LBO晶体上1064，532nm倍频增透膜的镀制及性能分析

用电子束蒸发沉积方法在X切LBO（X-LBO）晶体上镀制了两种不同膜系结构的1064和532nm倍频增透膜，其中一种膜系结构为基底／ZrO2／Y2O3／A12O3／SiO2／空气，另一种为基底／0．5Al2O3／ZrO2／Y2O3／A12O3／SiO2／空气，两种膜系结构的主要差别在于有无氧化铝过渡层。测量了薄膜的反射率光谱曲线，发现两种增透膜在1064和532nm处的反射率均小于0．5％，实际镀制结果与理论设计曲线的差异主要是由材料折射率的变化引起的。且对样品在空气环境中进行了温度为473K的退火处理，

Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition

We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 degrees C without thermal annealing and allowing the integration with standard silicon processes. Due to the 0.14% residual tensile strain generated by the thermal expansion mismatch between Ge and Si, an efficiency enhancement of nearly 3-fold at 1.55 mu m and the absorption edge shifting to longer wavelength of about 40 nm are achieved in the epitaxial Ge films. The diode with a responsivity of 0.23 A/W at 1.55 mu m wavelength and a bulk dark current density of 10 mA/cm(2) is demonstrated. These diodes with high performances and full compatibility with the CMOS processes enable monolithically integrating microphotonics and microelectronics on the same chip.

Comment on

In a recent letter, Hsieh reported the growth of high-quality Ge epilayers with a SiGe buffer thickness of only 0.45 mu m, a surface root-mean-square roughness of less than 0.4 nm, and a threading dislocation of 7.6 x 10(6) cm(-2) on Si+ pre-ion-implantation Si substrate utilizing of strain relaxation enhancement by point defects and interface blocking of the dislocations. Our comment has focused on x-ray diffraction data shown in Fig. 3 of Ref. 1. We demonstrate that the strain in Ge epilayers is tensile, rather than compressive as misunderstood by the authors. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3003873]

Method for measurement of lattice parameter of cubic GaN layers on GaAs (001)

An extended technique derived from triple-axis diffraction setup was proposed to measure lattice parameters of cubic GaN(c-GaN) films. The fully relaxed lattice parameters of c-GaN are determined to be 4.5036+0.0004 Angstrom, which is closer to the values of a hypothetical perfect crystal. The speculated zero setting correction (Deltatheta) is very slight and within the range of the accuracy of measurement. Additionally, we applied this method to analyze strain of four different kinds of c-GaN samples. It is found that in-plane strain caused by large lattice mismatch and thermal expansion coefficients mismatch directly influence the epilayer growth at high temperatures, indicating that the relaxation of tensile strain after thermal annealing helps to improve the crystalline quality of c-GaN films and optical properties. (C) 2003 Elsevier Science B.V. All rights reserved.

The intrinsic temperature effect of the Raman spectra of graphite

The Raman spectra of ion-implanted highly oriented pyrolytic graphite (HOPG) are reported, in which an additional mode at 1083 cm(-1) and three doublet structures in the positions of similar to 1350, similar to 2450, and similar to 2710 cm(-1) are revealed. Noticeable frequency shifts are observed for all the Raman bands between the spectra excited with different laser powers, which are interpreted as the pure temperature effect and a downshift in the C-C stretching frequency induced by the thermal expansion. Moreover, the pure temperature effect (d omega/dT)(V) without anharmonic contribution is achieved in pristine HOPG. The results suggest that the pure temperature effect without anharmonic contribution plays an important role in the frequency shifts with temperature. (C) 1999 American Institute of Physics. [S0003-6951(99)01313-3].

Some properties of gallium nitride films grown on (0001) oriented sapphire substrates by gas source molecular beam epitaxy

The Raman and photoreflectivity spectra of gallium nitride (GaN) films grown on (0001) oriented sapphire substrates by gas source molecular beam epitaxy (GSMBE) have been investigated. The Raman spectra showed the presence of the E-2(high) mode and a shift in the wavenumber of this mode with respect to the GaN epilayer thickness. The Raman scattering results suggest the presence of stress due to lattice and thermal expansion misfit in the films, and also indicate that the buffer layer play an important role in the deposition of high quality GaN layers. The residual stress changes from tensile to compressive as the epilayer thickness increases. Samples subjected to anneal cycles showed an increase in the mobility due probably to stress relaxation as suggested by an observed shift in the E-2(high) mode in the Raman spectra after annealing.

