A low power consumption thermo-optic variable optical attenuator based on SOI material

A SOI thenno-optic variable optical attenuator with U-grooves based on a multimode interference coupler principle is fabricated. The dynamic attenuation range is 0 to 29 dB; at the wavelength range between 1510 nm and 1610nm, and the maximum power consumption is only l30mW. Compared to the variable optical attenuator without U-groove, the maximum power consumption decreases more than 230mW

The effect of Fabry-Perot interference on the packaging of SOI-based optoelectronic devices

During the packaging of optoelectrome device, a problem always met is the instability of output power. The main effect causing this problem, Fabry-Perot interference, is discussed in this paper. Both theoretical analysis and experimental test are carried out and in good agreement. As an example of avoiding the disadvantage of Fabry-Perot interference, the packaging process of Silicon-on-Insulator (SOI) based Variable Optical Attenuator(VOA) is shown at last.

Improved diphasic nc-si/a-si : H I-layer materials using PECVD

Two series of films has been prepared by using a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystalline state. The photoelectronic properties of the films have been investigated as a function of crystalline fraction. In comparison with typical a-Si:H, these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, higher mobility life-time product ( LT) and higher stability upon light soaking. By using the diphasic nc-Si/a-Si films as the intrinsic layer, a p-i-n junction solar cell has been prepared with an initial efficiency of 9. 10 % and a stabilized efficiency of 8.56 % (AM 1.5, 100 mW/cm(2)).

Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces

Homoepitaxial growth of 4H-SiC on off-oriented n-type Si-face (0001) substrates was performed in a home-made hot-wall low pressure chemical vapor deposition (LPCVD) reactor with SiH4 and C2H4 at temperature of 1500 C and pressure of 20 Torr. The surface morphology and intentional in-situ NH3 doping in 4H-SiC epilayers were investigated by using atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS). Thermal oxidization of 4H-SiC homoepitaxial layers was conducted in a dry O-2 and H-2 atmosphere at temperature of 1150 C. The oxide was investigated by employing x-ray photoelectron spectroscopy (XPS). 4H-SiC MOS structures were obtained and their C-V characteristics were presented.

Hetero-epitaxial growth of ZnO films on silicon by low-pressure metal organic chemical vapor deposition

Quality ZnO films were successfully grown on Si(100) substrate by low-pressure metal organic chemical vapor deposition method in temperature range of 300-500 degrees C using DEZn and N2O as precursor and oxygen source respectively. The crystal structure, optical properties and surface morphology of ZnO films were characterized by X-ray diffraction, optical refection and atomic force microscopy technologies. It was demonstrated that the crystalline structure and surface morphology of ZnO films strongly depend on the growth temperature.

基于单向陷门置换的长消息签密方案

在随机Oracle模型的基础上, 提出一种基于单向陷门置换（trapdoor permutations, TDPs）的、可并行的、长消息签密方案——PLSC （parallel long-message signcryption）. 该方法采用“整体搅乱, 局部加密（scramble all, and encrypt small）”的思想, 用一个伪随机数对要传送的消息和用户的身份（ID）进行“搅乱（scrambling operation）”, 然后对两个固定长度的小片段（并行地）进行单向陷门置换（TDP）操作. 这种设计使得整个方案可直接高效地处理任意长度的消息, 既可避免循环调用单向陷门置换（如CBC模式）所造成的计算资源的极度消耗, 也可避免由“对称加密方案”与“签密方案”进行“黑盒混合（black-box hybrid）”所造成的填充（padding）冗余. 不仅可以显著地节约消息带宽, 而且可以显著地提高整体效率. 具体地说, 该方法对任何长度的消息进行签密, 仅需进行一次接收方的TDP运算（相当于加密）, 以及一次发送方的TDP运算（相当于签名）, 从而最大限度地降低了TDP运算的次数, 提高了整体的运算效率. 因为, 对于公钥加密算法来说, 运算量主要集中在TDP运算上, TDP运算是整个算法的瓶颈所在. 另一方面, 由于避免了填充上的冗余, 新方案的效率也高于标准的“黑盒混合”方案.重要的是, 新方案能够达到选择密文攻击下的紧致的语义安全性（IND- CCA2）、密文完整性（INT-CTXT）以及不可否认性（non-repudiation）. 而且所有这些安全要求都可以在多用户（multi-user）、内部安全（insider-security）的环境下得以实现. 另外, 尽管新方案主要针对长消息的签密, 但它也可应用于某些不能进行大块数据处理的环境（智能卡或其他只有少量内存的环境）. 也就是说, 对于这些小内存设备来说, 仍然可以用该方案来实现长消息的签密处理.

