Continuous-wave and Q-switched operation of a resonantly pumped Ho:YAlO3 laser

We demonstrated continuous-wave ( CW) and Q-switched operation of a room-temperature Ho: YAlO3 laser that is resonantly end-pumped by a diode-pumped Tm: YLF laser at 1.91 mu m. The CW Ho: YAlO3 laser generated 5.5 W of linearly polarized (E parallel to c) output at 2118 nm with beam quality factor of M-2 approximate to 1.1 for an incident pump power of 13.8 W, corresponding to optical-to-optical conversion efficiency of 40%. Up to 1-mJ energy per pulse at pulse repetition frequency (PRF) of 5 kHz, and the maximum average power of 5.3-W with FWHM pulse duration of 30.5 ns at 20 kHz were achieved in Q-switched mode. (C) 2008 Optical Society of America.

Diode-pumped Q-switched Tm:YAP laser with a pump recycling scheme

We reported on a diode end-pumped AO Q-switched Tm:YAP laser at 1937 nm. The average output power was 3.9 W, with a slope efficiency of 29.4% and optical-optical conversion efficiency of 21.6% at a 5-kHz repetition rate. The temperature dependency of the output power and the pulse width at different repetition rates were investigated in details.

Diode-pumped continuous wave and Q-switched operation of a c-cut Tm,Ho:YAlO3 laser

We report on a diode-pumped, cryogenic and room temperature operation of a Tm,Ho:YAlO3 (c-cut) laser. In a temperature of 77 K, an optical-optical conversion efficiency of 27% and a slope efficiency of 29% were achieved with the maximum continuous-wave (CW) output power of 5.0 W at 2.13 mu m. Acousto-optic switched operation was performed at pulse repetition frequency (PRF) from 1 kHz to 10 kHz, the highest pulse energy of 3.3 mJ in a pulse duration of 40 ns was obtained. In room temperature (RT), the maximum CW power of Tm,Ho:YAlO3 laser was 160 mW with a slope efficiency of 11% corresponding to the absorbed pump power. (C) 2008 Optical Society of America.

Room temperature efficient actively Q-switched Ho:YAP laser

We report on efficient actively Q-switched Ho: YAP laser double-pass pumped by a 1.91-mu m laser. At room temperature, when the incident pump power was 20.9 W, a maximum average output power of 10.9W at 2118 nm was obtained at the repetition rate of 10 kHz, and this corresponds to a conversion efficiency of 52.2% and a slope efficiency of 63.5%. Moreover, a maximum pulse energy of similar to 1.1 mJ and a minimum pulse width of 31 ns were achieved, with the peak power of 35.5 kW. (C) 2009 Optical Society of America

