Study on Raman spectra of GaMnAs

Raman spectra of diluted magnetic semiconductor GaMnAs alloy were reported. The coupled plamon-LO-phonon ( CPLP) mode has LO-like polarization properties. With increasing Mn concentration, the CPLP mode shifts to low frequency. The hole density in the alloy was determined from the ratio of the intensity of the CPLP mode to that of the unscreened LO mode in the depletion layer. The hole density increases with the increase of the Mn composition. The Raman spectra of GaMnAs alloy were measured at different temperature. It is confirmed that the hole density in the alloy increases with the increase of the temperature.

Electron transport properties of MM-HEMT with varied channel indium contents

Transport properties of two-dimensional electron gas (2DEG) are crucial to metamorphic high-electron-mobility transistors (MM-HEMT). We have investigated the variations of subband electron mobility and concentration versus temperature from Shubnikov-de Hass oscillations., and variable temperature Hall measurements. The results indicate that the electrical performance is the best when the In content is 0.65 in the channel for MM-HEMT. When the In content exceeds 0.65, a large lattice mismatch will cause dislocations and result in the decrease of mobility and the fall of performance in materials and devices.

Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements

Shubnikov-de Haas measurements were carried out for In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures grown on GaAs substrates with different indium contents and/or different Si delta-doping concentrations. Zero-field (B-->0) spin splitting was found in samples with stronger conduction band bending in the InGaAs well. It was shown that the dominant spin splitting mechanism is attributed to the contribution by the Rashba term. We found that zero-field spin splitting not only occurs in the ground electron subband, but also in the first excited electron subband for a sample with Si delta-doping concentration of 6x10(12) cm(-2). We propose that this In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structure grown on GaAs may be a promising candidate spin-polarized field-effect transistors. (C) 2002 American Institute of Physics.

Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates

A Shubnikov-de Haas (SdH) oscillation measurement was performed on highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates at a temperature of 1.4 K. By analyzing the experimental data using fast Fourier transform, the electron densities and mobilities of more than one subband are obtained, and an obvious double-peak structure appears at high magnetic field in the Fourier spectrum. In comparing the results of SdH measurements, Hall measurements, and theoretical calculation, we found that this double-peak structure arises from spin splitting of the first-excited subband (i=1). Very close mobilities of 5859 and 5827 cm(2)/V s are deduced from this double-peak structure. The sum of the carrier concentration of all the subbands in the quantum well is only 3.95x10(12) cm(-2) due to incomplete transfer of the electrons from the Si delta -doped layer to the well. (C) 2001 American Institute of Physics.

Longitudinal optic phonon-plasmon coupling in delta-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates

InAlAs/InGaAs metamorphic high-electron-mobility transistor structures with different spacer layers on GaAs substrates are characterized by Raman measurements. The influence of In0.52Al0.48As spacer thickness on longitudinal optic phonon-plasmon coupling is investigated. It is found that the intensity of GaAs-like longitudinal optic phonon, which couples with collective intersubband transitions of two-dimensional electron gas, is strongly affected by the different subband energy spacings, subband electron concentrations, and wave function distributions, which are determined by different spacer thicknesses. (C) 2001 American Institute of Physics.

Hard magnetic properties of Sm3Fe26.7VxN4 and Sm3Fe26.7VxCy

Sm3Fe26.7V2.3N4 nitrides and Sm3Fe26.7V2.3Cy carbides have been synthesized by gas-solid phase reaction. Their hard magnetic properties have been investigated by means of additional ball-milling at room temperature. The saturation magnetization of Sm3Fe26.7V2.3N4 almost decreases linearly with increasing ball-milling time t, but that of Sm3Fe26.7V2.3Cy has no obvious change when the ball-milling time increases from t = 1 to 28 h. As a preliminary result, the maximum remanence B-r of 0.94 and 0.88 T, the coercivity mu(0i)H(C) of 0.75 and 0.25 T, and the maximum energy product (BH) of 108.5 and 39.1 kJ/m(3) for their resin-bonded permanent magnets are achieved, respectively, by ball-milling at 293 K. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

