Passive Q-switched mode locking of double-clading Yb : fiber laser with ion-implanted GaAs


Autoria(s): Wang YG; Ma XY; Fu SG; Fan WD; Li Q
Data(s)

2004

Resumo

We report the technique of the ion-implanted semi-insulating GaAs wafer used for passive Q-switched mode locking in double-cladding Yb:fiber laser. The wafer was implanted with 400-keV energy, 10(16)/cm(2) dose As+ ions, and was annealed at 600degreesC for 20 min. At the pump power of 5W, we achieved output power of 200mW. The repetition rate of envelope of Q-switched mode locking is 50-kHz with a FWHM envelope of 4mus. The repetition rate of mode locked pulse train was found to be 15-MHz. This is the first report of such a kind of laser to the best of our knowledge.

Identificador

http://ir.semi.ac.cn/handle/172111/8060

http://www.irgrid.ac.cn/handle/1471x/63624

Idioma(s)

英语

Fonte

Wang, YG; Ma, XY; Fu, SG; Fan, WD; Li, Q .Passive Q-switched mode locking of double-clading Yb : fiber laser with ion-implanted GaAs ,ACTA PHYSICA SINICA,JUN 2004,53 (6):1810-1814

Palavras-Chave #半导体器件 #ion-implanted GaAs
Tipo

期刊论文