Radiation hardness characteristic of N-implanted and F-implanted SIMOX/NMOSFET

Radiation hardness of SIMOX(separation by implanted oxygen)/NMOSFET by implanting N and F ion has been carefully studied in this paper.Both N and F ion implantation can reduce hole traps in the buried oxide and the interfacial regions,which consequently improves the radiation hardness,especially under high dose radiation conditions.Moreover,experimental data show that the higher dose of the N and F ion implantation is,the better radiation hardness is achieved.In order to minimize the influence on the threshold voltage of devices,it is important to choose suitable implantation dose and energy of N or F implantation that have smaller impact on the preradiation device performance.

纳米Si镶嵌SiO2薄膜的发光与非线性光学特性的应用

采用射频磁控溅射技术和热退火处理制备了纳米Si镶嵌SiO2薄膜，在室温下观察到光致发光现象，峰值分别位于360，430和835nm，结合吸收谱、光致发光激发谱和X射线衍射分析讨论了发光机理．利用纳米Si镶嵌SiO2薄膜的非线性光学特性可作为可饱和吸收体，在Nd

GaN非线性光学效应研究进展

本文简述了对非线性光学材料的一般要求，详细介绍了GaN材料的极化效应，以及因此而具有的良好非线性光学效应。以波长转换为例说明了它在未来全光网络中的应用前景。

I类非临界相位匹配的LBO腔外倍频660nm效率的研究

报道了利用LBO晶体对Nd:YAG纳秒激光器进行腔外倍频实验的研究结果，实验中LBO晶体采用I类非临界相位匹配（NCPM），温度调谐。实验证明，采用LBO温度调谐方式具有倍频效率高、稳定性好、易于调节等优点，当匹配温度为8.4 ℃、基频光功率为1.3J时，获得了855mJ的660nm倍频光输出，最高转换效率达到66%，倍频光能量稳定度小于±3%。

MOVPE生长的GaN基蓝色与绿色LED

报道用自行研制的LP-MOVPE设备,在蓝宝石(α-Al_2O_3)衬底上生长出以InGaN为有源区的蓝光和绿光InGaN/AlGaN双异质结构以及InGaN/GaN量子阱结构的LED,其发射波长分别为430～450nm和520～540nm。

原位合成AlN及添加钇的复合AlN粉体

以Al-Mg和Al-Mg-Y合金为原料，通入高纯度的氮气，利用原位合成法制备了AlN粉体及含烧结助剂的复合AIN粉体。合金氮化产物的组织排列疏松，有利于粉化。粉化后的AlN粉体纯度较高，含氧量为1.23%，平均粒径为6.78μm, 物相为单相AIN；复合AIN粉体物相组成为AIN主相与稀土钇的氧化物烧结助剂Y2O3相。粒径分布曲线呈双峰现象，从提高粉体的充填系数角度考虑，具有这种粒径分布的粉体有利于烧结致密化。

Thermodynamic analysis of GaSb-GaCl3 vapor phase epitaxy

A thermodynamic model for the GaSb-GaCl3 system in a closed quartz ampoule was proposed. The species in the gas phase are GaCl, GaCl3, Sb-4, Sb-2. The partial pressures of these species and total pressure in the ampoule have been calculated. The calculated results indicate that the equilibrium partial pressures of GaCl, GaCl3, Sb4, Sb2 and the total pressure in the ampoule have strong dependence on temperature, free volume inside the closed ampoule and amount of transport agent GaCl3. The total pressure will give strong influence not only on the flow pattern in the ampoule, but also on the uniformity of the epilayer.

Influence of heated catalyzer on thermal distribution of substrate in HWCVD system

Based on Stefan-Boltzman and Lambert theorems, the radiation energy distribution on substrate (REDS) from catalyzer with parallel filament geometry has been simulated by variation of filament and system layout in hot-wire chemical vapor deposition. The REDS uniformity is sensitive to the distance between filament and substrate d(f-s) when d(f-s) less than or equal to 4 cm. As d(f-s) > 4 cm, the REDS uniformity is independent of d(f-s) and is mainly determined by filament number and filament separation. Two-dimensional calculation shows that the REDS uniformity is limited by temperature decay at filament edges. The simulation data are in good agreement with experiments. (C) 2003 Elsevier Science B.V. All rights reserved.

长白山阔叶红松林生产力对气候变化响应的模拟研究

本论文以长白山阔叶红松林为研究对象，观测了阔叶红松林主要树种的光合生理生态特征，建立了单叶化汁卜片的光合作用模型，上推出群落的生产力模型，采用基于干物质生产过程的模型Sim-CYCLE，模型了该生态系统对·气候变化的响应。得到主要结论如下：（1）、在不同的CO2浓度和光合有效辐射条件下，长白山阔价卜红松林主要树种净光合速率月动态规律不同；气孔导度随着瞬时光合有效辐射强度和C02浓度的增加而有下降趋势。（2）、建立的适用于阔价f一红松林的单叶化气孔导度对环境因子气温（Ta）、光合有效辐射（PAR）、饱和水汽压（VPD）的响应模型：gs＝PAR（-1.606Ta2＋118.192Ta＋1878.67）／（355.700+PAR）（-430.433+VPL），这是一个基于叶片光合机理的群落生产力模型，在模拟了长白山阔叶红松林群落生产力时取得了满意的效果。（3）、采用干物质产量理论的Sim-CYCLE模型，通过样地尺度的参数化模拟表明，长白山阔叶红松林生态系统的总初级生产力（GPP）为14.89Mgcha-1、净初级生产力（NPP）为8.22MgCha-1、净生态系统生产力困EP）为2．67MgCha-1；在CO2倍增和温度上升时碳积累在增加，净初级生产力（NPP）为9.03±1.51MgCha-1、净生态系统生产力（NEP）为2.95±0.47MgCha-1。