FIELD-EFFECT ON THERMAL EMISSION FROM THE 0.40 EV ELECTRON LEVEL IN INGAP


Autoria(s): ZHU QS; HIRAMATSU K; SAWAKI N; AKASAKI I; LIU XN
Data(s)

1993

Resumo

Results are reported of electric-field dependence on thermal emission of electrons from the 0.40 eV level at various temperatures in InGaP by means of deep-level transient spectroscopy. The data are analyzed according to the Poole-Frankel emission from the potentials which are assumed to be Coulombic, square well, and Gaussian, respectively. The emission mte from this level is strongly field dependent. It is found that the Gaussian potential model is more reasonable to describe the phosphorus-vacancy-induced potential in InGaP than the Coulombic and square-well ones.

Identificador

http://ir.semi.ac.cn/handle/172111/14123

http://www.irgrid.ac.cn/handle/1471x/101096

Idioma(s)

英语

Fonte

ZHU QS; HIRAMATSU K; SAWAKI N; AKASAKI I; LIU XN.FIELD-EFFECT ON THERMAL EMISSION FROM THE 0.40 EV ELECTRON LEVEL IN INGAP,JOURNAL OF APPLIED PHYSICS,1993,73(2):771-774

Palavras-Chave #半导体材料 #LIQUID-PHASE EPITAXY #100 GAAS #TRANSIENT SPECTROSCOPY #OPTICAL-PROPERTIES #SEMICONDUCTORS #SILICON #VACANCY #DEFECTS #TRAPS
Tipo

期刊论文