Hydrogenation and anisotropic expansions in R3Fe29-xTx (R = Y, Ce, Nd, Sm, Gd, Tb and Dy; T = V and Cr)

A systematic study of the phase formation, structure and magnetic properties of the R3Fe29-xTx compounds (R=Y, Ce, Nd, Sm, Gd, Tb, and Dy; T=V and Cr) has been performed upon hydrogenation. The lattice constants and the unit cell volume of R3Fe29-xTxHy decrease with increasing R atomic number from Nd to Dy, except for Ce, reflecting the lanthanide contraction. Regular anisotropic expansions mainly along the a- and b-axis rather than along the c-axis are observed for all of the compounds upon hydrogenation. Hydrogenation leads to an increase in the Curie temperature and a corresponding increase in the saturation magnetization at room temperature for each compound. First order magnetization processes (FOMP) occur in the external magnetic fields for Nd3Fe24.5Cr4.5H5.0, Tb3Fe27.0Cr2.0H2.8, and Gd3Fe28.0Cr1.0H4.2 compounds.

Structural and magnetic properties of hydrides R3Fe29-xVxHy (R = Y, Ce, Nd, Sm, Gd, Tb, and Dy)

A systematic investigation of crystallographic and intrinsic magnetic properties of the hydrides R3Fe29 - xVxHy (R = Y, Ce, Nd, Sm, Gd, Tb, and Dy) has been performed in this work. The lattice constants a, b, and c and the unit cell volume of R3Fe29 - xVxHy decrease with increasing rare-earth atomic number from Nd to Dy, except for Ce, reflecting the lanthanide contraction. Hydrogenation results in regular anisotropic expansions along the a-, b-, and c-axes in this series of hydrides. Abnormal crystallographic and magnetic properties of Ce3Fe27.5V1.5H6.5, like Ce3Fe27.5V1.5, suggest that the Ce ion is non-triply ionized. Hydrogenation leads to the increase in both Curie temperature for all the compounds and in the saturation magnetization at 4.2 K and RT for R3Fe29 - xVx with R = Y, Ce, Nd, Sm, Gd, and Dy, except for Tb. Hydrogenation also leads to a decrease in the anisotropy field at 4.2 K and RT for R3Fe29 - xVx with R = Y, Ce, Nd, Gd, Tb, and Dy, except for Sm. The Ce3Fe27.5V1.5 and Gd3Fe28.4V0.6 show the larger storage of hydrogen with y = 6.5 and 6.9 in these hydrides. (C) 1998 Elsevier Science B.V. All rights reserved.

Intrawell and interwell transfer of excitons in growth-interrupted quantum wells

Intrawell and interwell transfers of excitons are observed by a temperature-dependent continuous-wave photoluminescence study of growth-interrupted single quantum wells. The intrawell transfer among the interface localization areas suggests a thermodynamic equilibrium between energy relaxation via LO-phonon emission and thermal population via phonon absorption. Thermal population is dominant in wider wells while relaxation is clearly observable in a four-monolayer narrow well at low temperatures. Interwell transfer of excitons also occurs between two narrow wells. (C) 1998 Academic Press.

Crystallographic and magnetic properties of the hydrides R3Fe29-xCrxHy (R = Y, Ce, Nd, Sm, Gd, Tb, and Dy)

