Optical properties and g factors of GaAs quantum rods

The Hamiltonian of the zinc-blende quantum rods in the framework of eight-band effective-mass approximation in the presence of external homogeneous magnetic field is given. The electronic structure, optical properties and electron g factors of GaAs quantum rods are investigated. We found that the electron g factors are very sensitively dependent on the dimensions of the quantum rods. As some of the three dimensions increase, the electron g factors decrease. The more the dimensions increase, the more the electron g factors decrease. The dimensions perpendicular to the direction of the magnetic field affect the electron g factors more than the other dimension. (c) 2006 Elsevier B.V. All rights reserved.

Electronic structure and g factors of narrow-gap zinc-blende nanowires and nanorods

The Hamiltonian in the framework of eight-band effective-mass approximation of the zinc-blende nanowires and nanorods in the presence of external homogeneous magnetic field is given in the cylindrical coordinate. The electronic structure, optical properties, magnetic energy levels, and g factors of the nanowires and nanorods are calculated. It is found that the electron states consist of many hole-state components, due to the coupling of the conduction band and valence band. For the normal bands which are monotone functions of |k(z)|, long nanorods can be modeled by the nanowires, the energy levels of the nanorods approximately equal the values of the energy band E(k(z)) of the nanowires with the same radius at a special k(z), where k(z) is the wave vector in the wire direction. Due to the coupling of the states, some of the hole energy bands of the nanowires have their highest points at k(z)=0. Especially, the highest hole state of the InSb nanowires is not at the k(z)=0 point. It is an indirect band gap. For these abnormal bands, nanorods can not be modeled by the nanowires. The energy levels of the nanorods show an interesting plait-like pattern. The linear polarization factor is zero, when the aspect ratio L/2R is smaller than 1, and increases as the length increases. The g(z) and g(x) factors as functions of the k(z), radius R and length L are calculated for the wires and rods, respectively. For the wires, the g(z) of the electron ground state increases, and the g(z) of the hole ground state decreases first, then increases with the k(z) increasing. For the rods, the g(z) and g(x) of the electron ground state decrease as the R or the L increases. The g(x) of the hole ground state decreases, the g(z) of the hole ground state increases with the L increasing. The variation of the g(z) of the wires with the k(z) is in agreement with the variation of the g(z) of the rods with the L.

Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique

In this paper we propose a new method for measuring the thickness of the GaN epilayer, by using the ratio of the integrated intensity of the GaN epilayer X-ray diffraction peaks to that of the sapphire substrate ones. This ratio shows a linear dependence on the GaN epilayer thickness up to 2 mum. The new method is more accurate and convenient than those of using the relationship between the integrated intensity of GaN epilayer diffraction peaks and the GaN thickness. Besides, it can eliminate the absorption effect of the GaN epilayer.

X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates

In order to understand the growth feature of GaN on GaAs (0 0 1) substrates grown by metalorganic chemical vapor deposition (MOCVD), the crystallinity of GaN buffer layers with different thicknesses was investigated by using double crystal X-ray diffraction (DCXRD) measurements. The XRD results showed that the buffer layers consist of predominantly hexagonal GaN (h-GaN) and its content increases with buffer layer thickness. The nominal GaN (111) reflections with chi at 54.74degrees can be detected easily, while (0 0 2) reflections are rather weak. The integrated intensity of reflections from (111) planes is 4-6 times that of (0 0 2) reflections. Possible explanations are presented. (C) 2003 Elsevier Science B.V. All rights reserved.

High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers

A new method of measuring the thickness of GaN epilayers on sapphire (0 0 0 1) substrates by using double crystal X-ray diffraction was proposed. The ratio of the integrated intensity between the GaN epilayer and the sapphire substrate showed a linear relationship with the GaN epilayer thickness up to 2.12 mum. It is practical and convenient to measure the GaN epilayer thickness using this ratio, and can mostly eliminate the effect of the reabsorption, the extinction and other scattering factors of the GaN epilayers. (C) 2003 Elsevier Science B.V. All rights reserved.

Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G

The linear electro-optic (Pockels) effect of wurtzite gallium nitride (GaN) films and six-period GaN/AlxGa1-xN superlattices with different quantum structures were demonstrated by a polarization-maintaining fiber-optical Mach-Zehnder interferometer system with an incident light wavelength of 1.55 mu m. The samples were prepared on (0001) sapphire substrate by low-temperature metalorganic chemical vapor deposition (MOCVD). The measured coefficients of the GaN/AlxGa1-xN superlattices are much larger than those of bulk material. Taking advantage of the strong field localization due to resonances, GaN/AlxGa1-xN SL can be proposed to engineer the nonlinear responses.

Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) at the GaN/Ge heterostructure interface. The VBO is directly determined to be 1.13 +/- 0.19 eV, according to the relationship between the conduction band offset Delta E-C and the valence band offset Delta E-V : Delta E-C = E-g(GaN) - E-g(Ge) - Delta E-V, and taking the room-temperature band-gaps as 3.4 and 0.67 eV for GaN and Ge, respectively. The conduction band offset is deduced to be 1.6 +/- 0.19 eV, which indicates a type-I band alignment for GaN/Ge. Accurate determination of the valence and conduction band offsets is important for the use of GaN/Ge based devices.

Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being -0.30 +/- A 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 +/- A 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.

氧化物气敏半导体与H_2O(g)、O_2(g)及还原性气体相互作用的研究

本文采用自行设计的均速增加加热电压改变元件温度的方法以及动、静态气敏特性测试方法并借助其它测试手段（X光衍射、BET、扫描电流）系统地研究了表面电导控制型SnO_2系元件和体电导控制型γ-Fe_2O_3元件在变温过程中与H_2O(g)、O_2(g)和还原性气体相互作用的规律。实验结果表明：添加剂Al_2O_3、MgO、Pd、Pt和Sb_2O_3均对元件的体电阴均有调制作用。Al_2O_3是以微粒状存在于元件内，它为元件提供了活化中心，提高了元件的灵敏度。而γ-Fe_2O_3具有超微细结构。SnO_2系元件和γ-FeO_3元件取样电压(V_L)与温度（T）的变化关系在空气和惰性气氛中均是非线性的。材料组份不同的元件，其V_L～T变化规律不同。各元件在空气和惰性气氛中的变化，除阻值不同外，其V_L～T变化规律基本相同。综合考虑添加剂(Al_2O_3、MgO)和气氛（空气、惰性气氛、纯氧气）的影响，SnO_2系元件的V_L～T变化规律不仅是由于氧在元件表面上的吸附及吸附状态的不同所引起，很大程度上取决于元件材料的组成和温度对材料内载流子浓度和逐移率的影响。基于对SnO_2系元件的V_L～T变化规律的分析，γ-Fe_2O_3元件V_L随温度的变化也是由于环境中的氧和材料内载流子迁移率随温度的变化所致。SnO_2系元件和γ-Fe_2O_3元件在不同温度所测的V_L～T变化关系表明：SnO_2元件在低温(<72%RH)条件下，具有与干燥空气中相同的V_L～T变化关系；在高温度(>72%RH)的空气中，H_2O(g)的存在对元件低温区(<100 ℃) (200 ℃-400 ℃)的V_L值均有影响，在低温区的V_L值较干燥空气中的V_L值高；中温区的V_L值较干燥空气中的V_L值低。把在约98%RH的空气和氩气中的V_L～T变化曲线比较表明：中温区的实验现象是由于空气中H_2O(g)与O_2(g)共存所致。γ-Fe_2O_3元件在不同温气气氛中的V_L～T变化规律相同，且在元件工作温度（129 ℃～320 ℃）范围内V_L值相同，但均较干燥空气中该条件下的V_L值高。在实验中亦观察到SnO_2元件在温度低于72%RH中长期放置亦可观察到与实验中温度>72%RH条件下相同的V_L～T变化。SnO_2元件在空气和惰性气氛中对还原性气体均有气敏性。而且在惰性气氛中对微量还原性气体（H_2）的灵敏度比在空气中的灵敏度高。掺贵金属Pd或Pt的SnO_2元件在惰性气氛中，当H_2浓度高于8000ppm时，元件电导突变式增加。我们认为SnO_2系元件在空气中检测还原性气体的工作机理是表面化学反应过程；在惰性气氛中其工作机理是表面解离吸附过程。γ-Fe_2O_3元件在空气中对C_4H_(10)具有较高的选择性。但在惰性气氛中对还原性气体不具有气敏性。我们认为环境中氧是体电导控制型气敏元件气敏性不可缺少的中间媒介。其检测机理是微观可逆氧化-还原过程。

