Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells

We have studied exciton localization and delocalization effect in GaNAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL) and timeresolved PL measurements. Studied results suggest that, at low temperature and under a conventional CW excitation, measured PL spectra were dominated by localized exciton (LE) emission caused by potential fluctuations in GaNAs layer. However, under short pulse laser excitation, it is different. An extra high-energy PL peak comes out from GaNAs/GaAs QWs and dominates the PL spectra under high excitation and/or at high temperature. By investigation, we have attributed the new PL peak to the recombination of delocalized excitons in QWs. This recombination process competes with the localized exciton emission, which, we believe, constitutes the "S-shaped" temperature-dependent emission shift often reported in ternary nitrides of InGaN and AlGaN in the literature.

InGaAs/InAlAs多量子阱结构的量子限制Stark效应研究

通过吸收光电流谱的测量,观察到用国产MBE设备生长的与InP衬底晶格匹配的InGaAs/InAlAs多量子阱结构的量子限制Stark效应及其与光偏振方向有关的各向异性电吸收特性,报道了可用于波导型调制器制作的MQW样品材料的X射线双晶衍射结果,并用计算机模拟出与实测十分相似的曲线,得到了可靠的量子阱结构,证明样品材料具有优良的外延质量.利用等效无限深阱模型进行的理论计算表明,应考虑样品p-i-n结内建电场的影响,才能使算出的吸收边红移与实验值符合.

像势对量子阱中类氢杂质Stark效应的影响

在考虑像势影响的情况下,利用变分方法计算了垂直电场下量子阱中类氢杂质的结合能,给出了像势引起的结合能增量随阱宽、杂质位置和电场的变化曲线.结果表明:考虑像势对量子阱中类氢杂质结合能及其Stark效应的影响是很必要的,而且自像势和互像势对类氢杂质结合能Stark效应的影响是相反的.

InGaAs/GaAs应变层短周期超晶格的Wannier-Stark效应

于2010-11-23批量导入

GaAs/GaAlAs超晶格的Wannier Stark效应

国家自然科学基金

GaAs/GaAlAs量子限制Stark效应及自电光双稳现象的实验研究

国家自然科学基金

Mechanism on exciton-mediated energy transfer in erbium-doped silicon

Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is related to optically active Er concentration, lifetime of excited Er3+ ion and spontaneous emission. The thermal quenching of the Er luminescence in Si is caused by thermal ionization of Er-bound exciton complex and nonradiative energy back-transfer processes, which correspond to the activation energy of 6.6 and 47.4 meV, respectively. Er doping in silicon introduces donor states, a large enhancement in the electrical activation of Er (up to two orders of magnitude) is obtained by co-implanting Er with O. It appears that the donor states are the gateway to the optically active Er. (C) 2000 Elsevier Science B.V. All rights reserved.

Selecting ionization path by dynamic stark shift with strong laser pulse

Multiphoton ionization of NO via intermediate Rydberg states with ultra-short laser pulses is investigated with time-resolved photoelectron spectroscopy in combination with fermosecond pump-probe technology. The Rydberg states of NO, which are characterized by obvious ac-Stark shift in ultra-strong laser field, can be tuned in resonance to ionize NO molecule at one's will with identical laser pulses, i.e., one can 'select' resonance path to ionization. The results shown in this Letter demonstrate that the states holding notable dynamic Stark shift provide us another dimension to chemical control with strong laser field. (C) 2003 Elsevier Science B.V. All rights reserved.

A multifunctional iridium carbazolyl orange phosphor for high performance two-element WOLED exploiting exciton-managed fluorescence/phosphorescence

By attaching a bulky, inductively electron-with drawing trifluoromethyl (CF3) group on the pyridyl ring of the rigid 2-[3(N-phenylcarbazolyl)]pyridine cyclometalated ligand, we successfully synthesized a new heteroleptic orange-emitting phosphorescent iridium(III) complex [Ir(L-1)(2)(acac)] 1 (HL1=5-trifluoromethyl-2-[3-(N-phenylcarbazolyl)]pyridine, Hacac = acetylacetone) in good yield.

A Dithienylbenzothiadiazole Pure Red Molecular Emitter with Electron Transport and Exciton Self-Confinement for Nondoped Organic Red-Light-Emitting Diodes

An amorphous photoluminescent material based on a dithienylbenzothiadiazole structure has been used for the fabrication of organic red-light-emitting diodes. The synergistic effects of the electron-transport ability and exciton confinement of the emitting material allow for the fabrication of efficient pure-red-light-emitting devices without a hole blocker.

Luminescent Boron-Contained Ladder-Type pi-Conjugated Compounds

Four diboron-contained ladder-type pi-conjugated compounds 1-4 were designed and synthesized. Their thermal, photophysical, electrochemical properties, as well as density functional theory calculations, were fully investigated. The single crystals of compounds 1 and 3 were grown, and their crystal structures were determined by X-ray diffraction analysis. Both compounds have a ladder-type g-conjugated framework. Compounds I and 2 possess high thermal stabilities, moderate solid-state fluorescence quantum yields, as well as stable redox properties, indicating that they are possible candidates for emitters and charge-transporting materials in electroluminescent (EL) devices. The double-layer device with the configuration of [ITO/NPB (40 nm)/1 or 2 (70 nm)/LiF (0.5 nm)/Al (200 nm)] exhibited good EL performance with the maximum brightness exceeding 8000 cd/m(2).