A systematic study of the structural and intrinsic magnetic properties of the hydrides R3Fe29-xCrxHy (R = Y, Ce, Nd, Sm, Gd, Tb, and Dy) has been performed. Hydrogenation lends to a relative volume expansion of the unit cell and a decrease in x-ray density for each compound. Anisotropic expansions mainly along the n- and b-axes rather than along the c-axis for all of the compounds upon hydrogenation are observed. The lattice constants and the unit-cell volume of R3Fe29-xCrx and R3Fe29-xCrxHy decrease with increasing R atomic number from Nd to Dy, except for Ce, reflecting the lanthanide contraction. Hydrogenation results in an increase in the Curie temperature and a corresponding increase in the saturation magnetization at room temperature for each compound. After hydrogenation a decrease of 0.34 mu(B)/Fe in the average Fe atomic magnetic moment and a slight increase in the anisotropy field for Y3Fe27.2Cr1.8 are achieved at 4.2 K. First-order magnetization processes (FOMP) occur in magnetic fields of around 1.5 T and 4.0 T at 4.2 K for Nd3Fe24.5Cr4.5H5.0 and TD3Fe27.0Cr2.0H2.8, and around 1.4 T at room temperature for Gd3Fe28.0Cr1.0H4.2. The abnormal crystallographic and magnetic properties of Ce3Fe25.0Cr4.0 and Ce3Fe25.0Cr4.0H5.4 suggest that the Ce ion non-triply ionized.

Influence of A-type Zeolite on Methane Hydrate Formation

The porous medium has an important effect on hydrate formation. In this paper, the formation process and the gas storage capacity of the methane hydrate were investigated with A-type zeolite and Sodium Dodecyl Sulfate (SDS) existing in the system. The results show that A-type zeolite can influence methane hydrate formation. At the temperature of 273.5 K and pressure of 8.3 MPa, the distilled water with A-type zeolite can form methane hydrate with gaseous methane in 12 hours. The formation process of the system with A-type zeolite was quite steady and the amount of A-type zeolite can influence the gas storage capacity significantly. The adding of A-type zeolite with 0.067 g.(g water)(-1) into 2 x 10(-3) g.g(-1) SDS-water solution can increase the gas storage capacity, and the maximum increase rate was 31%. Simultaneously the promotion effect on hydrate formation of 3A-type zeolite is much more obvious than that of 5A-type zeolite when the water adding amounts are 0.033 g.g(-1) and 0.067 g.g(-1) at the experimental conditions.

Influence of 5A-Type Zeolite Powder on Tetrahydrofuran Hydrate Formation and Dissociation Process

Visual observations of tetrahydrofuran (THF) hydrate formation and dissociation processes with 5A-type zeolite powder were made at normal atmospheric conditions and below zero temperature by microscope. Results indicate that 5A-type zeolite powder can promote THF hydrate growth. At the same time, in the presence of 5A-type zeolite, agglomerated crystals and vein-like crystals of THF hydrate were also formed. SA-type zeolite powder increases the crystallization temperature and decreases the dissociation temperature. The particle size distribution of 5A-type zeolite powder influences THF hydrate formation and its dissociation characteristics significantly.

苯乙炔类分子导线的合成、组装及电子传输性能

分子导线作为未来分子电子器件的重要组成部分，其合成，组装及电子传输性能研究是当今化学、物理、生物和微电子工程等领域里一个非常热门的研究课题。本论文在齐聚苯乙炔及齐聚苯乙炔一唾吩乙炔分子导线的合成、组装及电子传输性能研究方面进行了一些工作，主要成果有以下几个方面：一、官能化短链分子导线的合成与表征比较系统地合成不同端基，不同分子长度和不同主链结构的乙酞琉基官能化的齐聚苯乙炔类分子导线，以便比较系统地研究各种因素对这类分子导线的自组装及电子传输性能的影响。对所有合成的官能化分子导线进行了红外光谱、核磁共振氢谱和质谱表征以确定其结构。二、长链分子导线的合成与表征用溶液和固定相快速合成方法合成了一系列苯乙炔齐聚物及苯乙炔一（蜜份乙炔交替共聚齐聚物：1）采用简便的路线，用溶液和固定相方法快速合成出十二烷氧基取代的苯乙炔齐聚物，最一长达到了八聚体。（2）采用一条最简便的路线，用固定相方法快速合成了异丙基取代的苯乙炔齐聚物，最长达到了八聚体。（3）用溶液和固定相方法首次合成了苯乙炔一唾吩乙炔交替共聚齐聚物。（4）用一种新颖的“现场去保护／偶联”二倍速方案快速合成出十二烷氧基取代的苯乙炔齐聚物，最长达到了八聚体。该方案最大的优点在于无需分离出对空气敏感的芳香端炔化合物，从而简化了实验操作以及提高了产物的纯度。对所有合成的齐聚物进行了红外光谱、核磁共振氢谱、核磁共振碳谱和激光质谱表征以确定其结构。三、官能化分子导线的组装及电子传输性能研究（l）用STM和CP-AFM研究了合成的官能化分子导线在金基底的自组装行为，发现形成的自组装单层缺陷很少，而且自组装单层非常均一。（2）用电化学和导电原子力显微镜技术研究了上述官能化齐聚苯乙炔分子导线的电子传输性能，发现界面接触和分子长度对分子导线的电子传导能力有很大的影响，而链结构的影响则相对要小些。此外，我们还发现齐聚苯乙炔体系的电子传输衰减系数β值仅为0.19A-1，说明它是一类性能优异的分子导线侯选物。（3）通过量子化学计算，我们对实验结果进行了初步解释。

