Raman scattering from In1-x-yGaxAlyAs quaternary alloys

Raman scattering studies were reported of In1-x-yGaxAlyAs/InP lattice matched quaternary alloys. The quaternary alloys a.ere grown on (100) oriented InP substrates by MBE method. The composition and intensity dependence of optical phonon mode frequencies show that the quaternary alloys exhibit three-mode behavior, i.e. InAs-like, GaAs-like and AlAs-like modes. Polarization analysis of the Raman spectra shows that the LO phonon modes are Raman active in the depolarized configuration and Raman inactive in the polarized configuration. TO phonon modes were also observed due to disorder effects, resulting in the asymmetrical shapes of the Raman peaks of the optical phonons.

Corrosion inhibition of carbon steel in tetra-n-butylammonium bromide aqueous solution by benzotriazole and Na3PO4

The corrosion inhibition behavior of benzotriazole, Na3PO4 and their mixture on carbon steel in 20 wt.% (0.628 mol l(-1)) tetra-n-butylammonium bromide aerated aqueous solution was investigated by weight-loss test, potentiodynamic polarization measurement, electrochemical impedance spectroscopy and scanning electron microscope/energy dispersive X-ray techniques. The inhibition action of BTA or SP or inhibitors mixture on the corrosion of carbon steel is mainly due to the inhibition of anodic process of corrosion. The results revealed that inhibitors mixtures have shown synergistic effects at lower concentration of inhibitors. At 2 g l(-1) BTA and 2 g l(-1) SP showed optimum enhanced inhibition compared with their individual effects.

Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition

Low pressure metalorganic chemical vapour deposition (LP-MOCVD) growth and characteristics of InAssb on (100) Gasb substrates are investigated. Mirror-like surfaces with a minimum lattice mismatch are obtained. The samples are studied by photoluminescence spectra, and the output is 3.17 mu m in wavelength. The surface of InAssb epilayer shows that its morphological feature is dependent on buffer layer. With an InAs buffer layer used, the best surface is obtained. The InAssb film shows to be of n-type conduction with an electron concentration of 8.52 x 10(16) cm(-3).

耐热Mg-Gd基合金的研究和应用

本研究从二元Mg-Gd体系出发，研究了添加不同稀土元素对Mg-Gd基合金的组织、时效行为和力学性能的影响。优化出多种力学性能优异、加工性能良好和耐热性突出的新型Mg-Gd-RE-Zn-Zr系合金。在探讨Mg-Gd基合金强化机理的同时，提出了强化模型，并进行了定量分析。 在Mg-Gd二元体系中，通过对不同Gd含量的合金组织，时效行为和力学性能的研究，发现Gd不仅可以细化晶粒，还可以细化枝晶。合金中Gd的含量大于8 wt.%开始表现出时效硬化现象，Gd含量超过12wt.％时效硬化效果显著。在二元体系研究结果的基础上，选用Mg-8Gd基合金，研究了不同轻稀土元素LRE(La, Ce和Nd)和重稀土元素HRE (Y, Dy, Ho 和Er)对合金组织和性能的影响。结果表明，轻稀土中Nd的作用效果最好，其次为Ce和La。重稀土中Y和Dy的作用效果较好，其次为Ho和Er。将轻、重稀土综合考虑，在Mg-8Gd-3RE(Nd+Y)-Zr合金中，变化Nd和Y的添加量，发现Nd和Y的添加量分别为1 和2或2和1时，能够明显改善合金的综合力学性能。 研究了Mg-8Gd-2Y-1Nd-0.3Zn和Mg-8Gd-1Dy-0.3Zn压铸合金的组织和性能。研究表明，两种合金的铸造性能好，而且具有优异的抗拉性能和蠕变性能，可以满足在250℃~275℃环境下使用。进一步研究了挤压变形Mg-8Gd-2Y-1Nd-0.3Zn合金。合金成形性能好，抗拉强度和伸长率明显提高，而且改善了合金的高温抗蠕变性能，比压铸合金提高了近一个数量级。 发明了一种新型的分步固溶处理方法——振荡热处理方法，这种方法比传统的T6热处理方法更加有效，振荡热处理的主要作用是改变了凝固过程中析出相的尺寸和分布。 研究了Mg-Gd基合金凝固过程中的相析出和相转变。在合金的凝固过程中，容易生成块状的化学组成为Mg5RE（fcc结构）的共晶相；加入Zn后，凝固中容易出现片状的Mg3RE（14H型）沉淀；时效强化的主要原因是在过饱和固溶体时效过程中析出针状的50 nm~100 nm的Mg15RE3相，它与基体具有半共格的位相关系，能够有效阻止位错滑移。但随着时效时间的延长，针状析出相长大，共格关系被破坏，导致强化作用降低。而对于压铸和挤压变形合金，合金析出相的种类不变，主要的不同是挤压变形合金析出化合物的分布更加均匀，尺寸更小。 开发了高强度耐热Mg-12Gd-4Y-2Nd-0.4Zn-0.6Zr合金，这种合金经过热处理后，力学性能优良，热稳定性突出。在300 ℃的抗拉强度约为300 MPa，400 ℃的抗拉强度在100 MPa以上。本合金流动性能良好，适合于砂型铸造，在具有高温、高强度要求的镁合金制品方面极具潜力。 从金属材料强化原理出发，建立了Mg-Gd基合金的强化模型，并进行了定量分析。结果表明，析出强化是Mg-Gd基合金的主要强化方式，但实际试验值和理论值略有偏差，分析认为主要是由于β'相体积分数的变化区间较宽，且合金制备过程中不可避免地产生一些微观缺陷所致。 采用新型合金制备出了一些工业用品部件，探索了该类合金在机械、汽车和高技术等工业领域中的潜在应用

