Analytic expression of the diffraction of a circular aperture

Recurring to the characteristic of Bessel function, we give the analytic expression or the Fresnel diffraction by a circular aperture, thus the diffractions on the propagation axis and along the boundary of the geometrical shadow are discussed conveniently. Since it is difficult to embody intuitively the physical meaning from this series expression of the Fresnel diffraction, after weighing the diffractions on the axis and along the boundary of the geometrical shadow, we propose a simple approximate expression of the circular diffraction, which is equivalent to the rigorous solution in the further propagation distance. It is important for the measurement of the parameter or the beam, such as the quantitative analysis of the relationship of the wave error and the divergence of the beam, In this paper, the relationship of the fluctuation of the transverse diffraction profile and the position of the axial point is discussed too. (c) 2005 Elsevier GrnbH. All rights reserved.

Numerical simulation of wavefronts diffracted by apertures with circular symmetry

The numerical simulation of the wavefronts diffracted by apertures with circular symmetry is realized by a numerical method. It is based on the angular spectrum of plane waves, which ignored the vector nature of light. The on-axial irradiance distributions of plane wavefront and Gauss wavefront diffracted by the circular aperture have been calculated along the propagation direction. Comparisons of the simulation results with the analytical results and the experimental results tell us that it is a feasible method to calculate the diffraction of apertures. (c) 2006 Published by Elsevier GmbH.

Finite element analysis on a circular wedge prism with 400 mm diameter

The paper comprehensively analyzes the distortions of a circular wedge prism with 400 mm diameter in a scanner by method of optical-mechanical-thermal integrating analysis. The structure and intensity of the prism assembly is verified and checked, and the surface deformations of the prism under gravity load, as well as the thermo-elastic distortions of the prism, are analyzed in detail and evaluated, which is finally contrasted with the measured values of Zygo Mark interferometer. The results show: the maximal distortion of the prism assembly is 10 nm magnitude and the maximal stress is 0.441 Mpa, which has much tolerance to the precision requirement of structure and the admissible stress of material; the influence of heat effect on the surface deformations of prism is proved to be far greater than the influence of gravity load, so some strict temperature-controlled measures are to be considered when the scanner is used. (c) 2006 Elsevier GmbH. All rights reserved.

Circular photogalvanic effect at inter-band excitation in InN

The circular photogalvanic effect (CPGE) is observed in InN at inter-band excitation. The function of the CPGE induced current on laser helicity is experimentally demonstrated and illustrated with the microscopic model. A spin-dependent current obtained in InN is one order larger than in the AlGaN/GaN heterostructures at inter-band excitation. The dependence of CPGE current amplitude on light power and incident angle can be well evaluated with phenomenological theory. This sizeable spin-dependent current not only provides an opportunity to realize spin polarized current at room temperature, but also can be utilized as a reliable tool of spin splitting investigation in semiconductors. (c) 2007 Published by Elsevier Ltd.

Anomalous-circular photogalvanic effect in a GaAs/AlGaAs two-dimensional electron gas

We have studied the circular photogalvanic effect (CPGE) in a GaAs/AlGaAs two-dimensional electron gas excited by near infrared light at room temperature. The anomalous CPGE observed under normal incidence indicates a swirling current which is realized by a radial spin current via the reciprocal spin-Hall effect. The anomalous CPGE exhibits a cubic cosine dependence on the incidence angle, which is discussed in line with the above interpretation.

Lattice polarity detection of InN by circular photogalvanic effect

We report an effective and nondestructive method based on circular photogalvanic effect (CPGE) to detect the lattice polarity of InN. Because of the lattice inversion between In- and N-polar InN, the energy band spin splitting is opposite for InN films with different polarities. Consequently under light irradiation with the same helicity, CPGE photocurrents in In- and N-polar layers will have opposite directions, thus the polarity can be detected. This method is demonstrated by our CPGE measurements in both n- and p-type InN films.

Observation of the surface circular photogalvanic effect in InN films

A sizable spin-dependent photocurrent related to the interband transition in InN films is observed. The surface charge accumulation layer is suggested to be the origin of the circular photogalvanic current, which is consistent with the result of uniaxial strain experiments and the comparison of front and back incidence. The homogeneous photocurrent demonstrates the existence of spin splitting in the InN surface layer, and the structure inversion asymmetry (SIA)-dominant mechanism indicates a great possibility for the manipulation of spin splitting, which would undoubtedly benefit further research and applications of spintronics. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.

