Integrated tapered MMI couplers in the silicon-on-insulator technology
| Data(s) |
2001
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|---|---|
| Resumo |
The authors have designed and fabricated 2x2 parabolically tapered MMI coupler with large cross-section and large space between difference ports using Silicon-on-Insulator ( SOI) technology. The devices demonstrate a minimum uniformity of 0.8dB and 30% shorter than the straight MMI coupler. The authors have designed and fabricated 2x2 parabolically tapered MMI coupler with large cross-section and large space between difference ports using Silicon-on-Insulator ( SOI) technology. The devices demonstrate a minimum uniformity of 0.8dB and 30% shorter than the straight MMI coupler. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:36:29Z (GMT). No. of bitstreams: 1 2807.pdf: 116957 bytes, checksum: 362e3f1acab48898cc1522bc87f627b4 (MD5) Previous issue date: 2001 Japan Soc Appl Phys.; IEICE Elect Soc.; IEICE Commun Soc.; IEEE Lasers & Electro Opt Soc.; Opt Soc Amer.; Optoelect Ind & Technol Dev Assoc. Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China Japan Soc Appl Phys.; IEICE Elect Soc.; IEICE Commun Soc.; IEEE Lasers & Electro Opt Soc.; Opt Soc Amer.; Optoelect Ind & Technol Dev Assoc. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
| Fonte |
Wei HZ; Yu JZ; Liu ZG; Ma HZ; Li GH; Zhang XF; Wang LC .Integrated tapered MMI couplers in the silicon-on-insulator technology .见：IEEE .CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST,345 E 47TH ST, NEW YORK, NY 10017 USA ,2001,246-247 |
| Palavras-Chave | #光电子学 #DEVICES |
| Tipo |
会议论文 |
