215 resultados para Crystal Structure, Supramolecular, Single-Crystal X-Ray Study


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The crystal structure of the title complex salt has been determined by single-crystal X-ray structure analysis. The crystal data areas follows; Monoclinic, P2(1)/c, a=15.6480(10)Angstrom, b=16.7870(10)Angstrom, c=10.347(2)Angstrom, beta=90.790(10), V=2717.7(6)Angstrom(3), Z=3, and R=0.0333 for 4789 unique reflections. The complex anion has a pseudo-octahedral structure distorted more than the Cr-III and Co-III analogs, in which each, iminodiacetato ligand (ida(2-)) is coordinated in a facial fashion with the two N atoms in a cis configuration, resulting in an unsym-fac structure.

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The crystal structure of the title compound has been determined from single crystal X-ray diffraction. The complex crystallizes in the triclinic space group P1 with Z=2. Lattice parameters are: a = 0.7296(1), b = 1.0110(3), c = 1.2814(4) nm; alpha = 90.84(2), beta = 101.17(2), gamma = 92.52(2)-degrees. Intensity data were collected on a Nicolet R3M/E four-circle diffractometer using MoK alpha (lambda = 0.071073 nm) radiation. The structure was solved by Patterson and Fourier techniques and refined by least-squares techniques to R = 0.065. The structure of the complex consists of tetrahedral ZnCl42- anions which form a two-dimensional sheets. Tetrahedral ZnCl42- anions are sandwiched between two hydrocarbon layers which consist of [NH3(CH2)10NH3]2+ cations. Each [NH3(CH2)10NH3]2+ group is in a gauche bond between C atoms near NH3 polar heads.

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The crystal structure of the title compound was determined from single crystal X-ray diffraction at -90-degrees-C. The complex crystallizes in the tetragonal P4/mnc, Z = 2, a = 12.515(3), c = 17.636(7) angstrom. The structure was solved by Patterson and Fourier techniques and refined by least-squares to R = 0.061 for 788 reflections. The central PO4 is disordered, P-O = 1.54 angstrom, M(M = Mo or V) is 6-coordinate, M-O = 1.62-2.48 angstrom, K is 7-coordinate, K-O = 2.84-3.10 angstrom.

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A new eremophilenolide 1beta, 10beta-epoxy-6beta-acetoxy-3beta-angeloyloxy-8beta-hydrox y-eremophil-7(11)-en-8, 12alpha-olide (1), together with liguhodgsonal (2), esculetin (3) and beta-sitosterol (4), was isolated from the aerial parts of Ligularia sagitta. The structure of the new constituent (1) was elucidated by spectroscopic methods and confirmed by single-crystal X-ray diffraction.

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A study on the layer structure of W/C multilayers deposited by magnetron sputtering is reported. In the study, soft x-ray resonant reflectivity and hard x-ray grazing incidence reflectivity of the W/C multilayers were measured. The imperfections at the interface such as interdiffusion and formation of compounds were dealt with by two methods. On analyzing the experimental results, we found that the incorporation of an interlayer was a more suitable method than the traditional statistical method to describe the layer structure of a W/C system we fabricated. The optical constants of each layer at a wavelength of 4.48 nm were also obtained from the analysis. Copyright (C) 2008 John Wiley & Sons, Ltd.

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A Ge/Si(0 0 1) multilayer structure is investigated by cross-sectional transmission electron microscopy, atomic force microscopy and double crystal X-lay diffraction. We find that the multilayer-structure-related satellite peaks in the rocking curve exhibit a similar nonuniform broadening and rye fit the zero-order peak with two Lorentz lineshapes. The ratio of the integrated intensity of two peaks is approximately equal with the anal ratio of the top Ge layer deposited between the areas that are and are not occupied by islands. It proves the existence of vertical-aligned island columns from the viewpoint of macroscopic dimension. (C) 2001 Elsevier Science B.V. All rights reserved.

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An X-ray diffraction method, estimating the strain relaxation in an ultrathin layer, has been discussed by using kinematic and dynamical X-ray diffraction (XRD) theory. The characteristic parameter Delta Omega, used as the criterion of the strain relaxation in ultrathin layers, is deduced theoretically. It reveals that Delta Omega should be independent of the layer thickness in a coherently strained layer. By this method, we characterized our ultrathin GaNxAs1-x samples with N contents up to 5%. XRD measurements show that our GaNxAs1-x layers are coherently strained on GaAs even for such a large amount of N. Furthermore, a series of GaNxAs1-x samples with same N contents but different layer thicknesses were also characterized. It was found that the critical thickness (L-c) of GaNAs in the GaAs/GaNAs/GaAs structures determined by XRD measurement was 10 times smaller than the theoretical predictions based on the Matthews and Blakeslee model. This result was also confirmed by in situ observation of reflection high-energy electron diffraction (RHEED) and photoluminescence (PL) measurements. RHEED observation showed that the growth mode of GaNAs layer changed from 2D- to 3D-mode as the layer thickness exceeded L-c. PL measurements showed that the optical properties of GaNAs layers deteriorated rapidly as the layer thickness exceeded L-c. (C) 2000 Elsevier Science B.V. All rights reserved.

