liquid phase, they are different for different kinds of chains.