PHOTOINDUCED TRANSIENT SPECTROSCOPY PITS STUDY ON UNDOPED LEC GROWN SEMI-INSULATING GAAS


Autoria(s): FANG ZQ; SHAN L; SCHLESINGER TE; MILNES AG
Data(s)

1989

Identificador

http://ir.semi.ac.cn/handle/172111/14493

http://www.irgrid.ac.cn/handle/1471x/101281

Idioma(s)

英语

Fonte

FANG ZQ; SHAN L; SCHLESINGER TE; MILNES AG.PHOTOINDUCED TRANSIENT SPECTROSCOPY PITS STUDY ON UNDOPED LEC GROWN SEMI-INSULATING GAAS,SOLID-STATE ELECTRONICS ,1989,32(5):405-411

Palavras-Chave #半导体器件
Tipo

期刊论文