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A high concentration of shallow donor defect is formed in P-diffused ZnO single crystals. X-ray photoelectron spectroscopy analysis indicates that P atom occupy different lattice site at different diffusion temperature. Nature of the donor defect has been discussed.

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GaAs epilayer films on Si substrates grown by molecular-beam epitaxy were investigated by the x-ray double-crystal diffraction method. The rocking curves were recorded for different diffraction vectors of samples. The results show that the unit-cell volumes of GaAs epilayers are smaller than that of the GaAs bulk material. The strained-layer superlattice buffer layer can improve the quality of the film, especially in the surface lamella. The parameter W' = W(expt)/(square-root \gamma-h\/gamma-0/sin 2-theta-B) is introduced to describe the quality of different depths of epilayers. As the x-ray incident angle is increased, W' also increases, that is, the quality of the film deteriorates with increasing penetration distance of the x-ray beam. Therefore, W' can be considered as a parameter that describes the degree of perfection of the epilayer along the depth below the surface. The cross-section transmission electron microscopy observations agree with the results of x-ray double-crystal diffraction.

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The wafer processing of Indium Phosphide (InP) is so important that it is getting more and more attentions. Lapping is a basic step just following the ingot cutting. In this paper, the influences of various processing parameters on the lapped wafer quality and lapping rate have been checked, the double-crystal X-ray diffraction results about lapped wafers also were presented here. According to the experimental results, the optimum lapping conditions have been obtained.

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Ultrathin single quantum well (about one monolayer) grown on GaAs(001) substrate with GaAs cap layer has been studied by high resolution x-ray diffractometer on a beamline of the Beijing Synchrotron Radiation Facility. The interference fringes on both sides of the GaAs(004) Bragg peak are asymmetric and a range of weak fringes in the higher angle side of the Bragg peak is observed. The simulated results by using the kinematical diffraction method shows that the weak fringe range appears in the higher angle side when the phase shift introduced by the single quantum well is very slightly smaller than m pi (m:integer), and vice versa. After introducing a reasonable model of single quantum well, the simulated pattern is in good agreement with the experiment. (C) 1996 American Institute of Physics.

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A supramolecular complex [Cu(phen)(2)H2O]{[Cu(phen)(H2O)](2)[C6AS]}center dot 2.5H(2)O (phen = 1,10'-phenanthroline and C6AS = p-sulfonatocalix[6]arene) has been synthesized under hydrothermal condition, and characterized by IR spectroscopy, TG analysis and single crystal X-ray diffraction. In the structure, unprecedented 1D ({[Cu(phen)(H2O)](2)[C(6)AS]}(2-))(n) coordination chains (exactly being belts) are stacked into some 2D layers by the pi center dot center dot center dot pi stacking interactions, which are further interconnected into a 3D extended structure by hydrogen bonding.

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A supramolecular complex Zn-2[Cl2H8N2](2)[C28H2OS4O16][H2O](17.7) (1), has been synthesized under hydrothermal conditions, and characterized by IR spectroscopy, TG and DTA analysis, and single crystal X-ray diffraction. Unprecedented (H2O)(10) water clusters consisting of cyclic pentamer (H2O)(5) and five dangling water molecules were observed in the lattice.

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Five new compounds of sulfonylcalix[4]arenetetrasulfonate (SC4AS), [H7Na(H2O)(3)(SC4AS)(phen)(5)](H2O)(11.9) (1), [H6Mn(H2O)(4)(SC4AS)(phen)(5)] (H2O)(12.7) (2), [Cu-4(SC4AS) (phen)(6)] (H2O)(4.5) (3), {[Cu (2)(SC4AS) (bpy)(2)][Cu(bpy)(2)(H2O)](2)} (H2O)(6.6) (4), and {[Zn-2(SC4AS) (phen)(2)][Zn(phen)(2)(H2O)(2)](2)} (H2O)(7) (5) (where phen 1,10-phenanthroline and bpy = 2,2'-bipyridine), were synthesized by a hydrothermal method and structurally determined by single crystal X-ray diffraction. The SC4AS ligand adopts partial cone conformation in compounds 1 and 2 and 1,2-alternate form in compounds 3-5. According to the structural analysis and density functional theory (DFT) calculations, we suggest that the metal can affect the conformation of SC4AS.

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A ternary supramolecular complex of [Ni(bipy)(2)(H2O)](4)(C8AS)center dot 17.6(H2O) (bipy=4,4'-dimethyl-2,2'-bipyridine and C8AS = p-sulfonatocalix[8]arene) has been synthesized by a hydrothermal method and characterized by FT-IR spectroscopy, TG-DTA analysis and single crystal X-ray diffraction. In the structure. the water-soluble p-sulfonatocalix[8]arene molecule adopts a double partial cone conformation and is coordinated by four nickel atoms each of which is bonded by two 4,4'-dimethyl-2,2'-bipyridine molecules and one water molecule at the same time. The tetranuclear Subunits are stacked into an extended 3D structure with 1D water-filled channels via hydrogen bonds and C-H center dot center dot center dot pi interactions.