Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD

AlGaN/GaN npn heterojunction bipolar transistor structures were grown by low-pressure MOCVD. Secondary ion mass spectroscopy (SIMS) measurements were carried out to study the Mg memory effect and redistribution in the emitter-base junction. The results indicated that there is a Mg-rich film formed in the ongrowing layer after the Cp2Mg source is switched off. The Mg-rich film can be confined in the base section by switching off the Cp2Mg source for appropriate time before the end of base growth. Low temperature growth of the undoped GaN spacer suppresses the Mg redistribution from Mg rich film. The delay rate of the Mg profile in sample C with spacer growing in low temperature is about 56 nm/decade, which becomes sharper than 80 nm/decade of the samples A and B without low temperature spacer. (C) 2005 Elsevier Ltd. All rights reserved.

Interdot interaction induced zero-bias maximum of the differential conductance in parallel double quantum dots

We have studied the equilibrium and nonequilibrium electronic transports through a double quantum dot coupled to leads in a symmetrical parallel configuration in the presence of both the inter- and the intradot Coulomb interactions. The influences of the interdot interaction and the difference between dot levels on the local density of states (LDOS) and the differential conductance are paid special attention. We find an interesting zero-bias maximum of the differential conductance induced by the interdot interaction, which can be interpreted in terms of the LDOS of the two dots. Due to the presence of the interdot interaction, the LDOS peaks around the dot levels epsilon(i) are split, and as a result, the most active energy level which supports the transport is shifted near to the Fermi level of the leads in the equilibrium situation. (c) 2006 American Institute of Physics.

Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates

AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrates by MOCVD, and 0.8-mu m gate length devices were fabricated and measured. It is shown by resistance mapping that the HEMT structures have an average sheet resistance of approximately 380 Omega/sq with a uniformity of more than 96%. The 1-mm gate width devices using the materials yielded a pulsed drain current of 784 mA/mm at V-gs=0.5 V and V-ds=7 V with an extrinsic transconductance of 200 mS/mm. A 20-GHz unity current gain cutoff frequency (f(T)) and a 28-GHz maximum oscillation frequency (f(max)) were obtained. The device with a 0.6-mm gate width yielded a total output power of 2.0 W/mm (power density of 3.33 W/mm) with 41% power added efficiency (PAE) at 4 GHz.

Design of high brightness cubic-GaN LEDs grown on GaAs substrate

The Principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of GaN/GaAs optical devices by wafer-bonding technique. The calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown GaN/GaAs samples when a thin Ni layer was used as adhesive layer and Ag layer as reflective layer. Full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results.

Thermal annealing behaviour of Ni/Au on n-GaN Schottky contacts

The Schottky behaviour of Ni/Au contact on n-GaN was investigated under various annealing conditions by current-voltage (I-V) measurements. A non-linear fitting method was used to extract the contact parameters from the I-V characteristic curves. Experimental results indicate that high quality Schottky contact with a barrier height and ideality factor of 0.86 +/- 0.02 eV and 1.19 +/- 0.02 eV, respectively, can be obtained under 5 min annealing at 600degreesC in N-2 ambience.

Deep centers investigations of P-HEMT functional materials of ultra-high-speed microstructures grown by MBE

The deep centers of high electron mobility transistor (HEMT) and pseudomorphic-HEMT (P-HEMT) functional materials of ultra-high-speed microstructures grown by MBE are investigated using deep level transient spectroscopy (DLTS) technique. DLTS spectra demonstrate that midgap states, having larger concentrations and capture cross sections, are measured in n-AlGaAs layers of HEMT and P-HEMT structures. These states may correlate strongly with oxygen content of n-AlGaAs layer. At the same time, one can observe that the movement of DX center is related to silicon impurity that is induced by the strain in AlGaAs layer of the mismatched AlGaAs/InGaAs/GaAs system of P-HEMT structure. The experimental results also show that DLTS technique may be a tool of optimization design of the practical devices.

Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer

The photoluminescence spectra of the single delta -doped AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer were studied. There are two peaks in the PL spectra of the structure corresponding to two sub-energy levels of the InGaAs quantum well. It was found that the photoluminescence intensity ratio of the two peaks changes with the spacer thickness of the pseudomorphic HEMTs. The reasons were discussed. The possible use of this phenomenon in optimization of pseudomorphic HEMTs was also proposed. (C) 2001 Elsevier Science B.V. All rights reserved.

High-quality metamorphic HEMT grown on GaAs substrates by MBE

Metamorphic high electron mobility transistor (M-HEMT) structures have been grown on GaAs substrates by molecular beam epitaxy (MBE). Linearly graded and the step-graded InGaAs and InAlAs buffet layers hal e been compared, and TEM, PL and low-temperature Hall have been used to analyze the properties of the buffer layers and the M-HEMT structure. For a single-delta-doped M-HEMT structure with an In0.53Ga0.47As channel layer and a 0.8 mum step-graded InAlAs buffer layer, room-temperature mobility of 9000 cm(2)/V s and a sheet electron density as high as 3.6 x 10(12)/cm(2) are obtained. These results are nearly equivalent to those obtained for the same structure grown on an InP substrate. A basic M-HEMT device with 1 mum gate was fabricated, and g(m) is larger than 400 mS/mm. (C) 2001 Elsevier Science B.V. All rights reserved.