富钇稀土-铝合金制取的研究Study on Preparation of Yttrium-Rich RE-Al Alloys

我国江西龙南稀土矿是目前世界上储量最大的富钇稀土矿、研制具有多种用途的钇（Y）-铝（Al）或富钇混合稀土（Ymm）-铝中间合金，对于开拓我国龙南稀土矿的应用领域扩大稀土合金出口具有重要意义。基于这一背景并针对目前氟化物体系制取Ymm-Al合金时存在着电解温度高，腐蚀现象严重，电效偏低等缺点，本文系统开展了在氯化物熔盐体系中电解制取Ymm-Al合金的研究工作。本工作由三部分组成：在第一部分工作中，开展了熔盐电解所需要基本原料-无水稀土氯化物制取的工艺研究。利用化学分析和结构分析手段，弄清了干法氯化过程中YmmCl_3水解的机理，提出了减弱水解的措施，即YmmCl_3先在850-900 ℃灼烧1.5 + 0.2hr，脱掉吸附水并将碱式碳酸盐转化为氧化物，增加稀土氧化物的比表面。通过条件试验得到最佳工艺条件为：采用NH_4 Cl:Ymm_2 O_3 = 14:1（摩尔比）的配料比，每次投入氯化装置的原料量为0.26 - 0.36 kg, 在400-450 ℃氯化反应激烈开始后迅速降温至400 ℃以下，待物料粘结现象消失后，再行升温氯化。出料及后期控制温在475 ± 25 ℃。经过3.8 ± 0.2hr氯化，可制得水不溶物小于1%并符合熔盐电解要求的YmmCl_3原料。此新工艺与原有干法工艺相比，流程短，装置简单，不需密闭抽真空，成本低，适于制取任何量的优质熔盐电解所需氯化稀土原料。在第二部分工作中，利用上述YmmCl_3原料，以液态铝为阴极，在氯化物体系中进行熔盐电解，通过试验得出在小型试验规模制取Ymm-Al合金的最隹工艺条件为：电解质组成（重量比）40%YmmCl_3-1%NaF-59%等摩尔的NaCl-KCl；电解温度为790 ± 5 ℃；阴极电流密为0.7 - 0.02A/cm~2；电解电量为333 ± 5库仑/克铝，制得钇铝合金中Ymm含量为10 ± 2%。添加1%的NaF可消除阴极表面生成枝状物，减少合金中夹渣和熔盐中沉渣。在电解工作中，将方差分析应用于试验数据处理，方差分析结果表明，各种试验因素对电效有明显影响，试验数据可靠，试验误差在允许范围以内。在第三部分工作中，利用线性扫描伏安法测定了在最隹电解工艺条件下Y~（3+）和Ymm在液态铝及钼电极上的析出电位。测定结果表明：Y~（3+）和Ymm~（3+）在液态铝阴极上的析出电位比在钼阴极上偏正0.2 ～ 0.8伏，氟离子的加入要比不加氟时析出电位不有同程度的负移，但考虑到氟离了具有消渣作用，加入少量氟比物添加剂对提高电效有利。

Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs

For large size- and chemical-mismatched isovalent semiconductor alloys, such as N and Bi substitution on As sites in GaAs, isovalent defect levels or defect bands are introduced. The evolution of the defect states as a function of the alloy concentration is usually described by the popular phenomenological band anticrossing (BAC) model. Using first-principles band-structure calculations we show that at the impurity limit the N-(Bi)-induced impurity level is above (below) the conduction- (valence-) band edge of GaAs. These trends reverse at high concentration, i.e., the conduction-band edge of GaAs1-xNx becomes an N-derived state and the valence-band edge of GaAs1-xBix becomes a Bi-derived state, as expected from their band characters. We show that this band crossing phenomenon cannot be described by the popular BAC model but can be naturally explained by a simple band broadening picture.

GROWTH OF WIDE-BAND GAP IMMISCIBLE II-VI ALLOYS BY METALORGANIC VAPOR-PHASE EPITAXY

Although metalorganic vapor phase epitaxy (MOVPE) is generally regarded as a non-equillibrium process, it can be assumed that a chemical equilibrium is established at the vapor-solid interface in the diffusion limited region of growth rate. In this paper, an equilibrium model was proposed to calculate the relation between vapor and solid compositions for II-VI ternary alloys. Metastable alloys in the miscibility gap may not be obtained when the growth temperature is lower than the critical temperature of the system. The influence of growth temperature, reactor pressure, input VI/II ratio, and input composition of group VI reactants has been calculated for ZnSSe, ZnSeTe and ZnSTe. The results are compared with experimental data for the ZnSSe and ZnSTe systems.

Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN

The electronic properties of wide-energy gap zinc-blende structure GaN, A1N, and their alloys Ga(1-x)A1(x)N are investigated using the empirical pseudopotential method. Electron and hole effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Gamma and those of the conduction band at Gamma and X are obtained for GaN and AIN, respectively. The energies of Gamma, X, L conduction valleys of Ga(1-x)A1(x)N alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices based on these materials in the blue light range application. (C) 1995 American Institute of Physics.

Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN

The electronic properties of wide energy gap zinc-blende structure GaN, AlN and their alloys Ga1-xAlxN are investigated using the empirical pseudopotential method. Electron and hole Effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Gamma and those of the conduction band at Gamma and X are obtained. The energies of Gamma, X, L conduction valleys of Ga1-xAlxN alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices in the blue light range.

Optical properties of AIInGaN quaternary alloys

Carrier recombination dynamics in AlInGaN alloy has been studied by photoluminescence (PL) and time-resolved photoluminescence (TRPL). The fast redshift of PL peak energy is observed and well fitted by a physical model considering the thermal activation and transfer processes. This result provides evidence for the exciton localization in the quantum dot (QD)-like potentials in our AlInGaN alloy. The TRPL signals are found to be described by a stretched exponential function of exp[(-t/tau)(beta)], indicating the presence of a significant disorder in the material. The disorder is attributed to a randomly distributed quantum dots or clusters caused by indium fluctuations. By studying the dependence of the dispersive exponent 8 on the temperature and emission energy, we suggest that the exciton hopping dominate the diffusion of carriers localized in the disordered quantum dots. Furthermore, the localized states are found to have OD density of states up to 250 K, since the radiative lifetime remains almost unchanged with increasing temperature.