FBG pressure sensor based on the double shell cylinder with temperature compensation

A novel fiber Bragg grating (FBG) pressure sensor based on the double shell cylinder with temperature compensation is presented. in the sensing scheme, a sensing FBG is affixed in the tangential direction on the outer surface of the inner cylinder, and another FBG is affixed in the axial direction to compensate the temperature fluctuation. Based on the theory of elasticity, the theoretical analysis of the strain distribution of the sensing shell is presented. Experiments are carried out to test the performance of the sensor. A pressure sensitivity of 0.0937 nm/MPa has been achieved. The experimental results also demonstrate that the two FBGs have the same temperature sensitivity, which can be utilized to compensate the temperature induced wavelength shift during the pressure measurement. (C) 2008 Elsevier Ltd. All rights reserved.

Comparison of free spectral range and quality factor for two-dimensional square and circular microcavities

Free spectral range of whispering-gallery (WG)-like modes in a two-dimensional (2D) square microcavity is found to be twice that in a 2D circular microcavity. The quality factor of the WG-like mode with the low mode number in a 2D square microcavity, calculated by the finite-difference time-domain (FDTD) technique and the Pade approximation method, is found to exceed that of the WG mode in 2D circular microcavity with the same cavity dimension and close mode wavelength.

Circular photogalvanic effect of the two-dimensional electron gas in AlXGa1-XN/GaN heterostructures under uniaxial strain

The circular photogalvanic effect (CPGE) of the two-dimensional electron gas (2DEG) in Al0.25Ga0.75N/GaN heterostructures induced by infrared radiation has been investigated under uniaxial strain. The observed photocurrent consists of the superposition of the CPGE and the linear photogalvanic effect currents, both of which are up to 10(-2) nA. The amplitude of the CPGE current increases linearly with additional strain and is enhanced by 18.6% with a strain of 2.2x10(-3). Based on the experimental results, the contribution of bulk-inversion asymmetry (BIA) and structure-inversion asymmetry (SIA) spin splitting of the 2DEG to the CPGE current in the heterostructures is separated, and the ratio of SIA and BIA terms is estimated to be about 13.2, indicating that the SIA is the dominant mechanism to induce the k-linear spin splitting of the subbands in the triangular quantum well at AlxGa1-xN/GaN heterointerfaces. (C) 2007 American Institute of Physics.

Circular polarization of excitonic luminescence in CdTe quantum wells with excess electrons of different densities

The circular polarization of excitonic luminescence is studied in CdTe/Cd1-xMgxTe quantum wells with excess electrons of low density in an external magnetic field. It is observed that the circular polarization of X and X- emissions has opposite signs and is influenced by the excess electron density. If the electron density is relatively high so that the emission intensity of the negatively charged excitons X- is much stronger than that of the neutral excitons X, a stronger circular polarization degree of both X and X- emissions is observed. We find that the circular polarization of both X- and X emissions is caused by the spin polarization of the excess electrons due to the electron-spin-dependent nature of the formation of X-. If the electron density is relatively low and the emission intensity of X- is comparable to that of X, the circular polarization degree of X and X- emissions is considerably smaller. This fact is interpreted as due to a depolarization of the excess electron spins, which is induced by the spin relaxation of X-.

Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells

We report on the fabrication of circular waveguide photodetectors with a response near 1.3 mu m wavelength using SiGe/Si multiple quantum wells. The quantum efficiency of the circular waveguide photodetector is improved when compared with that of the rib waveguide photodetector in the same wavelength at 1.3 mu m The frequency response of the photodetectors is simulated. The emciency-bandwidth product of the circular waveguide photodetectors is improved correspondingly. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

Fabrication of luminescent Ge nanocrystals started from unlayered hydrogenated amorphous SiGe films or hydrogenated amorphous Si hydrogenated amorphous Ge multilayers

Nanocrystalline Ge embedded in SiOx matrix is fabricated by oxidizing hydrogenated amorphous Sice alloys or hydrogenated amorphous Si/hydrogenated amorphous Ge multilayers. The structures before and after oxidation are systematically investigated. Visible light emission was observed from both samples. The luminescence peak is located at 2.2 eV which is independent of the starting materials. Compared to the luminescence from unlayered samples, the photoluminescence spectrum from multilayered samples has a narrower band width, which can be attributed to the uniform size distribution. The light emission origin is also discussed briefly and a mechanism different from the quantum size effect is suggested.

Strong circular photogalvanic effect in ZnO epitaxial films

We report a strong circular photogalvanic effect (CPGE) in ZnO epitaxial films under interband excitation. It is observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.