落叶栎树在中国的地理替代分布及其气候制约

栎属（Quercus L.）按落叶习性可自然分为落叶类型和常绿类型，我国落叶栎类共有20个种和9个变种。落叶栎是栎属中较为进化的一个类群，源于横断山区和云贵高原;除新疆外，全国各省都有落叶栎的天然分布，一些亲缘关系密切的树种之间呈现出较为明显的地理替代分布格局。本研究的目的在于：（1）应用BIOCLIM模型模拟预测落叶栎类植物的潜在分布区，分析其目前的分布格局以及下一步的发展趋势;（2）分析造成落叶栎树地理替代分布格局的主导气候因子，探讨气候因子对不同落叶栎树种地理分布格局的制约作用。 本文以16个在中国具有成片天然分布区的落叶栎树种（包括变种）为研究对象，利用已核对的标本数据以及13个栅格化环境变量图层（分辨率为1km×1km），按照分类（全国广布型、南方广布型、南方狭域型和北方狭域型）和不分类（全部16种）两种处理方式，通过BIOCLIM模型模拟得出了它们的潜在核心分布区和潜在边缘分布区。在运行模型之前，除必选的海拔高程图层外，采用了主成分分析（PCA）的方法从30个候选的气候变量图层中筛选出对相应落叶栎树种的地理分布格局有较大影响的12个图层作为输入图层。然后，本文通过比较两种处理所得模拟结果的ROC（Receiver Operator Characteristic）曲线下方面积AUC（Area Under the Curve），同时结合文献分析来推测不同落叶栎树种地理分布格局的稳定性及发展趋势。结果表明，在无人类活动干扰且种源传播不受阻碍的情况下，全国广布型和南方广布型落叶栎目前的分布格局在维持稳定的基础上有向周边地区扩展的趋势;南方狭域型和北方狭域型落叶栎的分布格局则基本保持稳定，短期内发生扩散的可能很小。 论文中计算了每个落叶栎树种所在分布范围的气候指标（共11个），以便进行下一步的研究。以蒙古栎（Q. mongolica）、辽东栎（Q. wutaishanica）与槲栎（Q. aliena）、锐齿槲栎（Q. aliena var. acuteserrata）、北京槲栎（Q. aliena var. pekingensis）这两组地理替代系列为研究对象，分别采用独立样本t检验和单因素方差分析的方法，分析了气候因子对其地理替代分布格局的主导作用。结果表明，冬季的低温、较高的气温年较差和大陆度是蒙古栎向东北替代辽东栎的主要原因;槲栎向北被北京槲栎和锐齿槲栎替代的主要原因是生长季高温和冬季高温对其分布的双重制约;除最暖月（7月）最高温外，北京槲栎的各项水热指标与另两种槲栎均存在极显著差异，对冬季低温和较大的年较差的适应可能是限制其向南分布的主要原因。 本研究最后部分的内容是对不同类型落叶栎分布区的气候参数进行的主成分分析。结果表明，生长季温度是制约落叶栎分布的最主要的气候因子;寒冷程度和冬季的低温则对其在大尺度范围的扩散有较大影响;另外，降水、年较差与大陆度对落叶栎的向北分布也起着重要的作用。

High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns

We have demonstrated a compact and an efficient passively Q-switched microchip Nd:YVO4 laser by using a composite semiconductor absorber as well as an output coupler. The composite semiconductor absorber was composed of an LT (low-temperature grown) In0.25Ga0.75As absorber and a pure GaAs absorber. To our knowledge, it was the first demonstration of the special absorber for Q-switching operation of microchip lasers. Laser pulses with durations of 1.1 ns were generated with a 350 mu m thick laser crystal and the repetition rate of the pulses was as high as 4.6 MHz. The average output power was 120 mW at the pump power of 700 mW. Pulse duration can be varied from 1.1 to 15.7 ns by changing the cavity length from 0.45 to 5 mm. Pulses with duration of 1.67 and 2.41 ns were also obtained with a 0.7 mm, thick laser crystal and a 1 mm thick laser crystal, respectively. (C) 2007 Elsevier GmbH. All rights reserved.

Comparison of Q-factors between TE and TM modes in 3-D microsquares by FDTD simulation

Mode characteristics of three-dimensional (3-D) microsquare resonators are investigated by finite-difference time-domain (FDTD) simulation for the transverse electric (TE)-like and the transverse magnetic (TM)-like modes. For a pillar microsquare with a side length of 2 pin in air, we have Q-factors about 5 X. 103 for TM-like modes at the wavelength of 1550 run, which are one order larger than those of TE-like modes, as vertical refractive index distribution is 3.17/3.4/3.17 and the cororresponding center layer thickness is 0.2 mu m. The mode field patterns show that TM-like modes have much weaker vertical radiation coupling loss than TE-like modes. TM-like modes can have high Q-factors in a microsquare with weak vertical field confinement.

