Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE

ZnO, as a wide-band gap semiconductor, has recently become a new research focus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy (L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition (PLD). Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond (ns) pulsed laser ablation of ZnO ceramic target, the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.

Photoluminescence and activation on SI-GaAs by Si+ implantation and following rapid thermal annealing

Photoluminescence (PL) and electrical characteristics of SI-GaAs, Si+-implanted and following rapid thermal annealing (RTA), were investigated, The PL spectra of Si-GA-C-As, Ga-i-Si-As, and V-As-Si-As were obtained. This paper concentrates on the PL peak at 1.36 eV which was proven as an emission of the Si-Ga-V-Ga combination by Si+ + P+ dual implantation. The results indicate that the peak at 1.36 eV appears when the ratio of As:Ga increased during the processing. Also high activation was obtained for the sample under the same conditions. More discussion on the mechanism of Si+ implanted SI-GaAs has been made based on the Morrow model [J. Appl. Phys, 64 (1988) 1889].

An introduction to the trapping of clusters with ion traps and electrostatic storage devices

This paper presents an introduction to the application of ion traps and storage devices for cluster physics. Some experiments involving cluster ions in trapping devices such as Penning traps, Paul traps, quadrupole or multipole linear traps are briefly discussed. Electrostatic ion storage rings and traps which allow for the storage of fast ion beams without mass limitation are presented as well. We also report on the recently developed mini-ring, a compact electrostatic ion storage ring for cluster, molecular and biomolecular ion studies.

Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation

Amorphous SiO2 thin films with about 400-500 nm in thickness were thermally grown on single crystalline silicon. These SiO2/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0 x 10(17),5.0 X 10(17) or 1.2 x 10(18) ions/cm(2), then irradiated at RT by 853 MeV Pb ions to 5.0 x 10(11), 1.0 X.10(12) 2.0 x 10(12) or 5.0 x 10(12) ions/cm(2), respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO2 films. For examples, 5.0 x 10(12) Pb-ions/cm(2) irradiation produced huge blue and green light-emitters in 2.0 x 10(17) C-ions/cm(2) implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0 x 10(17) carbon-ions/cm(2) implanted samples, 2.0 x 10(12) Pb-ions/cm(2) irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0 x 10(12) Pb-ionS/cm(2) irradiation could,create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2 x 10(18) carbon-ions/cm(2) implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type Of SiO2-based light-emission materials.

Preparation of Microporous Membranes by Swift Heavy Ion Irradiation and Impedance Characterization

Polypropylene (PP) microporous membranes were successfully prepared by swift heavy ion irradiation and track-etching. Polypropylene foils were irradiated with Au-197 ions of kinetic energy 11.4 MeV.u(-1) (total energy of 2245.8 MeV) and fluence 1x10(8) ions.cm(-2) at normal incidence. The damaged regions produced by the gold ions along the trajectories were etched in H2SO4 and K2Cr2O7 solutions leading to the formation of cylindrical pores in the membranes. The pore diameters of the PP microporous membranes increased from 380 to 1610 nm as the etching time increased from 5 to 30 min. The surface and cross-section morphologies of the porous membranes were characterized by scanning electron microscopy (SEM). The micropores in the membranes were found to be cylindrical in shape, homogeneous in distribution, and equal in size. Some mathematical relations of the porosity of the PP microporous membranes were established by analytic derivation. The microporous membranes were used in lithium-ion batteries to measure their properties as separators. The electrical conductivity of the porous membrane immersed in liquid electrolyte was found to be comparable to that of commercial separators by electrochemical impedance spectroscopy (EIS). The results showed that the porosity and electrical conductivity were dependent on the ion fluence and etching time. By adjusting these two factors, microporous membranes with good porosity and electrical conductivity were made that met the requirements for commercial use.

