Lapping technique of InP single crystal wafer


Autoria(s): Wei J; Lang LX
Data(s)

1997

Resumo

The wafer processing of Indium Phosphide (InP) is so important that it is getting more and more attentions. Lapping is a basic step just following the ingot cutting. In this paper, the influences of various processing parameters on the lapped wafer quality and lapping rate have been checked, the double-crystal X-ray diffraction results about lapped wafers also were presented here. According to the experimental results, the optimum lapping conditions have been obtained.

Identificador

http://ir.semi.ac.cn/handle/172111/15219

http://www.irgrid.ac.cn/handle/1471x/101504

Idioma(s)

英语

Fonte

Wei J; Lang LX .Lapping technique of InP single crystal wafer ,CRYSTAL RESEARCH AND TECHNOLOGY,1997,32(2):243-247

Palavras-Chave #半导体材料
Tipo

期刊论文