Improvement of the electrical property of semi-insulating InP by suppression of compensation defects

Semi-insulating (SI) InP obtained by iron phosphide ambient annealing has very low concentration of deep level defects and better electrical property than SI-InP annealed in phosphorus ambient. The defect suppression phenomenon correlates with Fe diffusion and substitution in the annealing process. Analysis of the experimental result suggests that a high activation ratio of incorporated Fe in InP has an effect of defect suppression in Fe-doped and Fe-diffused SI-InP.

Study on methane hydration process in a semi-continuous stirred tank reactor

The methane hydration process is investigated in a semi-continuous stirred tank reactor. Liquid temperatures and reaction rates without stirrer are compared with those occurring with stirrer, while at the same time better stirring conditions of the methane hydration process are given by the experiments. Some basic data of fluid mechanics, for example, stirring Reynolds number, Froucle number and stirrer power, are calculated during the methane hydration process, which can be applied to evaluate stirrer capacity and provide some basic data for a scaled up reactor. Based on experiment and calculations in this work, some conclusions are drawn. First, the stirrer has great influence on the methane hydration process. Batch stirring is helpful to improve the mass transfer and heat transfer performances of the methane hydration process. Second, induction time can be shortened effectively by use of the stirrer. Third, in this paper, the appropriate stirring velocity and stirring time were 320 rpm and 30 min, respectively, at 5.0 MPa, for which the storage capacity and reaction time were 159.1 V/V and 370 min, respectively. Under the condition of the on-flow state, the initial stirring Reynolds number of the fluid and the stirring power were 12,150 and 0.54 W, respectively. Fourth, some suggestions, for example, the use of another type of stirrer or some baffles, are proposed to accelerate the methane hydration process. Comparing with literature data, higher storage capacity and hydration rate are achieved in this work. Moreover, some fluid mechanics parameters are calculated, which can provide some references to engineering application.

遥爪丁腈共聚物的增韧环氧－聚氨酯IPN及PVC共混物的合成与表征

Ⅰ. 增韧环氧／聚氨酯互穿网络聚合物的合成与表征 用部分环氧树脂与丁腈羧反应，进行端基转化，制得端环氧基丁腈－环氧共聚物与环氧树脂的混合物，经叔胺固化后，得到增韧环氧（TEpx）。制备了两种IPN体系，体系1为增韧环氧／蓖麻油聚氨酯IPN，体系2为增韧环氧／聚醚聚氨酯IPN。用红外光谱研究了动力学，研究结果是，对于体系1，－OH基与－NCO基的反应速度大于环氧基的聚合速度，因此，IPN体系中，PU网络的形成比环氧网络快。环氧上的－OH基与蓖麻油上的羟基相似。同属伸羟基，它也会与－NCO基反应，因此，所形成的IPN的两网络间，存在着一定程度的化学交联。在增韧环氧的分子结构中，含有丁腈羧低聚物链段，使得增韧环氧与蓖麻油聚氨酯的相容性较好，该因素对这种IPN形态结构的形成，是很重要的，从动态力学性能的测试结果，能说明这个问题，即玻璃化转变峰很宽，在一定组成时，半峰宽几乎达100 ℃。对于体系2，聚氨酯相起反应的羟基是伯羟基，它与－NCO基的反应速度比环氧中的羟基与－NCO基的反应速度大得多。此外，体系中的两组分，即增韧环氧与聚醚聚氨酯的相容性不好，反应速度的差别与相容性的差别，均将导致反应体系中相分离程度的增大。这在tanZ-T曲线上表现得很明显，出现了两个相距甚远的玻璃化转变峰。利用透射电子显微镜对两个IPN体系进行了形态观察，这些IPN具有特殊的结构，既有增韧环氧所存在的两相结构，又有IPN的两相结构。Ⅱ. 聚氯乙烯－丁腈羟低聚物共混物的合成与表征 制备了高聚物（PVC）－低聚物（HTBN）共混物，研究了该共混物的力学性能，阻尼性能及形态结构。研究结果表明，在HTBN中，丙烯腈含量较高时，随着HTBN加入量的增加，PVC的阻尼峰均有不同程度的加宽加高。在力学性能方面，共混物的抗张强度、伸长率也随低聚物中丙烯腈含量的高低而变化，丙烯腈含量较高时（25％，36％），随HTBN加入量的增加，性能变化不大，而丙烯腈含量较低时（15％，5％），当HTBN的加入达一定量时，性能发生突降。这些现象的出现，主要与相容性有关，HTBN中丙烯腈含量高，极性大，与PVC混溶性好，因而阻尼性能、力学性能均好。而HTBN中丙烯腈含量低，与PVC之间的粘合力不好，即混溶性不好，因而共混物性能不好。由TEM照片看，该共混体系的形态结构为细胞状结构，细胞内存在着界面模糊的两相结构，在低丙烯腈含量（15％）时，存在着部分界面清晰的两相结构，形态观察的结果与性能测定的结果一致。

AN ANALYSIS OF CHARGE STATES FOR LOCAL VIBRATIONAL-MODES BY OXYGEN DEFECTS IN SEMI-INSULATING GAAS

The high-resolution spectral measurements for new local vibrational modes near 714 cm-1 due to the oxygen defect in semi-insulating GaAs are analyzed on the basis of a model calculation by self-consistent bond orbital approach. Two charge states of oxygen atom with 1 and 2 extra electrons are assigned to be responsible for these local modes. The observed frequencies are explained by the properties of Ga-O-1 and Ga-O-2 bonds and the calculated cohesive energy indicates that the O-2 state is stable. The results are in good agreement with the kinetic analysis.

