Write-once blue laser recording using silicon doped SbOx thin films prepared by reactive dc-magnetron sputtering

Si:SbOx films have been deposited by reactive dc-magnetron sputtering from a Sb target with Si chips attached in Ar + O-2 with the relative O-2 content 7%. The as-deposited films contained Sb metal, Sb2O3, SiO, Si2O3 and SiO2. The crystallization of Sb was responsible for the changes of optical properties of the films. The results of the blue laser recording test showed that the films had good writing sensitivity for blue laser beam (406.7 nm), and the recording marks were still clear even if the films were deposited in air 60 days, which demonstrated that doping silicon in SbOx films can improve the stability of SbOx films. High reflectivity contrast of about 36% was obtained at a writing power 6 mW and writing pulse width 300 ns. (c) 2007 Elsevier B.V. All rights reserved.

热致NiOx薄膜的结构和光学性质变化

利用直流磁控反应溅射技术制备了氧气和氩气的分压比为5:100的NiOx薄膜。利用X射线衍射仪(XRD)、扫描电镜(SEM)、原子力显微镜(AFM)和光谱仪研究了热处理对薄膜的微观结构和光学性质的影响, 并对沉积态薄膜的粉末进行了热分析。沉积态的NiOx薄膜在262 ℃时开始分解, 导致NiOx薄膜的透过率增加和反射率降低。X射线衍射和示差扫描量热曲线(DSC)分析表明, 在热处理过程中并无物相的变化, 光学性质的变化是由于NiOx薄膜热分解引起薄膜表面形貌发生变化而引起的。通过Kissinger公式计算出

Write-once medium with Fe-Doped BiOx thin films for blue laser recording

Fe:BiOx films are fabricated on K9 glass substrates by rf-magnetron sputtering of a BiFeO target under argon atmosphere with increasing sputtering power from 80 to 200 W at room temperature. It is found that the thin films grown at the sputtering power of 160W can be formed at an appropriate deposition rate and have an improved surface morphology. The XPS result reveals that the films investigated are comprised of Bi, Fe and O elements. A typical XRD pattern shows that no phase transition occurs in the films up to 400 degrees C. The results of the blue laser recording test demonstrate that the Fe:BiOx films have good writing sensitivity for blue laser beam (406.7 nm) and good stability after reading 10000 times. The recording marks of 200nm or less are obtained. These results indicate that the introduction of Fe into BiOx films can reduce the mark size and improve the stability of the films.

Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

Sheet resistance of laser-irradiated Ge2Sb2Te5 thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10(7) to 10(3) Omega/square at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge2Sb2Te5 films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 x 10(-3) and 2.725 Omega m, sheet resistance is 3.37 x 10(4) and 2.725 x 10(7) Omega/square respectively, deduced from the I-V Curves that is obtained by conductive atomic force microscope (C-AFM). (C) 2008 Elsevier B.V. All rights reserved.

Study on the growth, etch morphology and spectra of Y2SiO5 crystal

Undoped Y2SiO5 single crystal was grown by the Czochralski method. The samples were optically polished after orienting and cutting. The rhombus and quadrangular dislocation etching pits, the low-angle grain boundaries and the inclusions in the samples were observed using optical microscope and scanning electron microscope. The absorption spectra were measured before and after H-2 annealing or air annealing. The absorption edge of Y2SiO5 crystal was determined to be about 202 nm. The absorption coefficient of Y2SiO5 crystal decreased after H-2 annealing and obviously increased after air annealing. (C) 2005 Elsevier B.V. All rights reserved.

Annealing effects of sapphire substrate on properties of ZnO films grown by magnetron sputtering

The annealing effects of sapphire substrates on the quality of epitaxial ZnO films grown by dc reactive magnetron sputtering were studied. The atomic steps formed on (0001) sapphire (alpha-Al2O3) substrates surface by annealing at high temperature were analyzed by atomic force microscopy. Their influence on the growth of ZnO films was examined by X-ray diffraction and photoluminescence measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates for ZnO grown by magnetron sputtering is 1400 degrees C for 1 h in air.

化学抛光和退火对钛酸锶基片表面改性研究

Atomic force microscopy (AFM) was applied to study the surface morphology of SrTiO3 substrates which were polished by traditional mechanical and chemical mechanical method respectively. The influence of anneal was also studied. Results show that the RMS of CMP STO substrates can be 0.214 nm. Compared the rocking curve of the unannealed STO substrates with the annealed ones, it indicates that anneal can improve the crystal quality.

