FBG pressure sensor based on the double shell cylinder with temperature compensation

A novel fiber Bragg grating (FBG) pressure sensor based on the double shell cylinder with temperature compensation is presented. in the sensing scheme, a sensing FBG is affixed in the tangential direction on the outer surface of the inner cylinder, and another FBG is affixed in the axial direction to compensate the temperature fluctuation. Based on the theory of elasticity, the theoretical analysis of the strain distribution of the sensing shell is presented. Experiments are carried out to test the performance of the sensor. A pressure sensitivity of 0.0937 nm/MPa has been achieved. The experimental results also demonstrate that the two FBGs have the same temperature sensitivity, which can be utilized to compensate the temperature induced wavelength shift during the pressure measurement. (C) 2008 Elsevier Ltd. All rights reserved.

Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure

Electrical properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN structure are investigated by solving coupled Schrodinger and Poisson equation self-consistently. Our calculations show that the two-dimensional electron gas (2DEG) density will decrease with the thickness of the second barrier (AlyGa1-yN) once the AlN content of the second barrier is smaller than a critical value y(c), and will increase with the thickness of the second barrier (AlyGa1-yN) when the critical AlN content of the second barrier y(c) is exceeded. Our calculations also show that the critical AlN content of the second barrier y(c) will increase with the AlN content and the thickness of the first barrier layer (AlxGa1-xN).

Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction

The full-width at half-maximum (FWHM) of an x-ray rocking curve (XRC) has been used as a parameter to determine the tilt and twist angles of GaN layers. Nevertheless, when the thickness of GaN epilayer reaches several microns, the peak broadening due to curvature becomes non-negligible. In this paper, using the (0 0 l), l = 2, 4, 6, XRC to minimize the effects of wafer curvature was studied systematically. Also the method to determine the tilt angle of a curved GaN layer was proposed while the Williamson-Hall plot was unsuitable. It was found that the (0 0 6) XRC-FWHM had a significant advantage for high-quality GaN layers with the radius curvature of r less than 3.5 m. Furthermore, an extrapolating method of gaining a reliable tilt angle has also been proposed, with which the calculated error can be improved by 10% for r < 2 m crystals compared with the (0 0 6) XRC-FWHM. In skew geometry, we have demonstrated that the twist angles deriving from the (2 0 4) XRC-FWHM are in accord with those from the grazing incidence in-plane diffraction (IP-GID) method for significantly curved samples.

The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers

Two emission peaks were observed in the low temperature photoluminescence (LTPL) spectra of an InGaN/GaN multiple quantum well (MQW) structure before and after nanopillar fabrication. After nanopillar fabrication it is found that among the two peaks the longer wavelength peak exhibits a clear blue shift and has a much stronger enhancement in LTPL intensity than the shorter one. Combined with x-ray diffraction and spatially resolved cathodoluminescence analyses, the difference induced by nanopillar fabrication is ascribed to different strain relaxation states in the lower and upper quantum well layers. It is found that the lower QW layers of the as-grown MQW which causes the longer wavelength PL peak are more strained, while the upper ones are almost fully strain-relaxed. Therefore, the nanopillar fabrication induces much less strain relaxation in the upper part of the MQW than in the lower one.

A selective area growth double stack active layer electroabsorption modulator integrated with a distributed feedback laser

A new method for fabricating electroabsorption modulator integrated with a distributed feedback laser (EML) was proposed. With the method we fabricated a selective area growth double stack active layer EML (SAG-DSAL-EML). Through comparing with other fabrication methods of EMLs, the characters and the merits of the new method presented in this paper were discussed.

Passive Q-switched mode locking of double-clading Yb : fiber laser with ion-implanted GaAs

We report the technique of the ion-implanted semi-insulating GaAs wafer used for passive Q-switched mode locking in double-cladding Yb:fiber laser. The wafer was implanted with 400-keV energy, 10(16)/cm(2) dose As+ ions, and was annealed at 600degreesC for 20 min. At the pump power of 5W, we achieved output power of 200mW. The repetition rate of envelope of Q-switched mode locking is 50-kHz with a FWHM envelope of 4mus. The repetition rate of mode locked pulse train was found to be 15-MHz. This is the first report of such a kind of laser to the best of our knowledge.

Silica-based 64-channel arrayed waveguide gratings with double functions

Silica-based 64-channel arrayed waveguide gratings (AWGs) with double functions and 0.4 nm (50 GHz) channel spacing have been designed and fabricated. On the same component, Gauss and flat-top output response spectra are obtained simultaneously. The test results show that when the insertion loss ranges from 3.5 dB to 6 dB,the crosstalk is better than -34 dB, the 1 dB bandwidth is 0.12 nm, the 3 dB bandwidth is 0,218 nm, and the polarization-dependent loss (PDL) is less than 0.5 dB for Gauss response. When the insertion loss ranges,from 5.8 dB to 7.8 dB, the crosstalk is better than -30 dB, the 1 dB bandwidth is 0.24 nm, the 3 dB bandwidth is 0.33 nm, and the PDL is less than 0.2 dB for flat-top response.

