黄土高原风成沉积和风化作用对黄土一古土壤地球化学组成的控制

Geochemical analyses have been carried out on the samples taken from the last 250 ka wind-blown loess-paleosol sequences at Huanxian, Xifeng, Changwu, and Lantian in central Chinese Loess Plateau. The result shows: 1) that major changes in chemical composition of the loess-paleoso! sequences are due to leaching and reprecipitation of carbonates, and resulted from dust grain size changes rather than chemical weathering of silicates; 2) that Si/Ti, Si/AI, and Si/Fe ratios can be used as a proxy of dust deposition intensity, and Na/AI ratio can also be used as indicator of climatic changes in genera! rather than of the summer monsoon intensity. Our results show that chemical composition was controlled by dust deposition and weathering, and imply changes of climate and environment in the Loess Plateau during last 250,000 years.

Direct synthesis and characterization of titanium-substituted mesoporous molecular sieve SBA-15

Ti-substituted mesoporous SBA-15 (Ti-SBA-15) materials have been synthesized by using a new approach in which the hydrolysis of the silicon precursor (tetramethoxysilane, TMOS) is accelerated by fluoride. These materials were characterized by powder X-ray diffraction patterns (XRD), X-ray fluorescence spectroscopy (Y-RF), N-2 sorption isotherms, diffuse-reflectance UV-visible (UV-vis) and UV-Raman spectroscopy, Si-29 MAS NMR, and the catalytic epoxidation reaction of styrene. Experiments show that Ti-SBA-15 samples of high quality can be obtained under the following conditions: F/Si greater than or equal to 0.03 (molar ratio), pH less than or equal to 1.0, aging temperature less than or equal to 80 degreesC, and Ti/Si less than or equal to 0.01. It was found that the hydrolysis rate of TMOS was remarkably accelerated by fluoride, which was suggested to play the main role in the formation of Ti-SBA-15 materials of high quality. There is no stoichiometric incorporation of Ti, and the Ti contents that are obtained are quite low in the case of the approach that is proposed. The calcined Ti-SBA-15 materials show highly catalytic activity in the epoxidation of styrene.

The phase transitions of hetero atoms substituted molecular sieves Me-VPI-5(Me=Mg, Ti, Sn, Si) and their influence on spectra structures of Eu(III) ion

The hetero atom substituted aluminophosphate molecular sieves Me-VPI-5(Me = Mgt Ti, Sn, Si) were synthesized hydrothermally. Rare earth ions are originally doped into these microporous materials by aqueous solution ion exchange procedures. The phase transitions of the microporous materials are investigated by high-temperature and high-pressure experimental techniques. The influence of the phase transitions on the rare earth ions' spectral structures is discussed, With the increase of temperature, Eu(II)Mg-VPI-5 is converted into Eu(II)Mg-AIPO(4)-8, then into tridymite phase. The pressure has a notable influence on Eu(II) ion's spectral structures. The spectral structures have changed regularly with the increase of pressure.

Epoxidation of styrene on Si/Ti/SiO2 catalysts prepared by chemical grafting

Titania-silica (Ti/SiO2) and silica-titania-silica (Si/Ti/SiO2) catalysts were:prepared by chemical grafting using TiCl4 and tetraethyl orthosilicate (TEOS) as precursors and SiO2 as support. The prepared catalysts were characterized by UV Raman and visible Raman spectroscopies, XRD and the epoxidation of styrene; Ti/SiO2: catalyst grafted with only titanium species is not very active for epoxidation using H2O2 (30%), but is active and-selective when one uses tert-butyl hydroperoxide (TBHP). The catalyst grafted at high temperatures shows better epoxide selectivity. Si/Ti/SiO2 catalyst, the titanium-silica grafted further with TEOS, is active and selective for the epoxidation of styrene using either dilute H2O2 or TBHP, possibly due to the fact that the grafting of Ti/SiO2 with TEOS modifies the coordination structure of titanium and makes the titanium sites of Si-O-Ti-O-Si species less hydrophilic. A characteristic band at 1085cm(-1) due to Ti-O-Si species is detected for the grafted catalysts by UV resonance Raman spectroscopy. Reaction between TiCl4 and SiO2 at high temperatures favors the formation of Ti-O-Si species. Better activity and selectivity to epoxide,is found for the catalysts with more Ti-O-Si species. It is assumed that the active sites are the highly isolated Ti-O-Si species. For Si/Ti/SiO2 catalyst, the gas phase O-2 can participate in the catalytic oxidation of styrene when H2O2 is present ana:ii causes the formation of benzaldehyde. (C) 2000 Elsevier Science B.V. All rights reserved.