重离子辐照制备电池用微孔膜及其阻抗性质；Preparation of Microporous Membranes by Swift Heavy Ion Irradiation and Impedance Characterization

利用离子辐照结合径迹蚀刻方法制备聚丙烯(PP)微孔膜.用加速器产生的单核能为11.4MeV·u-1(总能量2245.8MeV)的197Au离子束辐照PP膜,剂量为1×108ions·cm-2.辐照后PP膜沿离子路径产生损伤区域,用硫酸与重铬酸钾的混合液进行蚀刻(5-30min),制备出孔径为380-1610nm的聚丙烯微孔膜.对膜的表面和断面形貌进行表征,微孔膜的孔径大小及空间分布均匀,孔道上下贯通,形状近似为圆柱形.给出了微孔膜的孔隙率理论公式.将制备的聚丙烯微孔膜用作锂离子电池隔膜,用电化学阻抗谱(EIS)测定浸满电解液的微孔膜的离子电导率,并与商用隔膜进行比较.分析表明辐照剂量和孔径大小均会影响膜的孔隙率和离子电导率,选择合适的辐照剂量和蚀刻时间,可以制备出孔隙率和离子电导率符合应用标准的聚丙烯微孔膜.

80keV N离子注入对ZnO薄膜结构的影响；Effects of 80 keV N-ion Implantation on Structures of ZnO Films

室温下用80keVN离子注入ZnO薄膜样品,注量分别为5.01014,5.01015和5.01016ions/cm2,然后用X射线衍射和透射电镜技术对样品的结构特性进行了表征。实验结果表明,由高度(002)择优取向的致密柱状晶构成的薄膜中,注入5.0×1015ions/cm2时,观测到缺陷生成和局域无序化现象,但薄膜总体结构仍保持柱状晶和(002)择优取向;随着注量的增大,晶格常数c和压应力呈增大趋势。对注入N离子对ZnO薄膜结构特性的影响机理进行了简单的讨论。

Study of ion solvation and ion association in polymer gel electrolyte with polyethylene oxide-co-polypropylene oxide as a plasticizer

Using a molal conductance method, ion solvation and ion association in polytriethylene glycol dimethacrylate (PTREGD)-LiClO4 gel electrolytes with amorphous ethylene oxide-co-propylene oxide (EO-co-PO, <(M)over bar (n)>, = 1750) as the plasticizer were investigated. It was found that the fraction of solute existing as single ions (alpha(i)) and ion pairs (alpha(p)) decreases, while that of triple ions (alpha(t)) increases linearly with increasing salt concentration. The dependence of these fractions on molecular weight of plasticizer was also examined. It was shown that alpha(i) and alpha(t) increase and alpha(p) decreases with increasing molecular weight. The result of temperature dependence of these fractions was very interesting: when the temperature is lower than 55 degrees C, alpha(i) increases while alpha(p) and alpha(t) decrease with increasing temperature; however, when the temperature is higher than 55 degrees C, the reverse is true.

An investigation on ion solvation and ion association in a gel-type solid state polymer electrolyte

Ion salvation and ion association in polytriethylene glycol dimethacrylate (PTREGD)-LiClO4 gel-type polymer electrolytes were investigated. It was found that the fraction of solute existing as single ions (alpha(i)) decreases and that of triple ions (alpha(i)) increases linearly with increasing LiClO4 concentration, while for ion pairs, as the salt concentration increases, its fraction (alpha(p)) increases first and then falls down. The findings can be rationalized by the fact that the ionic conductance of the polymer electrolyte may be mainly contributed by triple ions and higher ionic aggregates with unequal numbers of positive and negative charges in the salt concentration range of practical significance, i.e. in the range of 0.5-1.5 mol/l. The temperature dependence of these fractions was also examined. In the case of tetraethylene glycol as the solvent, alpha(i) and alpha(p) increase as the temperature is raised, but alpha(t) decreases as the temperature increases from 25 degrees C to 85 degrees C. It seems that the increase of alpha(i) and alpha(p) results from the redissociation of triple ions at higher temperature, The same changing trend of those fractions is also observed when PEG(400) is used as the solvent.