Modeling the dynamics of Si wafer bonding during annealing

The bonding behavior of silicon wafers depends on activation energy for the formation of siloxane bonds. In this article we developed a quantitative model on the dynamics of silicon wafer bonding during annealing. Based on this model, a significant difference in the bonding behaviors is compared quantitatively between the native oxide bonding interface and the thermal oxide bonding interface. The results indicate that the bonding strength of the native oxide interface increases with temperature much more rapidly than that of the thermal oxide interface. (C) 2000 American Institute of Physics. [S0021-8979(00)05520-1].

High Q microring resonator in silicon-on-insulator rib waveguides - art. no. 68380J

A high quality (Q) factor microring resonator in silicon-on-insulator rib waveguides was fabricated by electron beam lithography, followed by inductively coupled plasma etching. The waveguide dimensions were scaled down to submicron, for a low bending loss and compactness. Experimentally, the resonator has been realized with a quality factor as high as 21,200, as well as a large extinction ratio 12.5dB at telecommunication wavelength near 1550nm. From the measured results, propagation loss in the rib waveguide is determined as low as 6.900/cm. This high Q microring resonator is expected to lead to high speed optical modulators and bio-sensing devices.

Si based quantum cascade structure: from energy band structures design to materials growth

In this paper, we propose an n-type vertical transition bound-to-continuum Ge/SiGe quantum cascade structure utilizing electronic quantum wells in the L and Gamma valleys of the Ge layers. The optical transition levels are located in the quantum wells in the L valley. The Gamma-L intervalley scattering is used to depopulate the lower level and inject the electrons into the upper level. We also show that high quality Si1-yGey pseudosubstrate is obtained by thermal annealing of Si1-xGex/Ge/Si structure. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Fabrication method of silicon nanostructures by anisotropic etching

A fabrication method of silicon nanostructures is presented. Silicon nanowire, shift-line structure and islands have been successfully fabricated on SOI wafer using e-beam lithography and anisotropic etching technique.

Diffractive Grating Based Out-of-Plane Coupling between Silicon Nanowire and Optical Fiber

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Analysis of leakage current in GaAs micro-solar cell arrays

The output characteristics of micro-solar cell arrays are analyzed on the basis of a modified model in which the shunt resistance between cell lines results in current leakage. The modification mainly consists of adding a shunt resistor network to the traditional model. The obtained results agree well with the reported experimental results. The calculation results demonstrate that leakage current in substrate affects seriously the performance of GaAs micro- solar cell arrays. The performance of arrays can be improved by reducing the number of cells per line. In addition, at a certain level of integration, an appropriate space occupancy rate of the single cell is recommended for ensuring high open circuit voltages, and it is more appropriate to set the rates at 80%-90% through the calculation.

Evaluating the effect of dislocation on the photovoltaic performance of metamorphic tandem solar cells

The photovoltaic conversion efficiency for monolithic GaInP/GaInAs/Ge triple-junction cell with various bandgap combination (300 suns, AM1.5d) was theoretically calculated. An impressive improvement on conversion efficiency was observed for a bandgap combination of 1.708, 1.194, and 0.67 eV. A theoretical investigation was carried out on the effect of dislocation on the metamorphic structure's efficiency by regarding dislocation as minority-carrier recombination center. The results showed that only when dislocation density was less than 1.6x10(6) cm(-2), can this metamorphic combination exhibit its efficiency advantage over the fully-matched combination. In addition, we also briefly evaluated the lattice misfit dependence of the dislocation density for a group of metamorphic triple-junction system, and used it as guidance for the choice of the proper cell structure.

Chemical Constituents from the Leaves and Stems of Schisandra lancifolia

A new nortriterpenoid, 20-hydroxymicrandilactone D (1) and a novel lignan glycoside, lancilignanside A (2) were isolated from leaves and stems of Schisandra lancifolia, together with three known nortriterpenoids (3—5) and nine known phenolics (6—14). The structures of new compounds 1 and 2 were determined by detailed analysis of their 1D and 2D NMR spectra, and chemical evidences. In addition, compounds 1—2, 6—7, and 9—11 showed anti-human immunodeficiency virus (HIV)-1 activities with 50% effective concentration (EC50) in the range of 3.0—99.0m g/ml. Compound 12 was not bioactive in this assay with EC50 more than 200m g/ml.

LIQUID-PHASE EPITAXY GROWTH AND PROPERTIES OF GAINASSB/ALGAASSB/GASB HETEROSTRUCTURES

The GaInAsSb/AlGaAsSb/GaSb heterostructures were grown by the liquid phase epitaxy (LPE) technique. The materials were characterized by means of optical microscopy, electroprobe microanalysis (EPMA), double-crystal X-ray diffraction, capacitance-voltage (C-V) and Van der Pauw measurments, infrared absorption spectra, photoluminescence and laser Raman scattering. The results show that the materials have fine surface morphology, low lattice mismatch and good homogeneity. Room-temperature light-emitting diodes with an emission wavelength of 2.2-mu-m were obtained by using the GaInAsSb/AlGaAsSb DH structures.

Growth of SiGe by D-UHV/CVD at Low Temperature

The temperature is a key factor for the quality of the SiGe alloy grown by D-UHV/CVD. In conventional conditions,the lowest temperature for SiGe growth is about 550℃. Generally, the pressure of the growth chamber is about 10~(-5) Pa when liquid nitrogen is introduced into the wall of the growth chamber with the flux of 6sccm of the disilane gas. We have succeeded in depositing SiGe films at much lower temperature using a novel method. It is about 10.2 Pa without liquid nitrogen, about 3 magnitudes higher than the traditional method,leading to much faster deposition rate. Without liquid nitrogen,the SiGe film and SiGe/Si superlattice are grown at 485℃. The DCXRD curves and TEM image show that the quality of the film is good. The experiments show that this method is efficient to deposit SiGe at low temperature.

Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing

Ge self-assembled quantum dots (SAQDs) are grown with a self-assembled UHV/CVD epitaxy system. Then,the as-grown Ge quantum dots are annealed by ArF excimer laser. In the ultra-shot laser pulse duration,～20ns, bulk diffusion is forbidden, and only surface diffusion occurs, resulting in a laser induced quantum dot (LIQD). The diameter of the LIQD is 20～25nm which is much smaller than the as-grown dot and the LIQD has a higher density of about 6 × 10~(10)cm~(-2). The surface morphology evolution is investigated by AFM.

Measurement of Cavity Loss and Quasi-Fermi-Level Separation for Fabry-Perot Semiconductor Lasers

A fitting process is used to measure the cavity loss and the quasi-Fermi-level separation for Fabry- Perot semiconductor lasers. From the amplified spontaneous emission (ASE) spectrum, the gain spectrum and single-pass ASE obtained by the Cassidy method are applied in the fitting process. For a 1550nm quantum well InGaAsP ridge waveguide laser, the cavity loss of about ～24cm~(-1) is obtained.

Mechanism of Wafer Bonding Process

国家自然科学基金

A model of dislocations at the interface of the bonded wafers

Wafer bonding is regardless of lattice mismatch in the integration of dissimilar semiconductor materials. This technology differs from the heteroepitaxy mainly in the mechanism of generating dislocations at the interface. A model of dislocations at the bonded interface is proposed in this paper. Edge-like dislocations, which most efficiently relax the strain, are predominant at the bonded interface. But the thermal stress associated with large thermal expansion misfit may drive dislocations away from the bonded interface upon cooling.