A model of dislocations at the interface of the bonded wafers
| Data(s) |
2000
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|---|---|
| Resumo |
Wafer bonding is regardless of lattice mismatch in the integration of dissimilar semiconductor materials. This technology differs from the heteroepitaxy mainly in the mechanism of generating dislocations at the interface. A model of dislocations at the bonded interface is proposed in this paper. Edge-like dislocations, which most efficiently relax the strain, are predominant at the bonded interface. But the thermal stress associated with large thermal expansion misfit may drive dislocations away from the bonded interface upon cooling. Wafer bonding is regardless of lattice mismatch in the integration of dissimilar semiconductor materials. This technology differs from the heteroepitaxy mainly in the mechanism of generating dislocations at the interface. A model of dislocations at the bonded interface is proposed in this paper. Edge-like dislocations, which most efficiently relax the strain, are predominant at the bonded interface. But the thermal stress associated with large thermal expansion misfit may drive dislocations away from the bonded interface upon cooling. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:36:52Z (GMT). No. of bitstreams: 1 2890.pdf: 77830 bytes, checksum: 367fb9c652706f2a4806a3c884108d78 (MD5) Previous issue date: 2000 China Opt & Optoelectr Manufacturers Assoc.; Chinese Phys Soc.; SPIE. Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China China Opt & Optoelectr Manufacturers Assoc.; Chinese Phys Soc.; SPIE. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
| Fonte |
Han WH; Yu JZ; Wang LC; Wei HZ; Zhang XF; Wang QM .A model of dislocations at the interface of the bonded wafers .见：SPIE-INT SOC OPTICAL ENGINEERING .OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2000,116-119 |
| Palavras-Chave | #光电子学 #wafer bonding #heteroepitaxy #lattice mismatch #edge-like dislocations #thermal stress #60 degrees dislocation lines #GAAS |
| Tipo |
会议论文 |