Stoichiometric defects in semi-insulating GaAs

The influences of arsenic interstitials and dislocations on the lattice parameters of undoped semi-insulating (SI) GaAs single crystals were analyzed. It was shown that the dislocations in such crystals serve as effective gettering sites for arsenic interstitials due to the deformation energy of dislocations. The average excess arsenic in GaAs epilayers grown by molecular-beam epitaxy (MBE) at low temperatures (LT) is about 1%, and the lattice parameters of these epilayers are larger than those of liquid-encapsulated Czochralski-grown (LEG) SI-GaAs by about 0.1%. The atomic ratio, [As]/([Ga] + [As]), in SI-GaAs grown by low-pressure (LP) LEC is the nearest to the strict stoichiometry compared with those grown by high-pressure (HP) LEC and vertical gradient freeze (VGF). After multiple wafer annealing (MWA), the crystals grown by HPLEC become closer to be strictly stoichiometric.

Nondestructive measurements of stoichiometry in undoped semi-insulating gallium arsenide by x-ray bond method

The influences of microdefects and dislocations on the lattice parameters of undoped semi-insulating GaAs single crystals were analyzed, and a novel nondestructive method for measuring stoichiometry in undoped semi-insulating GaAs was established in this letter. The comparison of this method with coulometric titration indicates that the method of nondestructive measurements is indeed convenient and reliable. (C) 1996 American Institute of Physics.

Dislocations and precipitates in semi-insulating gallium arsenide revealed by ultrasonic Abrahams-Buiocchi etching

The dislocations and precipitates in SI-GaAs single crystals are revealed by ultrasonic-aided Abrahams-Buiocchi etching (USAB), and the etch pits are observed and measured by metalloscope and scanning electron microscope (SEM) equipped with an energy dispersive X-ray spectrometer (EDS), respectively. The size of etch pit revealed by USAB etching is about 1 order of magnitude smaller than that revealed by molten KOH. The amount of arsenic atoms in the dislocation-dense zone is about 1% larger than that in an adjacent dislocation-free zone measured by EDS attached to SEM, which indicates that the excess arsenic atoms adjacent to the dislocation-dense zone are attracted to the dislocations and precipitate there due to the deformation energy.

Electrical properties of semi-insulating GaAs grown from the melt under microgravity conditions

A technologically important undoped semi-insulating (SI) GaAs single crystal was successfully grown in the Chinese recoverable satellite as far as we know for the first time by using a similar growth configuration described previously. The experimental results proved that the space SI GaAs crystals have a lower density of defects and defect-impurity complexes as well as a better uniformity.

Verification of EL2 electronic absorption effect on charge transfer in semi-insulating GaAs

The electronic absorption of EL2 centers has been clarified to be related to the electron acid hole photoionizations, and the transition from its ground state to metastable state, respectively. Under an illumination with a selected photon energy in the near infrared region, these three processes with different optical cross sections will show different kinetics against the illumination time. It has recently been shown that the photosensitivity (measured under 1.25 eV illumination) of the local vibrational mode absorption induced by some deep defect centers in SI-GaAs is a consequence of the electron and hole photoionizations of EL2. This paper directly measures the kinetics of the electronic transition associated with EL2 under 1.25 eV illumination, which implies the expected charge transfer among different charge states of the EL2 center. A calculation based on a simple rate equation model is in good agreement with the experimental results.

Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer

The influence of the sidegate voltage on the Schottky barrier in the ion-implanted active layer via the Schottky pad on the semi-insulating GaAs substrate was observed, and the mechanism for such an influence was proposed. (C) 1996 American Institute of Physics.

Non-stoichiometry Related Deep Level Defects in Semi-insulating InP

Semi-insulating (SI) InP materials have been prepared under different stoichiometric conditions, including Fe-doping in indium-rich melt and high temperature annealing undoped wafer in phosphorus and iron phosphide ambients. Deep level defects related with non-stoichiometry have been detected in the SI-InP samples. A close relationship between the material quality of electrical property and native deep defects has been revealed by a comprehensive study of defects in as-grown Fe-doped and annealed undoped SI-InP materials. Fe-doped SI-InP material with low carrier mobility and poor thermal stability contains a high concentration of deep defects with energy levels in the range of 0.1-0.4eV. The suppression of the defects by high temperature annealing undoped InP leads to the manufacture of high quality SI-InP with high mobility and good electrical uniformity. A technology for the growth of high quality SI-InP through stoichiometry control has been proposed based on the results.

Influence of Fe Doping Concentration on Some Properties of Semi-Insulating InP

Properties of Fe-doped semi-insulating (SI) InP with different iron concentrations are studied by using Hall effect, current-voltage (I-V), photoluminescence spectroscopy (PL) and photocurrent spectroscopy (PC) measurements. I-V characteristics of SI InP strongly depend on Fe doping concentration. Fe doping concentration also influences optical properties and defective formation in as-grown SI InP. Band-gap narrowing phenomenon and defects in Fe doped SI InP are studied using PI and PC.

Preparation of Semi-Insulating Material by Annealing Undoped InP

Semi-insulating (SI) InP wafers of 50 and 75mm in diameter can be obtained by annealing of undoped liquid encapsulated Czochralski (LEC) InP at 930 ℃ for 80h. The annealing ambient can be pure phosphorus (PP) or iron phosphide (IP). The IP-SI InP wafers have good electrical parameters and uniformity of whole wafer. However, PP-SI InP wafers exhibit poor uniformity and electrical parameters, Photoluminescence which is subtle to deep defect appears in IP-annealed semi-insulating InP. Traps in annealed SI InP are detected by the spectroscopy of photo-induced current transient. The results indicate that there are fewer traps in IP-annealed undoped SI InP than those in as-grown Fe-doped and PP-undoped SI-undoped SI InP. The formation mechanism of deep defects in annealed undoped InP is discussed.