Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy
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2010
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| Resumo |
X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) at the GaN/Ge heterostructure interface. The VBO is directly determined to be 1.13 +/- 0.19 eV, according to the relationship between the conduction band offset Delta E-C and the valence band offset Delta E-V : Delta E-C = E-g(GaN) - E-g(Ge) - Delta E-V, and taking the room-temperature band-gaps as 3.4 and 0.67 eV for GaN and Ge, respectively. The conduction band offset is deduced to be 1.6 +/- 0.19 eV, which indicates a type-I band alignment for GaN/Ge. Accurate determination of the valence and conduction band offsets is important for the use of GaN/Ge based devices. Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-07-05T07:35:25Z No. of bitstreams: 1 Measurement of GaNGe(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy.pdf: 549189 bytes, checksum: effb57c707baef3c4085e63e102a932e (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-07-05T07:46:56Z (GMT) No. of bitstreams: 1 Measurement of GaNGe(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy.pdf: 549189 bytes, checksum: effb57c707baef3c4085e63e102a932e (MD5) Made available in DSpace on 2010-07-05T07:46:56Z (GMT). No. of bitstreams: 1 Measurement of GaNGe(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy.pdf: 549189 bytes, checksum: effb57c707baef3c4085e63e102a932e (MD5) Previous issue date: 2010 Supported by the National Natural Science Foundation of China under Grant Nos 60776015 and 60976008, the National Basic Research Program of China under Grant No 2006CB604907, and the High-Technology R&D Program of China (Nos 2007AA03Z402 and 2007AA03Z451) 国内 Supported by the National Natural Science Foundation of China under Grant Nos 60776015 and 60976008, the National Basic Research Program of China under Grant No 2006CB604907, and the High-Technology R&D Program of China (Nos 2007AA03Z402 and 2007AA03Z451) |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Guo Y (Guo Yan), Liu XL (Liu Xiang-Lin), Song HP (Song Hua-Ping), Yang AL (Yang An-Li), Zheng GL (Zheng Gao-Lin), Wei HY (Wei Hong-Yuan), Yang SY (Yang Shao-Yan), Zhu QS (Zhu Qin-Sheng), Wang ZG (Wang Zhan-Guo) .Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy.CHINESE PHYSICS LETTERS,2010,27(6):Art. No. 067302 |
| Palavras-Chave | #半导体材料 #GE #GAAS #GROWTH |
| Tipo |
期刊论文 |