A model of dislocations at the interface of the bonded wafers

Wafer bonding is regardless of lattice mismatch in the integration of dissimilar semiconductor materials. This technology differs from the heteroepitaxy mainly in the mechanism of generating dislocations at the interface. A model of dislocations at the bonded interface is proposed in this paper. Edge-like dislocations, which most efficiently relax the strain, are predominant at the bonded interface. But the thermal stress associated with large thermal expansion misfit may drive dislocations away from the bonded interface upon cooling.

Dissociative recombination of the acetaldehyde cation, CH3CHO+

The dissociative recombination of the acetaldehyde cation, CH3CHO+, has been investigated at the heavy ion storage ring CRYRING at the Manne Siegbahn Laboratory in Stockholm, Sweden. The dependence of the absolute cross section of the reaction on the relative kinetic energy has been determined and a thermal rate coefficient of k(T) = (1.5 +/- 0.2) x 10(-6) (T/300)(-0.70 +/- 0.02) cm(3) s(-1) has been deduced, which is valid for electron temperatures between similar to 10 and 1000 K. The branching fractions of the reaction were studied at similar to 0 eV relative kinetic energy and we found that breaking one of the bonds between two of the heavy atoms occurs in 72 +/- 2% of the reactions. In the remaining events the three heavy atoms stay in the same product fragment. While the branching fractions are fairly similar to the results from an earlier investigation into the dissociative recombination of the fully deuterated acetaldehyde cation, CD3CDO+, the thermal rate coefficient is somewhat larger for CH3CHO+. Astrochemical implications of the results are discussed.

DISSOCIATIVE RECOMBINATION OF PROTONATED PROPIONITRILE, CH3CH2CNH+: IMPLICATIONS FOR TITAN'S UPPER ATMOSPHERE

The dissociative recombination of protonated propionitrile, CH3CH2CNH+, has been investigated at the heavy ion storage ring, CRYRING, at the Manne Siegbahn Laboratory, Stockholm University, Sweden. The thermal rate coefficient has been deduced to follow k(T) = (1.5 +/- 0.2) x 10(-6) (T/300)(-0.76) (+/-) (0.02) cm(3) s(-1) for electron temperatures ranging from similar to 10 to similar to 1000 K. Measurements of the branching fractions were performed at similar to 0 eV relative kinetic energy. It has been found that in 43% +/- 2% of the reactions the four heavy atoms remain in the same product fragment. An equal portion of the reactions leads to products where one of the heavy atoms is split off from the other three and 14% +/- 1% result in a breakup into two heavy fragments containing two heavy atoms each. We discuss the significance of the data to Titan's upper atmosphere.

Phase stability and thermophysical properties of neodymium cerium composite oxide

Nd2CexO3+2x (x = 2.25, 2.5, 2.75, 3.0) were synthesized by solid-state reaction, and their phase stabilities and thermophysical properties were investigated. The X-ray diffraction (XRD) results indicated that Nd2CexO3+2x with fluorite structure were stable after long-term annealing at 1673 K. They have higher thermal expansion coefficients (TECs) than yttria-stabilized zirconia (YSZ) which is the typical thermal barrier coating (TBC) material, especially the thermal expansion as a function of temperature is parallel to that of the nickel-based superalloy.

Preparation and characterization of La2Zr2O7 coating with the addition of Y2O3 by EB-PVD

Thermal barrier coatings (TBCs) of La2Zr2O7 (LZ) with the addition of 3 wt.% Y2O3 (LZ3Y) were deposited by electron beam-physical vapor deposition (EB-PVD). The phase stabilities, thermophysical and mechanical properties, and chemical compositions of these ceramics and coatings were studied in detail. The phase stability and thermal expansion behavior of LZ3Y bulk material are identical to those of LZ bulk material, but the mechanical properties of the former are superior to those of the latter. Elemental analysis and X-ray diffraction indicate that compositional deviation of LZ coating can be optimized after doping by 3 wt.% Y2O3, Y2O3 acts as a dopant as well as a process regulator. The optimal composition of LZ3Y coating could be effectively achieved by the addition of excess Y2O3 into the ingot and by properly controlling the current of electron beam (i.e. similar to 650 mA).