Si-based optoelectronic devices and their attractive applications

The semiconductor photonics and optoelectronics which have a great significance in the development of advanced high technology of information systems will be discussed in this paper. The emphasis will be put on the recent research carried out in our laboratory in enhanced luminescence from low dimensional materials such as SiGe/Si and Er-doped Si-rich SiO2/Si and Er-doped SixNy/Si. A ring shape waveguide structure, used to promote the effective absorption coefficient in PIN photodetector for 1.3 mu m wavelength and a resonant cavity enhanced structure, used to improve the quantum efficiency and response in heterostructure photo-transistor (HPT), are also proposed in this paper.

H+ISFET-based biosensor for determination of penicillin G

A biosensor based on an H+ ion sensitive field effect transistor (H+-ISFET) and penicillin G acylase has been developed. The response time of the sensor to different concentrations of penicillin G was 30 s. In a 20 mM phosphate buffer at pH 7.0, the linear range of the calibration curve was from 0.5 to 8 mM. The coefficients of variation for three samples with 20 repeated measurements were below 5%. Stability of the sensor could reach about 6 months and more than 1000 runs were performed without a significant decrease of the output value. The sensor was tested for measurement of the penicillin G content in penicillin fermentation broth. Forty samples with low and high concentrations of penicillin G were chosen for the correlation test. The values assayed by the sensor method were compared with the values assayed by HPLC method, the correlation coefficient (r) was 0.9944 and the regression equation was y = 1.034X - 2083.7 respectively. The different measuring methods are discussed in the text. (C) 1998 Published by Elsevier Science S.A. All rights reserved.

Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells

Fourier transform photoluminescence measurements were carried out to investigate the optical transitions in InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells. Samples with electron density n(s) between 0.8 and 5.3 x 10(12) cm(-2) rue studied. Strong recombination involving one to three populated electron subbands with the first heavy-hole subband is observed. Fermi edge singularity (FES) clearly can be observed for some samples. The electron subband energies in the InGaAs/InAlAs step quantum wells were calculated by a self-consistent method, taking into account strain and nonparabolicity effects and the comparison with the experimental data shows a good agreement. Our results can help improve understanding for the application of InGaAs/InAlAs step quantum wells in microelectronic and optoelectronic devices. (C) 1998 Elsevier Science Ltd. All rights reserved.

Observation of the third subband population in modulation-doped InGaAs/InAlAs heterostructure

The population of the third (n = 3) two-dimensional electron subband of InGaAs/InAlAs modulation-doped structures has been observed by means of Fourier transform photoluminescence (PL). Three well resolved PL peaks centred at 0.737, 0.908, and 0.980eV are observed, which are attributed to the transitions from the lowest three electron subbands to the n = 1 heavy-hole subband. The subband separations clearly exhibiting the features of the stepped quantum well with triangle and square potentials are consistent with numerical calculation. Thanks to the presence of Fermi cutoff, the population ratio of these three subbands can be estimated. Temperature- and excitation-dependent luminescences are also analyzed.

The third subband population in modulation-doped InGaAs/InAlAs heterostructures

We have observed the population of the third (n=3) two-dimensional electron subband of InGaAs/ InAlAs modulation-doped structures with very dense sheet carrier density by means of Fourier transform photoluminescence (PL). Three well-resolved PL peaks centered at 0.737, 0.908, and 0.980 eV are observed, which are attributed to the recombination transitions from the lowest three electron subbands to the n=1 heavy-hole subband. The subband separations clearly exhibit the features of the stepped quantum well with triangle and square potential, consistent with numerical calculation. Thanks to the presence of the Fermi cutoff, the population ratio of these three subbands can be estimated. Temperature and excitation intensity dependence of the quantum well luminescence intensity is also analyzed. (C) 1997 American Institute of Physics.

On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J

We have explored the shared-layer integration fabrication of an resonant-cavity-enhanced p-i-n photodector (RCE- p-i-n-PD) and a single heterojunction bipolar transistor (SHBT) with the same epitaxy grown layer structure. MOCVD growth of the different layer structure for the GaAs based RCE- p-i-n-PD/SHBT require compromises to obtain the best performance of the integrated devices. The SHBT is proposed with super-lattice in the collector, and the structure of the base and the collector of the SHBT is used for the RCE. Up to now, the DC characteristics of the integrated device have been obtained.

A Fast-Locking Phase-Locked Loop Using a Seven-State Phase Frequency Detector

A seven-state phase frequency detector (S.S PFD) is proposed for fast-locking charge pump based phase-locked loops (CPPLLs) in this paper. The locking time of the PLL can be significantly reduced by using the seven-state PFD to inject more current into the loop filter. In this stage, the bandwidth of the PLL is increased or decreased to track the phase difference of the reference signal and the feedback signal. The proposed architecture is realized in a standard 0.35 mu m 2P4M CMOS process with a 3.3V supply voltage. The locking time of the proposed PLL is 1.102 mu s compared with the 2.347 mu s of the PLL based on continuous-time PFD and the 3.298 mu s of the PLL based on the pass-transistor tri-state PFD. There are 53.05% and 66.59% reductions of the locking time. The simulation results and the comparison with other PLLs demonstrate that the proposed seven-state PFD is effective to reduce locking time.