Design of quantum cascade microcavity lasers based on Q factor versus etching depth

The choice of the etching depth for semiconductor microcavities is a compromise between a high Q factor and a difficult technique in a practical fabricating process. In this paper, the influences of the etching depth on mode Q factors for mid-infrared quantum cascade microcylinder and microsquare lasers around 4.8 and 7.8 mu m are simulated by three-dimensional (3D) finite-difference time-domain (FDTD) techniques. For the microcylinder and the microsquare resonators, the mode Q factors of the whispering-gallery modes (WGMs) increase exponentially and linearly with the increase in the etching depth, respectively Furthermore, the mode Q factors of some higher order transverse WGMs may be larger than that of the fundamental transverse WGM in 3D microsquares. Based on the field distribution of the vertical multilayer slab waveguide and the mode Q factors versus the etching depth, the necessary etching depth is chosen at the position where the field amplitude is 1% of the peak value of the slab waveguide. In addition, the influences of sidewall roughness on the mode Q factors are simulated for microsquare resonators by 2D FDTD simulation. (C) 2009 Optical Society of America

High efficiency passively Q-switched mode-locking Nd:GdVO4 laser with LT-In0.25Ga0.75As saturable absorber

The generation of passively Q-switched mode-locking operation with 100% modulation depth has been observed from a diode-pumped Nd GdVO4 laser with a low temperature In0.25Ga0.75As saturable absorber, which was grown by the metal-organic chemical-vapor deposition technique and acted as saturable absorber as well as output coupler. The repetition rate and pulse duration of the mode-locked pulses concentrated in the Q-switch envelop were 455 MHz and 12 ps, respectively. The average output power was 1.8 W and the slope efficiency was 36%. (C) 2009 Elsevier B.V. All rights reserved.

Passive Q-switched mode locking of double-clading Yb : fiber laser with ion-implanted GaAs

We report the technique of the ion-implanted semi-insulating GaAs wafer used for passive Q-switched mode locking in double-cladding Yb:fiber laser. The wafer was implanted with 400-keV energy, 10(16)/cm(2) dose As+ ions, and was annealed at 600degreesC for 20 min. At the pump power of 5W, we achieved output power of 200mW. The repetition rate of envelope of Q-switched mode locking is 50-kHz with a FWHM envelope of 4mus. The repetition rate of mode locked pulse train was found to be 15-MHz. This is the first report of such a kind of laser to the best of our knowledge.

Antiphase state in passively Q-switched Yb : YAG microchip multimode lasers with a saturable absorber GaAs

We report on recent experimental results of the spontaneous antiphase dynamics that occurs in a laser-diode-pumped multimode passively Q-switched microchip Yb:YAG (where YAG is yttrium aluminum garnet) lasers with a saturable absorber GaAs. We observe that the pulse sequence of the first mode characterized by one, two, and three pulses as a group and all the modes display an antiphase state as the pumping ratio rises. We modify the multimode rate equations to account for nonlinear absorption due to GaAs in the presence of spatial hole burning. We perform numerical simulations based on the proposed rate equations and reproduce the observed antiphase state of two and three active modes.

Observation of antiphase states in a passively Q-switched multimode microchip Yb : YAG laser with a GaAs saturable absorber

Antiphase dynamics has been observed experimentally for the laser modes operation in a laser-diode-pumped Q-switched microchip Yb:YAG laser with GaAs as a saturable absorber in the presence of spatial hole-burning. The Q-switched pulses sequences of two modes at different pump power have been obtained. The experimental results have shown that the pulses sequences displayed classic antiphase dynamics. (C) 2003 Elsevier B.V. All rights reserved.

Passive Q-switching modelocked Yb3+-doped fibre laser with GaAs absorber grown at low temperature

GaAs absorber was grown at low temperature (550degreesC) by metal organic chemical vapour deposition (MOCVD) and was used as an output coupler with which we realized Q-switching modelocked Yb3+-doped fibre laser. The shortest period of the envelope of the Q-switched modelocking is about 3mus. The modelocking threshold is 4.27W and the highest average output pulse power is 290 mW. The modelocking frequency is 12 MHz.