In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy

The interface properties of GaNxAs1-x/GaAs single-quantum well is investigated at 80 K by reflectance difference spectroscopy. Strong in-plane optical anisotropies (IPOA) are observed. Numerical calculations based on a 4 band K . P Hamiltonian are performed to analyze the origin of the optical anisotropy. It is found that the IPOA can be mainly attributed to anisotropic strain effect, which increases with the concentration of nitrogen. The origin of the strain component epsilon(xy) is also discussed.

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We thank Dr. Yuefa Li to provide the samples. This work is supported by the 973 program (Grant Nos. 2006CB604908 and 2006CB921607), and the National Natural Science Foundation of China (Grant Nos. 60625402 and 60990313)

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We thank Dr. Yuefa Li to provide the samples. This work is supported by the 973 program (Grant Nos. 2006CB604908 and 2006CB921607), and the National Natural Science Foundation of China (Grant Nos. 60625402 and 60990313)