盐和有机物对氨基酸热力学性质的影响-NaCl氨基酸-葡萄糖-水体系

在278.15-318.15范围内，本文测定了以下四个无液接电池的电动势：Pt,H_2(g, 1 atm)|HCl(m)、X Mass% Glucose-H_2O|Ag-AgCl (A) Pt,H_2 (g, 1 atm)|G(m_1), HGCl (m_2), X Mass% Glucose-H_2O|Ag-AgCl (B) Pt,H_2 (g, 1 atm) |HCl (m), NaCl (M-m), X Mass% Glucose-H_2O|Ag-AgCl (C) Pt,H_2 (g, 1 atm)|G(m_1), HGCl (m_2), NaCl (M-m), X Mass% Glucose-H_2O|Ag-AgCl (D) 其中G为中性甘氨酸，NH_3CH_2COO~-, HGClm为甘氨酸的盐酸盐，为相应电解质的质量摩尔浓度，X为葡萄糖在葡萄糖-水混合溶剂中的质量百分数，M为恒定的离子强度且M = 1.0mol/kg。并且测定了Glucose-H_2O的密度和介电常数。利用传统的D-H公式外推法和基于Pitzer理论的多项式逼近法分别确定了电池的标准电动势E°_3、E°_3，以及甘氨酸的一级热力学解离1.0mol/kg）-葡萄糖-水-HCl的HCl无限稀释溶液为参考态，并将两种方法得到的结果作了比较。甘氨酸的一级热力学解离常数符合Harned-Robinson方程：pK = A_1/T + A_2 + A+3 T 本文讨论了盐和有机物对pK_1的影响，并根据前人及我们的工作，指出在极性质子溶剂中和在极性非质子溶剂中的pK_1对1/D作图，分别得到直线和曲线。同时讨论了混合溶剂中甘氨酸的一级解离过程的各个热力学量ΔG°，ΔH°，ΔS°，ΔCp°，并讨论HCl的迁移性质和有机物葡萄糖、盐对它们的影响。最后将不同混合溶剂中甘氨酸解离过程的迁移能，迁移熵等作了比较。

WELL-WIDTH DEPENDENCE OF THE EXCITON LIFETIME IN GAAS/ALGAAS QUANTUM-WELLS

The dependence of the excitonic lifetime on the well width has been studied in conventional GaAs/AlGaAs quantum wells. Two clearly different variations of the measured excitonic lifetime have been observed. For wide well widths, we find a nearly linear decrease of the lifetime with decreasing well width. However, when the well is further decreased, a saturation and even increase of the lifetime with decreasing well width are observed. The experimental data are compared with the theory of radiative excitonic recombination, and show that well width dependence of the measured photoluminescence lifetime can be attributed mainly to the change of the excitonic effective volume and the overlap integral as well.