Lattice polarity detection of InN by circular photogalvanic effect
| Data(s) |
2009
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| Resumo |
We report an effective and nondestructive method based on circular photogalvanic effect (CPGE) to detect the lattice polarity of InN. Because of the lattice inversion between In- and N-polar InN, the energy band spin splitting is opposite for InN films with different polarities. Consequently under light irradiation with the same helicity, CPGE photocurrents in In- and N-polar layers will have opposite directions, thus the polarity can be detected. This method is demonstrated by our CPGE measurements in both n- and p-type InN films. National Natural Science Foundation of China 60806042 107740016073603360890193National Basic Research Program of China 2006CB604908 2006CB921607 Research Fund for Doctoral Program of Higher Education in China 200800011021 20060001018NSFC 60625402 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhang Q ; Wang XQ ; He XW ; Yin CM ; Xu FJ ; Shen B ; Chen YH ; Wang ZG ; Ishitani Y ; Yoshikawa A .Lattice polarity detection of InN by circular photogalvanic effect ,APPLIED PHYSICS LETTERS,2009 ,95(3):Art. No. 031902 |
| Palavras-Chave | #半导体物理 #III-V semiconductors #indium compounds #nondestructive testing #photoconductivity #radiation effects #semiconductor thin films #wide band gap semiconductors |
| Tipo |
期刊论文 |
