Observation of the surface circular photogalvanic effect in InN films

A sizable spin-dependent photocurrent related to the interband transition in InN films is observed. The surface charge accumulation layer is suggested to be the origin of the circular photogalvanic current, which is consistent with the result of uniaxial strain experiments and the comparison of front and back incidence. The homogeneous photocurrent demonstrates the existence of spin splitting in the InN surface layer, and the structure inversion asymmetry (SIA)-dominant mechanism indicates a great possibility for the manipulation of spin splitting, which would undoubtedly benefit further research and applications of spintronics. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.

Special Funds for Major State Basic Research 2006CB604905 National Nature Science Foundation of China 60721063 608201060036073116062860776001Research Fund for the Doctoral Program of Higher Education of China 20050284004 973 projects 2006CB604908 2006CB921607 This work is supported by Special Funds for Major State Basic Research Project 973 (2006CB604905), Hi-tech ResearchProject, National Nature Science Foundation of China (60721063, 60820106003, 60731160628, 60776001), and the Research Fund for the Doctoral Program of Higher Education of China (20050284004). Chen is grateful for the support from the 973 projects (2006CB604908, 2006CB921607).