Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure

Electrical properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN structure are investigated by solving coupled Schrodinger and Poisson equation self-consistently. Our calculations show that the two-dimensional electron gas (2DEG) density will decrease with the thickness of the second barrier (AlyGa1-yN) once the AlN content of the second barrier is smaller than a critical value y(c), and will increase with the thickness of the second barrier (AlyGa1-yN) when the critical AlN content of the second barrier y(c) is exceeded. Our calculations also show that the critical AlN content of the second barrier y(c) will increase with the AlN content and the thickness of the first barrier layer (AlxGa1-xN).

Knowledge Innovation Project of Chinese Academy of Sciences YYYJ-0701-02 National Natural Sciences Foundation of China 60576046 60606002National Basic Research Programme of China 2002CB311903 2006CB604905 513270605Supported by the Knowledge Innovation Project of Chinese Academy of Sciences under Gant No YYYJ-0701-02, the National Natural Sciences Foundation of China under Gant Nos 60576046 and 60606002, and the National Basic Research Programme of China under Gant Nos 2002CB311903, 2006CB604905 and 513270605.