Passive Q-switching modelocked Yb3+-doped fibre laser with GaAs absorber grown at low temperature
| Data(s) |
2005
|
|---|---|
| Resumo |
GaAs absorber was grown at low temperature (550degreesC) by metal organic chemical vapour deposition (MOCVD) and was used as an output coupler with which we realized Q-switching modelocked Yb3+-doped fibre laser. The shortest period of the envelope of the Q-switched modelocking is about 3mus. The modelocking threshold is 4.27W and the highest average output pulse power is 290 mW. The modelocking frequency is 12 MHz. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Feng, XM; Wang, YG; Liu, YY; Lan, YS; Lin, T; Wang, J; Wang, XW; Fang, GZ; Ma, XY; Wang, YG; Zhang, ZG .Passive Q-switching modelocked Yb3+-doped fibre laser with GaAs absorber grown at low temperature ,CHINESE PHYSICS LETTERS,FEB 2005,22 (2):391-393 |
| Palavras-Chave | #半导体器件 #ND-YAG LASER |
| Tipo |
期刊论文 |
