Electron transport properties of MM-HEMT with varied channel indium contents

Transport properties of two-dimensional electron gas (2DEG) are crucial to metamorphic high-electron-mobility transistors (MM-HEMT). We have investigated the variations of subband electron mobility and concentration versus temperature from Shubnikov-de Hass oscillations., and variable temperature Hall measurements. The results indicate that the electrical performance is the best when the In content is 0.65 in the channel for MM-HEMT. When the In content exceeds 0.65, a large lattice mismatch will cause dislocations and result in the decrease of mobility and the fall of performance in materials and devices.