单组分茂稀土催化剂催化极性单体聚合

本论文分为两部分，第一部分合成一些新型茂稀土催化剂。一共合成出四类22种稀土金属有机配合物。第二部分尝试了茂基稀土配合物对甲基丙烯酸甲酯（MMA）、丙烯腈（AN）、4-乙烯基吡啶（4-VP）、已内酯（CL）的聚合，研究了其聚合规律，并对其聚合物进行了表征。主要结果如下：1. 合成出四类22种稀土金属有机配合物：第一类：氯化稀土配合物(C_9H_7)_2LnCl(THF)_n (Ln = Y，Yb，Nd，Sm)，Me_2Si(Ind)_2 YCl(THF)_n，Me_2Si(Flu)_2YCl(THF)_n， Me_2Si(Ind)(Flu)YCl(THF)_n。第二类：稀土胺化物(C_9H_7)_2LnN(i-Pr)_2(THF) (Ln = Y，Yb)， Me_2Si(Ind)_2YN(i-Pr)_2，Me_2Si(Flu)_2Y N(i-Pr)_2， Me_2Si(Ind)(Flu)YN(i-Pr)_2。第三类：稀土与铝双金属配合物(C_9H_7)_2Y(μ-Et)_2AlEt_2，Me_2Si(Flu)_2Y(μ-Et)_2AlEt_2， Me_2Si(Ind)(Flu)Y(μ-Et)_2AlEt_2，(C_9H_7)_2Sm(μ-Me)_2AlMe_2， (C_9H_7)_2Sm(μ-Et)_2AlEt_2。第四类：二价钐配合物(C_9H_7)_2Sm(THF)_3，(C_(13)H_9)_2Sm(THF)_2， Me_2Si(Flu)_2Sm(THF)_x，Me_2Si(Ind)(Flu)Sm (THF)_x， (CH_2)_2(fLU)_2Sm(THF)_x。对每类配合物分别进行了核磁、红外及紫外分析。2.茂稀土配合物催化极性单体聚合（1）甲基丙烯酸甲酯（MMA）聚合 首次发现(C_9H_7)_2Y(μ-Et)_2AlEt_2， (C_9H_7)_2LnN(i-Pr)_2(THF) (Ln = Y，Yb)， Me_2Si(Ind)_2YN(i-Pr)_2，Me_2Si(Flu)_2YN(i-Pr)_2， Me_2Si(Ind)(Flu)YN(i-Pr)_2 MMA聚合均表现出极高的催化活性，其中以(C_9H_7)_2Y(μ-Et)_2AlEt_2催化MMA所得的PMMA全同含量（mm）可达94.8%。（2）丙烯腈（AN）聚合：首次发现(C_9H_7)_2Y(μ-Et)_2AlEt_2，(C_9H_7)_2LnN(i-Pr)_2(THF) (Ln=Y，Yb)对AN聚合表现出较高的催化活性，并且发现往此催化体系中加入添加剂PhONa，基催化活性及分子量都明显提高。其聚合物的立构规整性用~(13)C-NMR谱进行了表征，发现聚合物的结构均为无规结构。(3)4-乙烯基吡啶（4-VP）聚合：首次发现(C_9H_7)_2Y(μ-Et)_2AlEt_2，(C_9H_7)_2Sm(THF)_3对4-VP聚合表现出很好的催化活性，并且发现单体浓度及催化剂用量对4-VP聚合有较大的影响。此外，一些桥联配体的二价钐配合物Me_2Si(Flu)_2Sm(THF)_x，Me_2Si(Ind)(Flu)Sm(THF)_x， (CH_2)_2(Flu)_2Sm(THF)_x也能催化4-VP聚合，但其催化活性较低。（4）已内酯（CL）聚合：比较了各类茂稀土催化剂对己内酯开环聚合的催化活性。发现Ind_2Y(μ-Et)_2AlEt_2，Ind_2YN(i-Pr)_2(THF)， Me_2Si(Ind)(Flu)YN(i-Pr)_2(THF)，Me_2Si(Flu)_2YN(i-Pr)_2(THF)， Me_2Si(Ind)_2YN(i-Pr)_2(THF)，Ind_2Sm(THF)_x， Me_2Si(Flu)_2Sm(THF)_x，Me_2Si(Ind)(Flu)Sm(THF)_x， (CH_2)_2(Flu)_2Sm(THF)_x均能有效地催化己内酯开环聚合，二价稀土金属配合物的催化活性要比三价稀土金属配合物高。

Integrated tapered MMI couplers in the silicon-on-insulator technology

The authors have designed and fabricated 2x2 parabolically tapered MMI coupler with large cross-section and large space between difference ports using Silicon-on-Insulator ( SOI) technology. The devices demonstrate a minimum uniformity of 0.8dB and 30% shorter than the straight MMI coupler.