Laser-induced damage of Ti O2 Si O2 high reflector at 1064 nm

A high laser-induced damage threshold (LIDT) TiO2/SiO2 high reflector (HR) at 1064 nm is deposited by e-beam evaporation. The HR is characterized by optical properties, surface, and cross section structure. LIDT is tested at 1064 nm with a 12 ns laser pulse in the one-on-one mode. Raman technique and scanning electron Microscope are used to analyze the laser-induced modification of HR. The possible damage mechanism is discussed. It is found that the LIDT of HR is influenced by the nanometer precursor in the surface, the intrinsic absorption of film material, the compactness of the cross section and surface structure, and the homogeneity of TiO2 layer. Three typical damage morphologies such as flat-bottom pit, delamination, and plasma scald determine well the nanometer defect initiation mechanism. The laser-induced crystallization consists well with the thermal damage nature of HR. (C) 2008 American Institute of Physics.

Effect of counterpart on the tribological behavior and tribo-induced phase transformation of Si

The tribological behaviors and phase transformation of single crystal silicon against Si3N4, Ruby and steel were investigated in this study. It was found that the strong chemical action between silicon and Fe was the key factor to the tribological behavior of silicon as slid against steel. SEM and Raman spectroscopy indicated that phase transformation of single crystal silicon occurred during the running-in period at low sliding velocity as slid against Si3N4 and Ruby. and gave birth to single or a mixture phase of Si-III, Si-XII and amorphous silicon. The high hardness of counterpart and the absence of chemical action between silicon and counterpart facilitated the phase transformation of single crystal silicon. (C) 2008 Elsevier Ltd. All rights reserved.

A high-performance Si-based MOS electrooptic phase modulator with a shunt-capacitor configuration

A novel Si-based metal-oxide-semiconductor (MOS) electrooptic phase modulator including two shunt oxide layer capacitors integrated on a silicon-on-insulator (SOI) waveguide is simulated and analyzed. The refractive index near the two gate oxide layers is modified by the free carrier dispersion effect induced by applying a positive bias on the electrodes. The theoretical calculation of free carrier distribution coupled with optical guided mode propagation characteristics has been carried out. The influence of the structure parameters such as the width and the doping level of the active region are analyzed. A half-wave voltage V-pi = 4 V is demonstrated with an 8-mm active region length and a 4-mu m width of an inner rib under an accumulation mode. When decreasing the inner rib width to 1 mu m, the phase modulation efficiency is even higher, and the rise and fall times reach 50 and 40 ps, respectively, with a 1.0 x 10(17) cm(-3) doping level in the active region.

The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy

Single crystal GaN films have been grown on to an Al2O3 coated (001)Si substrate in a horizontal-type low-pressure MOVPE system. A thin Al2O3 layer is an intermediate layer for the growth of single crystal GaN on to Si although it is only an oriented polycrystal him as shown by reflection high electron diffraction. Moreover, the oxide was not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN overlayer as studied by transmission electron microscopy. Double crystal X-ray diffraction showed that the linewidth of (0002) peak of the X-ray rocking curve of the 1.3 mu m sample was 54 arcmin and the films had heavy mosaic structures. A near band edge peaking at 3.4 eV at room temperature was observed by photoluminescence spectroscopy. (C) 1998 Elsevier Science B.V. All rights reserved.

The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy

The physical properties of low-temperature-deposited GaN buffer layers with different thicknesses grown by metal-organic vapor-phase epitaxy have been studied. A tentative model for the optimum thickness of buffer layer has been proposed. Heavily Si-doped GaN layers have been grown using silane as the dopant. The electron concentration of Si-doped GaN reached 1.7 x 10(20) cm(-3) with mobility 30 cm(2)/V s at room temperature. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

INTERACTION OF CO WITH SI AND SIO2 DURING RAPID THERMAL ANNEALING

The interaction of Co with Si and SiO2 during rapid thermal annealing has been investigated. Phase sequence, layer morphology, and reaction kinetics were studied by sheet resistance, x-ray diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy. With increasing annealing temperature, Co film on Si(100) is transformed sequentially into Co2Si, CoSi, and finally CoSi2 which corresponds to the minimum of sheet resistance. No evidence of silicide formation was observed for Co/SiO2 annealed even at the high temperature of 1050-degrees-C.

The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy

Wurtzite single crystal GaN films have been grown onto a gamma-Al2O3/Si(001) substrate in a horizontal-type low pressure MOVPE system. A thin gamma-Al2O3 layer is an intermediate layer for the growth of single crystal GaN on Si although it is only an oriented polycrystal film as shown by reflection high electron diffraction. Moreover, the oxide is not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN layer as studied by transmission electron microscopy. Double crystal x-ray linewidth of (0002) peak of the 1.3 mu m sample is 54 arcmin and the films have heavy mosaic structures. A near band edge peaking at 3.4 eV at room temperature is observed by photoluminescence spectroscopy. Raman scattering does not detect any cubic phase coexistence.