Luminescent Boron-Contained Ladder-Type pi-Conjugated Compounds


Autoria(s): Zhang ZL; Bi H; Zhang Y; Yao DD; Gao HZ; Fan Y; Zhang HY; Wang Y; Wang YP; Chen ZY; Ma DG
Data(s)

2009

Resumo

Four diboron-contained ladder-type pi-conjugated compounds 1-4 were designed and synthesized. Their thermal, photophysical, electrochemical properties, as well as density functional theory calculations, were fully investigated. The single crystals of compounds 1 and 3 were grown, and their crystal structures were determined by X-ray diffraction analysis. Both compounds have a ladder-type g-conjugated framework. Compounds I and 2 possess high thermal stabilities, moderate solid-state fluorescence quantum yields, as well as stable redox properties, indicating that they are possible candidates for emitters and charge-transporting materials in electroluminescent (EL) devices. The double-layer device with the configuration of [ITO/NPB (40 nm)/1 or 2 (70 nm)/LiF (0.5 nm)/Al (200 nm)] exhibited good EL performance with the maximum brightness exceeding 8000 cd/m(2).

Identificador

http://202.98.16.49/handle/322003/12335

http://www.irgrid.ac.cn/handle/1471x/148580

Idioma(s)

英语

Fonte

Zhang ZL;Bi H;Zhang Y;Yao DD;Gao HZ;Fan Y;Zhang HY;Wang Y;Wang YP;Chen ZY;Ma DG.Luminescent Boron-Contained Ladder-Type pi-Conjugated Compounds,INORGANIC CHEMISTRY ,2009,48(15 ):7230-7236

Palavras-Chave #FIELD-EFFECT TRANSISTORS #ELECTROLUMINESCENT PROPERTIES #ORGANIC SEMICONDUCTOR #OPTICAL-PROPERTIES #DOUBLE CYCLIZATION #COMPLEXES #SILICON #B(III) #ROUTE #LAYER
Tipo

期刊论文