Synthesis and properties of novel regioirregular polyimides from easily synthesized asymmetrical dichlorophthalimide monomers

New asymmetrical aromatic dichlorophthalimide monomers containing pendant groups (trifluoromethyl or methyl) were conveniently prepared from inexpensive and commercially available compounds. With these monomers, a new class of soluble polyimides with a regioirregular structure within the polymer backbone was obtained by the Ni(0)-catalyzed polymerization method. The structures of the polymers were confirmed by various spectroscopic techniques. The polyimides displayed better solubility and higher thermal stability than the corresponding regular polyimides. In addition, fluorinated polyimides in this study had low dielectric constants ranging from 2.52 to 2.78, low moisture absorptions of less than 0.59%, and low thermal expansion coefficients between 10.6 and 19.7 ppm/degrees C. The oxygen permeability coefficients and permeability selectivity of oxygen to nitrogen of the films were in the ranges of 2.99-4.20 barrer and 5.55-7.50, respectively. We have demonstrated that the synthetic pathway for polyimides provides a successful approach to increasing the solubility and processability of polyimides without sacrificing their thermal stability.

Calculation of the bulk modulus of simple and complex crystals with the chemical bond method

The relation between the lattice energies and the bulk moduli on binary inorganic crystals was studied, and the concept of lattice energy density is introduced. We find that the lattice energy densities are in good linear relation with the bulk moduli in the same type of crystals, the slopes of fitting lines for various types of crystals are related to the valence and coordination number of cations of crystals, and the empirical expression of calculated slope is obtained. From crystal structure, the calculated results are in very good agreement with the experimental values. At the same time, by means of the dielectric theory of the chemical bond and the calculating method of the lattice energy of complex crystals, the estimative method of the bulk modulus of complex crystals was established reasonably, and the calculated results are in very good agreement with the experimental values.

Hydrothermal synthesis of ZrW2O8 nanorods

Negative thermal expansion ZrW2O8 nanorods were synthesized by a rapid low-temperature hydrothermal route, followed with a heat treatment at 500 degrees C for 6h. Acidity of the HCl addition to the mixed solution in the hydrothermal condition strongly affects the formation of the precursor ZrW2O7(OH)(2)(H2O)(2). High acidity of HCl in the range of 5-10 N facilitates the nucleation of ZrW2O7(OH)(2)(H2O)(2), but constrains its growth. Low acidity of HCl addition (< 5 N) only obtained the products ZrO2 and WO3 by firing the precursors. FE-SEM images revealed that the shape and size of ZrW2O8 were modeled after its precursor ZrW2O7(OH)(2)(H2O)(2).

Nanocrystalline La2Mo2O9 and its characterization

In this work, both the thermal expansion and electrical conductivity of nanocrystalline La2Mo2O9 were studied. The nanocrystalline powder of La2Mo2O9 was obtained by sol-gel method, and with the help of SHP (superhigh pressure) up to 4.5 x 10(4) atm at 700 degrees C for a short time, and the nanocrystalline powder was densified without obvious particle size growth. The electrical conductivity of nanocrystalline La2Mo2O9 was one order of magnitude lower than that of the microcrystalline sample at the same temperature. Owing to the phase transition, the microcrystalline La2MO2O9 has an abrupt increase of thermal expansion with a peak value of 48 x 10(-6) K-1 at 556 degrees C. For the nanocrystalline material, the peak value increases to 112 x 10(-6) K-1 at 520 degrees C. On the other hand, above 600 degrees C the significant growth of particle size of the nanocrystalline La2Mo2O9 was observed, accompanying by a tremendous increase of thermal expansion with a peak value of 1565 x 10(-6) K-1 at 620 degrees C. The electrical conductivity of La1.6Nd0.4Mo2O9 at 800 degrees C is 0.14 S center dot cm(-1) which is about one third higher than that of La2Mo2O9.