Analysis of equilateral triangle semiconductor microlasers with rough sidewalls

The mode frequencies and quality factors are calculated for the equilateral triangle semiconductor microlasers with sinusoidal and random Gaussian sidewalls. The results show that the modes can still have high Q-factors.

A novel polarization-insensitive semiconductor optical amplifier structure with large 3dB bandwidth

A novel approach to achieving a polarization-insensitive semiconductor optical amplifier is presented. The active layer consists of graded tensile strained bulk-like structure. which can not only enhance TM mode material gain and further realize polarization-insensitivity, but also get a large 3dB bandwidth due to different strain introduced into the active layer. 3dB bandwidth more than 40nm. 65nm has been obtained in die experiment and theory, respectively. The characteristics of such polarization insensitive structure have been analyzed, The influence of the amount of strain and of the thickness of strain layer on the polarization insensitivity has been discussed.

Optical characterization of the Ge/Si (001) islands in multilayer structure

We show that the observed temperature dependence of the photoluminescence (PL) features can be consistently explained in terms of thermally activated carrier transfer processes in a multilayer structure of the self-organized Ge/Si(001) islands. The type II (electron confinement in Si) behavior of the Ge/Si islands is verified. With elevated temperature, the thermally activated electrons and holes enter the Ge islands from the Si and from the wetting layer (WL), respectively. An involvement of the type I (spatially direct) into type II (spatially indirect) recombination transition takes place at a high temperature.

Integrated MMI optical couplers and optical switches in Silicon-on-insulator technology

Integrated multimode interference coupler based on silicon-on-insulator has been become a kind of more and more attractive device in optical systems. Thin cladding layers (<1.0mum) can be used in SOI waveguide due to the large index step between Si and SiO2, making them compatible with the VLSI technology. Here we demonstrate the design and fabrication of multimode interference (MMI) optical couplers and optical switches in SOI technology.

High-speed DFB laser and EMLs

High speed reliable 1.55 mum AlGaInAs multi-quantum well ridge waveguide (RW) DFB laser is developed with a 9GHz -3dB bandwidth. A high speed self aligned constricted mesa 1.55 mum DFB laser is achieved with a 9.1GHz -3dB bandwidth and a more than 20mW output power. A cost effective single RW electroabsorption modulated DFB laser (EMLs) is proposed and successfully fabricated by adopting selective area growth techniques:. a penalty free transmission at 2.5Gbps over 280Km normal G.652 single mode fiber is realized by using this EML as light source. For achieving a better performance EMLs. a gain-coupled DFB laser with etched quantum wells is successfully integrated with a electroabsorption modulator (EAM) for a high single mode yield. the wavelength of a EML is tuned in a 3.2nm range by a integrated thin-film heater for the wavelength routing. a buried heterostructure DFB laser is also successfully integrated with a RW EAM for a lower threshold current. lower EAM parasitic capacitance and higher output power.

16-channel 0.35 mu m CMOS/VCSEL optoelectronic devices

We report some investigations on vertical cavity surface emitting laser (VCSEL) arrays and VCSEL based optoelectronic smart photonic multiple chip modules (MCM), consisting of 1 x 16 vertical cavity surface emitting laser array and 16-channel lasers driver 0.35 mum CMOS circuit. The hybrid integrated multiple chip modules based on VCSEL operate at more than 2GHz in -3dB frequency bandwidth.

1.3 mu m GaInNAs/GaAs quantum well lasers and photodetectors

The growth of GalnNAs/GaAs quantum well (QW) has been investigated by solid-source molecular beam epitaxy (MBE). N was introduced by a dc-active plasma source. Highest N concentration of 2.6% in GaInNAs/GaAs QW was obtained, corresponding to the photoluminescence peak wavelength of 1.57 mum at 10K. The nitrogen incorporation behavior in MBE growth and the quality improvement of the QW have been studied in detail. 1.3 mum GaInNAs/GaAs SQW laser and MQW resonant-cavity enhanced photodetector have been achieved.