眼镜王蛇毒第X因子激活剂结构和功能研究

通过G-75（超细）凝胶过渡，快速蛋白液相色谱（FPLC）阴离子柱两步离子交换从眼镜王蛇毒中分离得到了一个特异的血液凝固第X因子激活剂。在碱性聚丙烯酰胺凝胶电泳和SDS-聚丙烯酰胺凝胶电泳中均呈一条均一的带。纯化的眼镜王蛇毒第X因子激活剂不能作用于纤维蛋白原、凝血酶原、蛋白C、纤溶酶原，对6种人工合成小肽发色底物及BAEE的水解实验表明它不能水解大多数小肽底物，不具备水解BAEE的酯酶活性，表明了它对大分子及小分子底物作用专一性较高，同时表明了对FX的作用是较为专一的。抑制剂研究结果表明它对FX的激活活性被丝氨酸蛋白酶的抑制剂PMSF、TPCK等抑制，而金属离子螯合剂EDTA则无影响，表明眼镜王蛇毒血液凝固第X因子激活剂是一个丝氨酸蛋白酶。

KINEMATICAL STUDY OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE BY A DOUBLE CRYSTAL X-RAY-DIFFRACTION METHOD

Two samples of nominal 20-period Ge0.20Si0.80(5 nm)/Si(25 nm) and Ge0.5Si0.5(5 nm)/Si(25 nm) strained-layer superlattices (SLSs) were studied by the double-crystal X-ray diffraction method. It is convenient to define the perpendicular strains relative to the average crystal. Computer simulations of the rocking curves were performed using a kinematical step model. An excellent agreement between the measured and simulated satellite patterns is achieved. The dependence of the sensitivity of the rocking curves to the structural parameters of the SLS, such as the alloying concentration x and the layer thicknesses and the L component of the reflection g = (HKL), are clearly demonstrated.

X-ray-diffraction study of quasipseudomorphic ErSi1.7 layers formed by channeled ion-beam synthesis

ErSi1.7 layers with high crystalline quality (chi(min) of Er is 1.5%) have been formed by 90 keV Er ion implantation to a dose of 1.6X10(17)/cm(2) at 450 degrees C using channeled implantation. The perpendicular and parallel elastic strain e(perpendicular to)=-0.94%+/-0.02% and e(parallel to)=1.24%+/-0.08% of the heteroepitaxial erbium silicide layers have been measured with symmetric and asymmetric x-ray reflections using a double-crystal x-ray diffractometer. The deduced tetragonal distortion e(T(XRD))=e(parallel to)-e(perpendicular to)=2.18%+/-0.10%, which is consistent with the value e(T(RBS))2.14+/-0.17% deduced from the Rutherford backscattering and channeling measurements. The quasipseudomorphic growth of the epilayer and the stiffness along a and c axes of the epilayer deduced from the x-ray diffraction are discussed.

INVESTIGATION OF C-60 SINGLE-CRYSTAL BY X-RAY-METHODS

C-60 Single crystals grown by a single-temperature-gradient technique were characterized by synchrotron radiation white beam x-ray topography and x-ray double crystal diffraction with Cu K-alpha 1 radiation on conventional x-ray source. The results show that the crystal is rather well crystallized, The x-ray topographies give an evidence of dendritic growth mechanism of C-60 Single crystal, and x-ray double crystal diffraction rocking curve shows that there are mosaic structural defects in the sample. A phase transition st 249+/-1.5% K from a simple cubic to a face centered cubic structure is confirmed by in situ observation of synchrotron radiation white beam x-ray topography with the temperature varing from 230 to 295 K.

GaN外延膜厚度的x射线双晶衍射测量

提出了一种利用x射线双晶衍射测量GaN厚度的新方法．该方法采用GaN积分强度和衬底积分强度的比值与样品厚度的关系来测量GaN外延膜厚度，此比值与GaN样品厚度在t＜2μm为线性关系．该方法消除了因GaN吸收造成的影响，比单纯用GaN积分强度与样品厚度的关系推算GaN外延膜厚度精度更高，更方便可靠．

利用Γ－X混合在AlAs/GaAs异质结构实现光生电子、空穴对的持久存储

利用GaAs量子阱中Γ谷速缚态与AlAs层中X谷束缚态在异质结界面处的共振Γ－X混合，使得光生电子不仅在实空间而且在K空间与光生空穴分离开来，从而在结构中形成了持久的电荷极化。这一效应已被C－V特性上所观察到的电容阶跃和正反方向扫描时所出现的双稳滞迟现象所证实。如果将我们的器件用作存储单元，预期可以获得很长的存储时间T_s。同时，由于Γ－X混合隧穿速率很快，光子“读出”仍可以保持很快。