FIELD-EFFECT ON THERMAL EMISSION FROM THE 0.40 EV ELECTRON LEVEL IN INGAP
Data(s) |
1993
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Resumo |
Results are reported of electric-field dependence on thermal emission of electrons from the 0.40 eV level at various temperatures in InGaP by means of deep-level transient spectroscopy. The data are analyzed according to the Poole-Frankel emission from the potentials which are assumed to be Coulombic, square well, and Gaussian, respectively. The emission mte from this level is strongly field dependent. It is found that the Gaussian potential model is more reasonable to describe the phosphorus-vacancy-induced potential in InGaP than the Coulombic and square-well ones. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
ZHU QS; HIRAMATSU K; SAWAKI N; AKASAKI I; LIU XN.FIELD-EFFECT ON THERMAL EMISSION FROM THE 0.40 EV ELECTRON LEVEL IN INGAP,JOURNAL OF APPLIED PHYSICS,1993,73(2):771-774 |
Palavras-Chave | #半导体材料 #LIQUID-PHASE EPITAXY #100 GAAS #TRANSIENT SPECTROSCOPY #OPTICAL-PROPERTIES #SEMICONDUCTORS #SILICON #VACANCY #DEFECTS #TRAPS |
Tipo |
期刊论文 |