Effects of rapid thermal annealing on the optical properties of GaNxAs1-x/GaAs single quantum well structure grown by molecular beam epitaxy

The effect of rapid thermal annealing (RTA) on the optical properties of GaNxAs1-x/GaAs strained single quantum well (SQW) was studied by low-temperature photoluminescence (PL). The GaNxAs1-x/GaAs SQW structures were prepared by dc active nitrogen plasma assisted molecular beam epitaxy. PL measurements on a series of samples with different well widths and nitrogen compositions were used to evaluate the effects of RTA. The annealing temperature and time were varied from 650 to 850 degrees C and 30 s to 15 min, respectively. Remarkable improvements of the optical properties of the samples were observed after RTA under optimum conditions. The interdiffusion constants have been calculated by taking into account error function diffusion and solving the Schrodinger equation. The estimated interdiffusion constants D are 10(-17)-10(-16) cm(2)/s for the earlier annealing conditions. Activation energies of 6-7 eV are obtained by fitting the temperature dependence of the interdiffusion constants. (C) 2000 American Institute of Physics. [S0021-8979(00)10401-3].

Outer space grown semi-insulating GaAs and its applications

GaAs single crystal has been grown in recoverable satellite. Hall measurements indicate that the GaAs shows semi-insulating behavior. The structural properties of the crystal have been improved obviously, and their uniformity has been improved as well. The stoichiometry and its distribution in space-grown GaAs are improved greatly compared with the GaAs single crystal grown terrestrially. The properties of integrated circuits made by direct ion-implantation on space-grown GaAs are better than those made on ground-grown materials. These results show that the stoichiometry in semi-insulating GaAs seriously affects the properties of related devices.

Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F

Hall effect, photoluminescence spectroscopy (PL), mass spectroscopy and X-ray diffraction have been used to study bulk ZnO single crystal grown by a closed seeded chemical vapor transport method. Enhancement of n-type electrical conduction and increase of nitrogen concentration are observed of the ZnO samples after high temperature annealing. The results suggest that vacancy is dominant native defect in the ZnO material. These phenomena are explained by a generation of shallow donor defect and suppression of deep level defects in ZnO after the annealing.

Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I

Hall effect, photoluminescence (PL), infrared absorption, deep level transient spectroscopy (DLTS), and Raman scattering have been used to study property and defects of ZnO single crystal grown by a chemical vapor transport method (CVT). As-grown ZnO is N type with free electron density Of 10(16)-10(17)cm(-3). It has a slight increase after 900 degrees C annealing in oxygen ambient. The DLTS measurement revealed four deep level defects with energy at 0.30eV, 0.50eV, 0.68eV and 0.90eV in the as-grown ZnO sample, respectively. After the high temperature annealing, only the 0.5eV defect survive and has a concentration increase. PL results of the as-grown and annealed ZnO indicate that the well-known green emission disappear after the annealing. The result suggests a correlation between the 0.68eV defect and the green PL peak. Results of P-doped ZnO were also compared with the undoped ZnO sample. The nature of the defects and their influence on the material property have been discussed.

Growth of ZnO single crystal by chemical vapor transport method

ZnO crystals were grown by CVT method in closed quartz tube under seeded condition. Carbon was used as a transport agent to enhance the chemical transport of ZnO in the growth process. ZnO single crystals were grown by using GaN/sapphire and GaN/Si wafer as seeds. The property and crystal quality of the ZnO single crystals was studied by photoluminescence spectroscopy and X-ray diffraction technique.

Growth of high quality semi-insulating InP single crystal by suppression of compensation defects

Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated current spectroscopy. Correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in SI-InP were revealed. An optimized crystal growth condition for high quality SI-InP was demonstrated based on the experimental results.

Donor defect in P-diffused bulk ZnO single crystal

A high concentration of shallow donor defect is formed in P-diffused ZnO single crystals. X-ray photoelectron spectroscopy analysis indicates that P atom occupy different lattice site at different diffusion temperature. Nature of the donor defect has been discussed.

In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy

The interface properties of GaNxAs1-x/GaAs single-quantum well is investigated at 80 K by reflectance difference spectroscopy. Strong in-plane optical anisotropies (IPOA) are observed. Numerical calculations based on a 4 band K . P Hamiltonian are performed to analyze the origin of the optical anisotropy. It is found that the IPOA can be mainly attributed to anisotropic strain effect, which increases with the concentration of nitrogen. The origin of the strain component epsilon(xy) is also discussed.

Tunable parametric fluorescence using a single crystal

In this paper, we investigate the mechanism of tunable parametric superfluorescence (PS) based on the second harmonic generation and parametric processes taking place in the same nonlinear crystal (BBO). The tunable spectra of PS has been generated between 480 nm and 530 nm, which is pumped by the second-harmonic from the high-power Ti: sapphire laser system at 1 kHz repetition rate. We present the generation mechanism of PS theoretically and simulate the process of PS ring using the amplification transfer function. The experiment and the theory show that PS will appear when the phase matching angle for second-harmonic generation is close to the optimal pump angle for optical parametric generation, and then the tunable spectra of PS are generated by slightly adjusting the crystal angle. The result provides a theoretical basis for controlling the generation of PS and quantum entanglement states, which is of great significance for the development of quantum imaging, quantum communications and other applieations.

POWER DEPENDENCE OF THE RECOMBINATION PROCESSES IN THE INXGA1-XAS/GAAS SINGLE-QUANTUM-WELL

We have measured the power dependence of the photoluminesence spectra from a set of strained InxGa1-xAs/GaAs single quantum wells. The result shows that the excitation power has important effect on the carrier recombination processes. When the power increases from 0.5 to 14 mW, the photoluminescence from the barrier becomes more intense than that from the well and the trapping efficiency decreases. At high excitation level, the ratio of the radiative recombination rate to the nonradiative recombination rate of the barrier increases ten times than that at lower excitation level, while it only doubles for the well.

Deviation from the stoichiometric composition of single-crystal 'Er2Co17'

The deviation from the stoichiometric composition of single-crystal 'Er2Co17' has been determined by theoretical analysis. It is found that the composition of this single-crystal 'Er2Co17' is rich in cobalt, and its real composition is suggested to be Er2-deltaCo17+2 delta (delta = 0.14) on the basis of a comparison of calculations based on the single-ion model with a series of experiments. The values of the Er-Co exchange field H-ex and the crystalline-electric-field (CEF) parameters A(n)(m) at the rare-earth (R) site in the 'Er2Co17' compound are also evaluated at the same time. The experiments provide the following data: the temperature dependence of the spontaneous magnetization of the compounds and the normalized magnetic moment of the Er ion, the magnetization curves dong the crystallographic axes at 4.2 K and 200 K, and the temperature dependence of the magnetization along the crystallographic axes in a field of 4 T.

Lapping technique of InP single crystal wafer

The wafer processing of Indium Phosphide (InP) is so important that it is getting more and more attentions. Lapping is a basic step just following the ingot cutting. In this paper, the influences of various processing parameters on the lapped wafer quality and lapping rate have been checked, the double-crystal X-ray diffraction results about lapped wafers also were presented here. According to the experimental results, the optimum lapping conditions have been obtained.

Electrical properties of semi-insulating GaAs grown from the melt under microgravity conditions

A technologically important undoped semi-insulating (SI) GaAs single crystal was successfully grown in the Chinese recoverable satellite as far as we know for the first time by using a similar growth configuration described previously. The experimental results proved that the space SI GaAs crystals have a lower density of defects and defect-impurity complexes as well as a better uniformity.