Double synaptic weight neuron theory and its application

In this paper, a novel mathematical model of neuron-Double Synaptic Weight Neuron (DSWN)(l) is presented. The DSWN can simulate many kinds of neuron architectures, including Radial-Basis-Function (RBF), Hyper Sausage and Hyper Ellipsoid models, etc. Moreover, this new model has been implemented in the new CASSANN-II neurocomputer that can be used to form various types of neural networks with multiple mathematical models of neurons. The flexibility of the DSWN has also been described in constructing neural networks. Based on the theory of Biomimetic Pattern Recognition (BPR) and high-dimensional space covering, a recognition system of omni directionally oriented rigid objects on the horizontal surface and a face recognition system had been implemented on CASSANN-II neurocomputer. In these two special cases, the result showed DSWN neural network had great potential in pattern recognition.

The quantum tunnelling between two-component Bose-Einstein condensates in a double-well configuration

We examine in terms of exact solutions of the time-dependent Schrodinger equation, the quantum tunnelling process in Bose-Einstein condensates of two interacting species trapped in a double well configuration. Based on the two series of time-dependent SU(2) gauge transformations, we diagonalize the Hamilton operator and obtain analytic time-evolution formulas of the population imbalance and the berry phase. the particle population imbalance (a(L)(+)aL - a(R)(+)a(R)) of species A between the two wells is studied analytically.

The quantum tunneling between two-component Bose-Einstein condensates in a double-well configuration

In terms of exact solution of the time-dependent Schrodinger equation. we examine the quantum tunneling process in Bose condensates of two interacting species trapped in a double well configuration. We use the two series of time-dependent SU(2) gauge transformation to diagonalize the Hamilton operator obtain analytic time-evolution formulas of the population imbalance and the berry phase. The particle population imbalance (a(L)(+)a(L) - a(R)(+)a(R)) of species A between the two wells is studied analytically.

Current-voltage characteristics in strongly correlated double quantum dots

We have studied the current-voltage properties of a double quantum dot (DQD) connected by leads in arrangements that vary from series to symmetrical parallel configurations, in the presence of strong intradot Coulomb interaction. The influences of the connecting configurations and the difference between dot levels on the magnitude and symmetry of the total current are examined. We find that the connecting configurations of the dots can determine the number of the current paths and in turn determine the magnitude of the current, while the coupling strengths between the dots and the leads together with the difference of dot levels determine the current-voltage symmetry. The negative differential conductance observed in serial DQD can be explained in terms of the reduction of the current paths. (c) 2005 American Institute of Physics.

A new type of photoelectric response in a double barrier structure with a wide quantum well

We have calculated the photoelectric response in a specially designed double barrier structure. It has been verilied that a transfer of the internal photovoltaic effect in the quantum well to the tunnelling transport through above-barrier quasibound states of the emitter barrier may give rise to a remarkable photocurrent.

Dynamics of spin-dependent tunneling through a semiconductor double-barrier structure

The dynamics of spin-dependent tunneling through a nonmagnetic semiconductor double-barrier structure is studied including the k(3) Dresselhaus spin orbit coupling is solved by the time-dependent Schrodinger equation with a developed method for the finite-difference relaxation. The resonant peak and quasibound level lifetime are determined by the in-plane wave vector and the applied electric field. The buildup time and decay lifetime of resonant probability amplitude are different for the spin-down and spin-up electrons due to the Dresselhaus spin-orbit coupling. Further investigation shows that the steady spin-polarization in both the well and collector regions has been obtained in the time domain. (C) 2007 American Institute of Physics.

Double hydrogenic impurities in double quantum dots

The ground states and degree of entanglement of double hydrogenic impurities in a pair of vertically stacked InGaAs/GaAs quantum dots are studied with a proposed diagonalization technique. It is found that at short barrier widths, the entanglement is small due to the coupling between the intra- and interdot orbitals. At large barrier widths, large entanglement occurs.

Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers

Double-state lasing phenomena are easily observed in self-assembled quantum dot (QD) lasers. The effect of inter-level relaxation rate and cavity length on the double-state lasing performance of QD lasers is investigated on the basis of a rate equation model. Calculated results show that, for a certain cavity length, the ground state (GS) lasing threshold current increases almost linearly with the inter-level relaxation lifetime. However, as the relaxation rate becomes slower, the ratio of excited state (ES) lasing threshold current over the GS one decreases, showing an evident exponential behavior. A relatively feasible method to estimate the inter-level relaxation lifetime, which is difficult to measure directly, is provided. In addition, fast inter-level relaxation is favorable for the GS single-mode lasing, and leads to lower wetting layer (WL) carrier occupation probability and higher QD GS capture efficiency and external differential quantum efficiency. Besides, the double-state lasing effect strongly depends on the cavity length. (c) 2007 Elsevier B.V. All rights reserved.