Gas Source Molecular Beam Epitaxy Growth of Si_(1-x)Ge_x/Si Alloys


Autoria(s): 刘学锋; 李建平; 孙殿照
Data(s)

1997

Identificador

http://ir.semi.ac.cn/handle/172111/19515

http://www.irgrid.ac.cn/handle/1471x/104395

Idioma(s)

英语

Fonte

刘学锋;李建平;孙殿照.Gas Source Molecular Beam Epitaxy Growth of Si_(1-x)Ge_x/Si Alloys,Rare Metals,1997,16(2):122

Palavras-Chave #半导体材料
Tipo

期刊论文