LiGaO_2衬底上ZnO外延膜的结构与光学特性

采用磁控溅射法在(001)、(100)及(010)LiGaO2衬底上制备了ZnO薄膜,通过X射线衍射(XRD)、原子力显微镜(AFM)、透过光谱以及光致发光谱(PL)对薄膜的结构、形貌及光学性质进行了表征。结果表明LiGaO2衬底不同晶面上制备的ZnO薄膜具有不同的择优取向,在(001)(、100)及(010)LiGaO2上分别获得了[0001][、1100]及[1120]取向的ZnO薄膜;不同取向的ZnO薄膜表面形貌差异较大;薄膜在可见光波段具有较高的透过率;在ZnO薄膜的光致发光谱中只观察到了位于378 nm的紫外发射峰,而深能级发射几乎观察不到,(1100)取向的薄膜紫外发射峰强度最大,半高宽也最小,薄膜光致发光性质的差异主要和晶粒尺寸有关。

Growth, etching morphology and spectra of LiAlO2 crystal

gamma-LiAlO2 single crystal was successfully grown by Czochralski method. The crystal quality was characterized by X-ray rocking curve and chemical etching. The effects of air-annealing and vapor transport equilibration (VTE) on the crystal quality, etch pits and absorption spectra of LiAlO2 were also investigated in detail. The results show that the as-grown crystal has very high quality with the full width at half maximum (FWHM) of 17.7-22.6 arcsec. Dislocation density in the middle part of the crystal is as low as about 3.0 x 10(3) cm(-2). The VTE-treated slice has larger FWHM value, etch pits density and absorption coefficient as compared with those of untreated and air-annealed slices, which indicates that the crystal quality became inferior after VTE treatment. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Growth and characterization of ZnO films on (0 0 1), (1 0 0) and (0 1 0) LiGaO2 substrates

ZnO films were fabricated on LiGaO2 (0 0 1), (10 0) and (0 10) planes by RF magnetron sputtering. The structural, morphological and optical properties of as-grown ZnO films were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), Raman spectra and photoluminescence (PL) spectra. It is found that the orientation of ZnO films is strongly dependent on the substrate plane. [0 0 0 11, [1 (1) over bar 00] and [11 (2) over bar0] oriented ZnO films are deposited on LiGaO2 (001), (100) and (010), respectively. AFM shows the (0001) ZnO film consists of well-aligned regular hexagonal grains. Raman spectra reveal a tensile stress in the (0 0 0 1) ZnO film and a compressive stress in (110 0) and (112 0) ZnO films. PL spectra of all ZnO films exhibit only a near-band-edge UV emission peak. (C) 2008 Elsevier B.V. All rights reserved.

Laser-induced damage morphology of high-reflective optical coatings

Two different kinds of 1064 nm high-reflective (HR) coatings, with and without SiO2 protective layer, were prepared by electron beam evaporation. Three-dimensional damage morphology, caused by a Nd:YAG pulsed laser, was investigated for these HR coatings. Development of laser-induced damage on HR coatings was revealed by both temperature field calculation and discrete meso-element simulation. Theoretical results met experimental very well. (C) 2004 Elsevier B.V. All rights reserved.

Influence of Cr interlayer on the structure and optical properties of Ag films on glass substrate by magnetron sputtering

Optical properties and microstructure of Ag film on glass substrate with Cr intermediate layer were studied by using spectrophotometer and XRD. The spectra results showed that introducing Cr intermediate layer reduced the surface roughness and promoted the reflectivity of Ag film. The XRD analysis showed that the crystalline grains increased and the stress decreased. The adhesion was also improved by using the tape test method. (c) 2006 Published by Elsevier B.V.

倾斜角沉积技术制备ZnS双折射雕塑薄膜

使用倾斜角沉积（GLAD）的电子束蒸发技术，制备了倾斜角度在60°～85°之间的ZnS双折射雕塑薄膜（STF）。使用X射线衍射（XRD）和扫描电镜（SEM）检测了ZnS薄膜的结晶状态和断面形貌，使用Lamda-900分光光度计测量了薄膜在不同的偏振光入射时的透过率。研究发现，室温下倾斜沉积ZnS薄膜断面为倾斜柱状结构，且薄膜的结晶程度不高。在相同的监控厚度时，随倾斜角度增大，沉积到基片上的薄膜厚度逐渐变小，但仍然大于余弦曲线显示的理论厚度。根据偏振光垂直入射时薄膜的透过光谱计算了不同角度沉积的薄膜的折射率