Quantum Well Intermixing of InGaAsP QWs by Impurity Free Vacancy Diffusion Using SiO_2 Encapsulation

Experiment on quantum well intermixing (QWI) of InGaAsP QWs by impurity free vacancy diffusion (IFVD) using SiO_2 encapsulation is reported. A maximum band gap wavelength blue-shift as large as 200nm is realized. Furthermore, an FP laser blue-shifted 21nm by QWI is fabricated with characteristics comparable with the asgrown one.

Light induced rapid thermal diffusion of boron atom in silicon

国家自然科学基金

Influence of open-tube Ga diffusion on the characteristics for thyristor

Open-tube Ga diffusion into a SiO2/Si structure was used for fabrication of the high speed thyristor. The advantages of open-tube Ga diffusion are as follows; it is easier to operate and easier to control the profile of the Ga concentration during processing, a clean surface, which is free from alloy spots can be obtained, this technique ensures to improve the on-state characteristics and dynamic characteristics.

Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)

The annealing behavior of Si implanted with Ge and then BF2 has been characterized by double crystal X-ray diffraction (DCXRD) and secondary ion mass spectroscopy (SIMS). The results show that annealing at 600 degrees C for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. The initial crystallinity of Si is fully recovered after annealing at 950 degrees C for 60 minutes and accompanied by Ge diffusion. Very shallow boron junction depth has been formed. When annealing temperature rises to 1050 degrees C, B diffusion enhances, which leads to a deep diffusion and good distribution of B atoms into the Si substrate. The X-ray diffraction (004) rocking curves from the samples annealed at 1050 degrees C for 60 minutes display two SiGe peaks, which may be related to the B concentration profiles.

The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix

We investigate the annealing behavior of Photoluminescence (PL) from self-assembled InAs quantum dots (QDs) with different thicknesses GaAs cap layers. The diffusion introduced by annealing treatment results in a blue-shift of the QD PL peak, and a decrease in the integrated intensity. The strain present in QDs enhances the diffusion, and the QDs with the cap layers of different thicknesses will experience a strain of different strength. This can lend to a, better understanding of the larger blue-shift of the PL peak of the deeper buried QDs, and the different variance of the full width at half maximum of the luminescence from QDs with the cap layers of different thicknesses.

Effects of convection and solid wall on the diffusion in microscale convection flows

The diffusive transport properties in microscale convection flows are studied by using the direct simulation Monte Carlo method. The effective diffusion coefficient D is computed from the mean square displacements of simulated molecules based on the Einstein diffusion equation D = x2 t /2t. Two typical convection flows, namely, thermal creep convection and Rayleigh– Bénard convection, are investigated. The thermal creep convection in our simulation is in the noncontinuum regime, with the characteristic scale of the vortex varying from 1 to 100 molecular mean free paths. The diffusion is shown to be enhanced only when the vortex scale exceeds a certain critical value, while the diffusion is reduced when the vortex scale is less than the critical value. The reason for phenomenon of diffusion reduction in the noncontinuum regime is that the reduction effect due to solid wall is dominant while the enhancement effect due to convection is negligible. A molecule will lose its memory of macroscopic velocity when it collides with the walls, and thus molecules are hard to diffuse away if they are confined between very close walls. The Rayleigh– Bénard convection in our simulation is in the continuum regime, with the characteristic length of 1000 molecular mean free paths. Under such condition, the effect of solid wall on diffusion is negligible. The diffusion enhancement due to convection is shown to scale as the square root of the Péclet number in the steady convection regime, which is in agreement with previous theoretical and experimental results. In the oscillation convection regime, the diffusion is more strongly enhanced because the molecules can easily advect from one roll to its neighbor due to an oscillation mechanism. © 2010 American Institute of Physics. doi:10.1063/1.3528310

Numerical study on NOx/CO emissions in the diffusion flames of high-temperature off-gas of steelmaking converter

The combustion of high-temperature off-gas of steelmaking converter with periodical change of temperature and CO concentration always leads to CO and NOx over-standard emissions. In the paper, high-temperature off-gas combustion is simulated by adopting counterflow diffusion flame model, and some influencing factors of CO and NOx emissions are investigated by adopting a detailed chemistry GRI 3.0 mechanism. The emission index of NOx (EINOx) decreases 1.7–4.6% when air stoichiometric ratio (SR) increase from 0.6 to 1.4, and it dramatically increases with off-gas temperature at a given SR when the off-gas temperature is above 1500 K. High-concentration CO in off-gas can result in high NOx emissions, and NOx levels increase dramatically with CO concentration when off-gas temperature is above 1700 K. Both SR and off-gas temperature are important for the increase of CO burnout index (BICO) when SR is less than 1.0, but BICO increase about 1% when off-gas temperature increases from 1100 K to 1900 K at SR > 1.0. BICO increases with CO concentration in off-gas, and the influence of off-gas temperature on BICO is marginal. BICO increases with the relative humidity (RH) in air supplied, but it increases about 0.5% when RH is larger than 30%.