Circular photogalvanic effect of the two-dimensional electron gas in AlXGa1-XN/GaN heterostructures under uniaxial strain


Autoria(s): He XW; Shen B; Tang YQ; Tang N; Yin CM; Xu FJ; Yang ZJ; Zhang GY; Chen YH; Tang CG; Wang ZG
Data(s)

2007

Resumo

The circular photogalvanic effect (CPGE) of the two-dimensional electron gas (2DEG) in Al0.25Ga0.75N/GaN heterostructures induced by infrared radiation has been investigated under uniaxial strain. The observed photocurrent consists of the superposition of the CPGE and the linear photogalvanic effect currents, both of which are up to 10(-2) nA. The amplitude of the CPGE current increases linearly with additional strain and is enhanced by 18.6% with a strain of 2.2x10(-3). Based on the experimental results, the contribution of bulk-inversion asymmetry (BIA) and structure-inversion asymmetry (SIA) spin splitting of the 2DEG to the CPGE current in the heterostructures is separated, and the ratio of SIA and BIA terms is estimated to be about 13.2, indicating that the SIA is the dominant mechanism to induce the k-linear spin splitting of the subbands in the triangular quantum well at AlxGa1-xN/GaN heterointerfaces. (C) 2007 American Institute of Physics.

Identificador

http://ir.semi.ac.cn/handle/172111/9302

http://www.irgrid.ac.cn/handle/1471x/64063

Idioma(s)

英语

Fonte

He, XW (He, X. W.); Shen, B (Shen, B.); Tang, YQ (Tang, Y. Q.); Tang, N (Tang, N.); Yin, CM (Yin, C. M.); Xu, FJ (Xu, F. J.); Yang, ZJ (Yang, Z. J.); Zhang, GY (Zhang, G. Y.); Chen, YH (Chen, Y. H.); Tang, CG (Tang, C. G.); Wang, ZG (Wang, Z. G.) .Circular photogalvanic effect of the two-dimensional electron gas in AlXGa1-XN/GaN heterostructures under uniaxial strain ,APPLIED PHYSICS LETTERS,AUG 13 2007,91 (7):Art.No.071912

Palavras-Chave #半导体材料 #QUANTUM-WELLS
Tipo

期刊论文